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    • 9. 发明专利
    • PRODUCTION OF THIN FILM USING ORGANOMETALLIC COMPLEX
    • JPH0885873A
    • 1996-04-02
    • JP24852694
    • 1994-09-16
    • DOWA MINING CO
    • YOSHIZAWA HIDEJITAZAKI YUZO
    • B01J19/00C07F15/00C23C16/18
    • PURPOSE: To easily obtain a uniform metallic thin film having excellent electrical characteristic with good reproducibility at the time of producing the thin film by vapor growth by using a complex of specified Ir and β-diketonic org. compd. as the raw material. CONSTITUTION: A complex of the Ir shown by the formula and a β-diketonic org. compd. is used as the raw material when a thin film is formed by vapor growth. In the formula R and R' are any group among CH3 , CF3 , C2 H5 , C3 H7 , C3 F7 and C(CH3 )3 . For example, when a thin film is produced by hot CVD, 1g of tris-dipivaloylmethanato-Ir is put in a raw material vessel 2 (made of glass and held at a constant temp. of 90 deg.C), then gaseous Ar 4 is introduced into the vessel at 100ml/min, and tris-dipivaloylmethanatoiridium is entrained by the gas and introduced into a thermal decomposition furnace 6. Meanwhile, a silicon substrate 9 placed in the quartz reaction tube 7 of the furnace 6 is heated to 500 deg.C by a heater 8, a pipeline extending from the vessel 2 to the furnace 6 is kept at 120 deg.C by insulation, and the thin film is formed for 30min under such conditions.
    • 10. 发明专利
    • JPH05308000A
    • 1993-11-19
    • JP11135792
    • 1992-04-30
    • DOWA MINING CO
    • ISHIKAWA YUICHIKOJIMA MASAHIROYOSHIZAWA HIDEJI
    • H05H7/14H05H13/04
    • PURPOSE:To dispense with electromagnet and controller to thereby downsize a device as well as attain cost reduction by providing superconductor-made path having a hollow part through which charged particles pass, cooling means, particle incident means, vacuum unit and accelerator means. CONSTITUTION:Charged particles 1 incident by a particle incident means 5 to the inside of a path 3 under a superconductive condition made by a cooling means 4 while a hollow part 2 is maintained in a super high vacuum condition by a vacuum unit 6 magnetizes the path 3 while passing through the hollow part 2, and on the particles 1 repulsive force acts from the circumferential wall to control the moving direction. The particles 1 can have a required speed owning to the acceleration by an acceleration means 7 while uses the central axis of the path as the moving trajectory without any electromagnet for control the moving direction of the particles 1 and its controller of high price. A device can be made compact and reduced in cost if such a charged particle accelerator is applied to an SOR device.