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1. 发明专利

DE102009018266A1 未知
公开(公告)号：DE102009018266A1
公开(公告)日：2009-10-29
申请号：DE102009018266
申请日：2009-04-21
申请人： DENSO CORP
发明人： SUZUKI SHIGENORI , YOKURA HISANORI , YOKOYAMA KENICHI , FUJII TETSUO , SUGIURA KAZUHIKO
IPC分类号： B81B7/02 , B81B3/00 , B81C1/00 , G01C19/56 , G01C19/5769 , G01L1/14 , G01P15/125 , H01L29/84

2. 发明专利

DE102009018266B4 Sensor zur Erfassung einer physikalischen Grösse und Verfahren zu dessen Fertigung 未知
公开(公告)号：DE102009018266B4
公开(公告)日：2020-12-17
申请号：DE102009018266
申请日：2009-04-21
申请人： DENSO CORP
发明人： SUZUKI SHIGENORI , YOKURA HISANORI , YOKOYAMA KENICHI , FUJII TETSUO , SUGIURA KAZUHIKO
IPC分类号： B81B7/02 , B81B3/00 , B81C1/00 , G01C19/56 , G01C19/5769 , G01L1/14 , G01P15/125 , H01L29/84
摘要： Sensor zur Erfassung einer physikalischen Größe, mit:- einem Sensorsubstrat (21, 31, 41, 71, 81, 101), das ein erstes Tragesubstrat (9), einen ersten Isolierfilm (10) und eine erste Halbleiterschicht (11, 11 a) aufweist, die in dieser Reihenfolge geschichtet sind, wobei das erste Tragesubstrat (9) mit p-leitenden Störstellen dotiert ist, der erste Isolierfilm (10) aus einem Oxidfilm aufgebaut ist, der mit einem Fremdstoff dotiert ist, der als p-leitend definiert ist, und die erste Halbleiterschicht (11, 11a) mit p-leitenden Störstellen dotiert ist;- einem Kappensubstrat (22, 32, 42, 52, 62, 72, 82, 102), das ein zweites Tragesubstrat (22a) aufweist, das auf der ersten Halbleiterschicht (11, 11a) angeordnet und mit p-leitenden Störstellen dotiert ist; und- mehreren Elektroden (3d, 4b), die getrennt voneinander angeordnet sind, wobei- die physikalische Größe auf der Grundlage einer Kapazität zwischen den mehreren Elektroden (3d, 4b) erfasst wird,- die mehreren Elektroden (3d, 4b) in der ersten Halbleiterschicht (11, 11a) angeordnet sind, und- der erste Isolierfilm (10) unter einer der mehreren Elektroden (3d, 4b) zumindest teilweise entfernt ist.

3. 发明专利

JP2009267098A Semiconductor apparatus and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：JP2009267098A
公开(公告)日：2009-11-12
申请号：JP2008115249
申请日：2008-04-25
申请人： Denso Corp , 株式会社デンソー
发明人： SUZUKI SHIGENORI
IPC分类号： H01L21/3205 , G01P15/08 , H01L23/52 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L29/84
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor apparatus and a method of manufacturing the same for forming a fine penetrating wiring in a penetrating part having a high aspect ratio using a dry process.
SOLUTION: When a probe for supplying a current is contacted to a wiring 13 to flow a large current in a direction of a penetrating part 11e, electromigration which causes a metallic element of the wiring 13 to move in the direction of current arises. Since a region except an opening of the penetrating part 11e of the wiring 13 is put under restraint by a substrate surface 11d of an SOI substrate 11, the metallic element is collected to the opening of the penetrating part 11e that is not put under restraint. The collected metallic element is arranged in a fine-line shape by self-organization, and a metallic fine line 14 is grown toward an electrode 23 in the penetrating part 11e to connect the wiring 13 and the electrode 23.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得半导体装置及其制造方法，用于使用干法在具有高纵横比的穿透部分中形成细的穿透布线。解决方案：当用于提供电流的探针接触布线13以沿着穿透部分11e的方向流动大电流时，导致布线13的金属元件沿电流方向移动的电迁移。由于布线13的贯通部11e的开口以外的区域受到SOI基板11的基板面11d的约束，所以金属元件被收集到不受限制的贯通部11e的开口部。所收集的金属元件通过自组织布置成细线状，并且在穿透部分11e中朝向电极23生长金属细线14以连接布线13和电极23.版权所有（ C）2010，JPO＆INPIT

4. 发明专利

JP2010139495A Semiconductor device and method for producing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010139495A
公开(公告)日：2010-06-24
申请号：JP2009050471
申请日：2009-03-04
申请人： Denso Corp , 株式会社デンソー
发明人： SUZUKI SHIGENORI , YOKOYAMA KENICHI
IPC分类号： G01P15/125 , G01L9/00 , G01P15/08 , H01L23/04 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing reduction of accuracy of characteristics of the semiconductor device caused by a stress applied to a joining surface between a semiconductor substrate and a cap member, and a method for producing the same. SOLUTION: The semiconductor device is constituted so as to include at least one of the recesses 17, 46-48 among a recess 17 formed in a region joined with a cap member 40 in the semiconductor substrate 10, recesses 46, 47 formed in a region joined to the semiconductor substrate 10 in the cap member 40 or a recess 48 formed in a region on the opposite side to the region joined to the semiconductor substrate 10 in the cap member 40. In the semiconductor device, the recesses 17, 46-48 can expand and contract and reduce stress. Thus, the semiconductor device can suppress reduction of accuracy of characteristics. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制由施加到半导体基板和盖部件之间的接合面的应力引起的半导体器件的特性精度降低的半导体器件及其制造方法。解决方案：半导体器件被构造成在形成在与半导体衬底10中的帽构件40连接的区域中的凹部17中的至少一个凹部17,46-48中，形成有凹部46,47 在连接到帽构件40中的半导体衬底10的区域中，或者形成在与帽构件40中连接到半导体衬底10的区域的相对侧的区域中的凹部48中。在半导体器件中， 46-48可以扩大和收缩并减轻压力。因此，半导体装置可以抑制特性精度的降低。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009111146A Semiconductor chip and manufacturing method thereof 审中-公开
标题翻译：半导体芯片及其制造方法
公开(公告)号：JP2009111146A
公开(公告)日：2009-05-21
申请号：JP2007281720
申请日：2007-10-30
申请人： Denso Corp , 株式会社デンソー
发明人： SUZUKI SHIGENORI , YOKURA HISANORI
IPC分类号： H01L21/301 , B23K26/00 , B23K26/38 , B23K26/40 , B23K101/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor chip manufactured by a method including a fracturing process through a dicing process using laser beam, along with its manufacturing method, wherein minute pieces in a reform region are prevented from being peeled from a fracture surface of the semiconductor chip. SOLUTION: In a compound formation process after a wafer 21 is fractured, a semiconductor substrate 21 fractured into semiconductor chips 22 is arranged in a chamber for compound formation while pasted to a sheet 41. Then, the atmosphere is introduced into the chamber, and a fracture surface 21d is irradiated with ultraviolet ray from above a wafer 20 using a low pressure mercury lamp. Thus, the fracture surface 21d is oxidized with the oxygen excited by the ultraviolet ray to form an oxide 21e of silicon. Since chemical bonding strength between the fracture surface 21d and a reform region K is enhanced by the oxide 21e, the reform region K is prevented from splashing minute pieces. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过包括通过使用激光束的切割工艺的压裂工艺的方法制造的半导体芯片及其制造方法，其中防止改性区域中的碎片从断裂中剥离半导体芯片的表面。解决方案：在晶片21断裂之后的化合物形成过程中，将半导体芯片22断裂的半导体衬底21布置在用于化合物形成的腔室中，同时粘贴到片材41.然后将气体引入腔室使用低压水银灯从晶片20上方照射紫外线的断面21d。因此，断裂面21d被用紫外线激发的氧氧化，形成硅的氧化物21e。由于通过氧化物21e增强了断裂面21d与改质区域K之间的化学键合强度，因此可以防止改质区域K溅出微小碎片。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009283900A Method for manufacturing mechanical quantity sensor, and mechanical quantity sensor 有权
标题翻译：制造机械量传感器的方法和机械量传感器
公开(公告)号：JP2009283900A
公开(公告)日：2009-12-03
申请号：JP2009011903
申请日：2009-01-22
申请人： Denso Corp , 株式会社デンソー
发明人： SUZUKI SHIGENORI , YOKURA HISANORI , YOKOYAMA KENICHI , FUJII TETSUO , SUGIURA KAZUHIKO
IPC分类号： H01L29/84 , G01C19/56 , G01P9/04 , G01P15/125
CPC分类号： B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81C2203/0118 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： PROBLEM TO BE SOLVED: To improve mechanical reliability by reducing the stress concentration at the interface between a semiconductor layer and an insulation film. SOLUTION: Regarding a silicon layer 11 formed via an oxide film 10 in which a p-type impurity is doped on an upper surface of a support substrate 9, the silicon layer 11 is processed into a plurality of parts by performing division processing of a movable electrode 3d to be a first electrode part with the first width W1, a fixed electrode 4b, and the silicon layer 11 (a part of a movable unit 3) to be a second electrode part with second width W2 wider than the first width W1 by, for example, isotropic etching processing until the upper surface of the oxide film 10 is exposed. Next, the exposed oxide film 10 is removed while making a support portion 10b near the center under the silicon layer 11 remain, and an oxide film 10 on the side of the support portion 10b is removed by, for example, isotropic etching. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过降低半导体层和绝缘膜之间的界面处的应力集中来提高机械可靠性。解决方案：关于通过在支撑基板9的上表面上掺杂有p型杂质的氧化物膜10形成的硅层11，通过进行分割处理将硅层11加工成多个部分作为具有第一宽度W1的第一电极部分的可动电极3d，固定电极4b和作为第二宽度W2比第一宽度W2宽的第二电极部分的硅层11（可移动单元3的一部分）宽度W1通过例如各向同性蚀刻处理直到暴露氧化膜10的上表面。接下来，在残留有硅层11的中心附近使支撑部10b保持的状态下除去露出的氧化膜10，并且通过例如各向同性蚀刻除去在支撑部10b一侧的氧化物膜10。版权所有（C）2010，JPO＆INPIT

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