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1. 发明申请

WO2004005985A1 A SUPERLUMINESCENT DIODE 审中-公开
标题翻译：超级亮度二极管
公开(公告)号：WO2004005985A1
公开(公告)日：2004-01-15
申请号：PCT/GB2003/002912
申请日：2003-07-07
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , ONG, Teik, Kooi , TAN, Peh, Wei
发明人： ONG, Teik, Kooi , TAN, Peh, Wei
IPC分类号： G02B6/12
CPC分类号： H01L33/0045 , G02B6/1228
摘要： There is provided a superluminescent diode (SLD) comprising a planar optical waveguide (41) having two trenches (42) which extend from a facet (45) of the planar optical waveguide, the two trenches defining a ridge therebetween in the planar optical waveguide. At least one trench has at least a region (43) which is tapered, in which the width of the trench decreases with distance from the facet measured along the length of the trench. The tapering trench or trenches provide for light that is propagating away from the facet and guided by the ridge to be gradually evanescently coupled out to a surrounding broad area waveguide, thus reducing the amount of light that may reach a further facet and be reflected back into the guided mode.
摘要翻译：提供了一种超发光二极管（SLD），其包括具有从平面光波导的小面（45）延伸的两个沟槽（42）的平面光波导（41），两个沟槽在平面光波导中限定了一个脊。至少一个沟槽具有至少一个渐缩的区域（43），其中沟槽的宽度随着沿着沟槽的长度测量的与面的距离而减小。渐缩的沟槽或沟槽提供了远离小平面传播并由脊引导的光，以逐渐渐逝地耦合到周围的广域波导，从而减少可能到达另一小面并被反射回的光量引导模式。

2. 发明申请

WO2003032453A2 TWO-SECTION DISTRIBUTED BRAGG REFLECTOR LASER 审中-公开
标题翻译：两部分分布式反射镜激光器
公开(公告)号：WO2003032453A2
公开(公告)日：2003-04-17
申请号：PCT/GB2002/004544
申请日：2002-10-07
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi , LIM, Hwi, Siong , CHOO, Lay, Cheng , TAN, Peh, Wei
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/065 , H01S5/0654 , H01S5/0683 , H01S5/0687 , H01S5/125 , H01S5/3413
摘要： There is provided a semiconductor laser comprising a gain section and an adjacent Bragg section, wherein output laser light is emitted via a facet at an interface between air and the gain section, the Bragg section comprising a distributed reflecting structure having a length substantially greater than required to ensure single longitudinal mode operation of the laser in which the side-mode suppression ratio (SMSR) is 35 dB or more, thereby in use substantially suppressing optical feedback from a facet at an interface between the Bragg section and air, and wherein an interface between the Bragg section and the gain is quantum well intermixed, thereby rendering the interface substantially anti-reflecting at the wavelength of the laser.
摘要翻译：提供了一种包括增益部分（10）和相邻布拉格部分（11）的半导体激光器，其中输出激光经由空气与增益部分（17）之间的界面处的刻面发射，布拉格部分包括分布反射结构（12）的长度显着大于确保侧模抑制比（SMSR）为35dB或更大的激光器的单纵模运行所需的长度，从而在使用上基本上抑制了从小平面（18）的光学反馈）布拉格部分和空气之间的界面处，并且其中布拉格部分和增益之间的界面是量子阱良好的混合，从而使界面在激光的波长处基本上防反射。

3. 发明申请

WO2003041121A3 A CURRENT BLOCKING STRUCTURE TO IMPROVE SEMICONDUCTOR LASER PERFORMANCE 审中-公开
公开(公告)号：WO2003041121A3
公开(公告)日：2003-05-15
申请号：PCT/GB2002/004994
申请日：2002-11-06
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi
IPC分类号： H01S5/227
摘要： The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe 3+ /Fe 2+ ) near mid-band gap.The iron impurities are deep level traps, and will make the capacitance C 2 less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1 x 10 18 CM -3 to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C 2 and hence the overall capacitance C p-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.

4. 发明申请

WO2003041121A2 A CURRENT BLOCKING STRUCTURE TO IMPROVE SEMICONDUCTOR LASER PERFORMANCE 审中-公开
标题翻译：提高半导体激光器性能的电流阻塞结构
公开(公告)号：WO2003041121A2
公开(公告)日：2003-05-15
申请号：PCT/GB2002/004994
申请日：2002-11-06
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi
IPC分类号： H01L
CPC分类号： H01S5/227 , H01S5/06226 , H01S5/2222 , H01S5/2226 , H01S5/2277
摘要： The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe 3+ /Fe 2+ ) near mid-band gap.The iron impurities are deep level traps, and will make the capacitance C 2 less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1 x 10 18 CM -3 to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C 2 and hence the overall capacitance C p-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.
摘要翻译： DC-PBH激光二极管的层结构由n-InP衬底（51），n-InP缓冲层（52），未掺杂的InGaAsP有源层（53），p-Inp覆层（54），p-InP电流阻挡层（55），n-InP电流阻挡层（56），p-InP包覆层（57）和p-InGaAsP接触层（58）。附加的Fe掺杂InP层（55a）在中间带隙附近产生受主电平（Fe 3+ / Fe 2+）。铁杂质是深层陷阱，并且将使电容C2更小依赖于通常掺杂浓度大于1×10 18 CM 3的层（56）的杂质浓度以降低从p-InP阻挡层（57）到p-InP阻挡层的漏电流（55）对发光没有贡献。由于Fe掺杂的InP层（55a），电容C2和整体电容Cp-n-p-n将被降低，因此在高速运行期间通过电流阻挡结构的位移电流将降低。此外，由于该Fe掺杂InP层也是热稳定的半绝缘材料，因此在n-InP阻挡层（56）和P-InP阻挡层（55）之间形成高电阻率层。因此，如上所述，该Fe掺杂InP层（55a）还将有效地减少流过p-n-p-n电流阻塞通道的漏电流。

5. 发明公开

EP1436871A2 TWO-SECTION DISTRIBUTED BRAGG REFLECTOR LASER 审中-公开
标题翻译：具有分布式布拉格反射器两个断面LASER
公开(公告)号：EP1436871A2
公开(公告)日：2004-07-14
申请号：EP02800661.7
申请日：2002-10-07
申请人： Denselight Semiconductors Pte Ltd.
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi , LIM, Hwi, Siong , CHOO, Lay, Cheng , TAN, Peh, Wei
IPC分类号： H01S5/125
CPC分类号： B82Y20/00 , H01S5/06256 , H01S5/065 , H01S5/0654 , H01S5/0683 , H01S5/0687 , H01S5/125 , H01S5/3413
摘要： There is provided a semiconductor laser comprising a gain section (10) and an adjacent Bragg section (11), wherein output laser light is emitted via a facet at an interface between air and the gain section (17), the Bragg section comprising a distributed reflecting structure (12) having a length substantially greater than required to ensure single longitudinal mode operation of the laser in which the side-mode suppression ratio (SMSR) is 35 dB or more, thereby in use substantially suppressing optical feedback from a facet (18) at an interface between the Bragg section and air, and wherein an interface between the Bragg section and the gain is quantum well intermixed, thereby rendering the interface substantially anti-reflecting at the wavelength of the laser.

6. 发明公开

EP1444759A2 A CURRENT BLOCKING STRUCTURE TO IMPROVE SEMICONDUCTOR LASER PERFORMANCE 审中-公开
标题翻译：电流势垒结构，以提高半导体激光器特性
公开(公告)号：EP1444759A2
公开(公告)日：2004-08-11
申请号：EP02772611.6
申请日：2002-11-06
申请人： Denselight Semiconductors Pte Ltd.
发明人： LAM, Yee, Loy , CHAN, Yuen, Chuen , ONG, Teik, Kooi
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/06226 , H01S5/2222 , H01S5/2226 , H01S5/2277
摘要： The layer structure of a DC-PBH laser diode consists of an n-InP substrate (51), an n-InP buffer layer (52), an undoped-InGaAsP active layer (53), a p-Inp cladding layer (54), a p-InP current blocking layer (55), an n-InP current blocking layer (56), a p-InP cladding layer (57), and a p-InGaAsP contact layer (58). An additional layer of Fe-doped InP layer (55a) creates an acceptor level (Fe3+/Fe2+) near mid-band gap.The iron impurities are deep level traps, and will make the capacitance C¿2? less dependent of the impurity concentration of layer (56) which is normally doped with a concentration larger than 1 x 10?18 CM-3¿ to lower the leakage current from p-InP blocking layer (57) to p-InP blocking layer (55) that does not contribute to light emission. The capacitance C¿2? and hence the overall capacitance Cp-n-p-n will be reduced with this Fe doped InP layer (55a) and consequently the displacement current through the current blocking structure during high speed operation will be lowered. In addition, as this Fe-doped InP layer is also a thermally stable semi-insulating material, a high resistivity layer is thus formed between the n-InP blocking layer (56) and P-InP blocking layer (55). Thus, this Fe doped InP layer (55a) will also effectively reduce the leakage current flowing through the p-n-p-n current blocking channel as mentioned above.

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