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1. 发明申请

WO2003062910A1 ELECTROABSORPTION MODULATOR WITH TWO SECTIONS 审中-公开
标题翻译：具有两个部分的电子调制器
公开(公告)号：WO2003062910A1
公开(公告)日：2003-07-31
申请号：PCT/GB2003/000116
申请日：2003-01-15
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John , LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chuen
发明人： LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chuen
IPC分类号： G02F1/017
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2201/127 , G02F2201/16 , G02F2203/25
摘要： The invention relates to an electroabsorption modulator (EAM) (300), comprising a first EAM section (302) optically coupled to a second EAM section (304), a transition wavelength in the electroabsorption (EA) spectrum of the first EAM section (302), at which absorption changes substantially, being different to a transition wavelength in the EA spectrum of the second EAM section (304). The EAM (300) compensates for chirp (which is caused by intrinsic absorption effects) by driving the two sections with a signal (312) generated from a common modulating signal (314). The driving signal (312) at the first EAM section (302) being preferably in anti-phase with the driving signal (312) at the second EAM section (304).
摘要翻译：本发明涉及电吸收调制器（EAM）（300），其包括光耦合到第二EAM部分（304）的第一EAM部分（302），第一EAM部分（302）的电吸收（EA）光谱中的跃迁波长），其吸收基本变化，不同于第二EAM部分（304）的EA光谱中的跃迁波长。 EAM（300）通过用从公共调制信号（314）产生的信号（312）驱动两个部分来补偿啁啾（其由本征吸收效应引起的）。第一EAM部分（302）处的驱动信号（312）优选地与第二EAM部分（304）处的驱动信号（312）反相。

2. 发明申请

WO2003079507A3 DIRECTLY MODULATED LASER DIODE WITH CHIRP CONTROL 审中-公开
公开(公告)号：WO2003079507A3
公开(公告)日：2003-09-25
申请号：PCT/GB2003/001185
申请日：2003-03-17
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John , NAKAMURA, Hiroshi , LAM, Yee, Loy , CHAN, Yuen, Chuen
发明人： NAKAMURA, Hiroshi , LAM, Yee, Loy , CHAN, Yuen, Chuen
IPC分类号： H01S5/0625
摘要： A semiconductor laser with high-speed direct modulation comprises a gain region (A) in which optical radiation is amplified, a phase region (B), having a higher energy band gap than the gain region and thereby substantially transparent to the optical radiation, means for applying an RF modulation signal to the gain region, and means for applying an RF modulation signal to the phase region, wherein the signal applied to the phase region causes a phase modulation which compensates for wavelength variations in the optical radiation caused by the direct modulation of the gain region.

3. 发明申请

WO2003079507A2 DIRECTLY MODULATED LASER DIODE WITH CHIRP CONTROL 审中-公开
标题翻译：直接调节激光二极管与CHIRP控制
公开(公告)号：WO2003079507A2
公开(公告)日：2003-09-25
申请号：PCT/GB2003/001185
申请日：2003-03-17
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John , NAKAMURA, Hiroshi , LAM, Yee, Loy , CHAN, Yuen, Chuen
发明人： NAKAMURA, Hiroshi , LAM, Yee, Loy , CHAN, Yuen, Chuen
IPC分类号： H01S5/0625
CPC分类号： H01S5/06256 , H01S5/06251
摘要： A semiconductor laser with high-speed direct modulation comprises a gain region in which optical radiation is amplified, a phase region, having a higher energy band gap than the gain region and thereby substantially transparent to the optical radiation, means for applying an RF modulation signal to the gain region, and means for applying an RF modulation signal to the phase region, wherein the signal applied to the phase region causes a phase modulation which compensates for wavelength variations in the optical radiation caused by the direct modulation of the gain region.
摘要翻译：具有高速直接调制的半导体激光器包括其中放射光辐射的增益区域，具有比增益区域更高的能带隙并因此对光辐射基本上透明的相位区域，用于施加RF调制信号的装置以及用于将RF调制信号施加到相位区域的装置，其中施加到相位区域的信号引起相位调制，其补偿由增益区域的直接调制引起的光辐射中的波长变化。

4. 发明申请

WO2005012971A1 QUANTUM WELL INTERMIXING FOR IMPROVED ISOLATION IN PHOTONIC DEVICES 审中-公开
标题翻译：用于改善光电器件隔离的量子阱
公开(公告)号：WO2005012971A1
公开(公告)日：2005-02-10
申请号：PCT/GB2004/003309
申请日：2004-07-30
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John , CHAN, Yuen, Chuen , NAKAMURA, Hiroshi
发明人： CHAN, Yuen, Chuen , NAKAMURA, Hiroshi
IPC分类号： G02B6/42
CPC分类号： G02B6/125 , G02B6/12007 , G02B6/124 , G02B2006/12128
摘要： A photonic device (40) with improved optical isolation and a method to fabricate it. The device is grown on a substrate with a quantum well layer so as to be intentionally absorbing at a particular wavelength. Regions (41, 42, 44) of the device that are to be partially or wholly transparent to light at the particular wavelength, or capable of emission at the particular wavelength, are then bandgap engineered by post-growth quantum well intermixing to render them so. The non-QW intermixed regions (43) remain absorbing and so provide the required isolation at the particular wavelength. The QW intermixing may be tailored to provide a particular behaviour at other predetermined wavelengths.
摘要翻译：具有改进的光隔离的光子器件（40）及其制造方法。该器件在具有量子阱层的衬底上生长，以便在特定波长下有意吸收。然后通过后生长量子阱混合对具有特定波长的光或能够在特定波长发射的部分或完全透明的器件的区域（41,42,44）进行带隙工程化，以使其成为。非QW混合区域（43）保持吸收，因此在特定波长处提供所需的隔离。可以调整QW混合以在其它预定波长处提供特定的行为。

5. 发明申请

WO2005013517A2 OPTICAL TRANSCEIVER 审中-公开
标题翻译：光学收发器
公开(公告)号：WO2005013517A2
公开(公告)日：2005-02-10
申请号：PCT/GB2004/003333
申请日：2004-07-30
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John , KOJIMA, Keisuke , NAKAMURA, Hiroshi
发明人： KOJIMA, Keisuke , NAKAMURA, Hiroshi
IPC分类号： H04B10/12
CPC分类号： H04B10/40 , G02B6/4246 , H01L2224/48091 , H01L2924/3011 , H01L2924/3025 , H04B10/25 , H01L2924/00014 , H01L2924/00
摘要： A optical transceiver that employs matched pairs of photonic components, including laser diodes, photodiodes and filters, and differential electrical compensation with common mode rejection to achieve a high effective level of optical and electrical isolation between signals at the transmitter waveband and signals at the receiver waveband. A novel configuration of WDM filter also improves isolation and both techniques are extended to the triplexer transceiver. Innovative arrangement of the components and contacts permits the realization of a very compact packaged transceiver unit.
摘要翻译：采用匹配的光子组件对，包括激光二极管，光电二极管和滤波器以及具有共模抑制的差分电补偿的光收发器，以实现发射机波段的信号与接收机波段的信号之间的高有效水平的光电隔离和电隔离。 WDM滤波器的新颖配置也提高了隔离度，并将这两种技术扩展到三工器收发器。组件和触点的创新布置允许实现非常紧凑的封装收发器单元。

6. 发明申请

WO2003048853A3 A TRAVELLING-WAVE ELECTROABSORPTION MODULATOR 审中-公开
公开(公告)号：WO2003048853A3
公开(公告)日：2003-06-12
申请号：PCT/GB2002/005437
申请日：2002-12-02
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chen
IPC分类号： G02F1/225
摘要： According to the present invention, a travelling-wave electroabsorption modulator (TW-EAM) comprises: an optical waveguide (10) with a plurality of adjacent regions electrically isolated from each other, the regions being characterized alternately by the properties of electroabsorption (EA) (13) and optical transparency (12) over the same range of optical wavelengths, and a microwave transmission line (15) located above the optical waveguide, such that sections of the transmission line located above EA regions in the optical waveguide are in electrical contact with said EA regions, whereas sections of the transmission line located above transparent regions in the optical waveguide are electrically isolated (18) from said transparent regions. In the absence of a microwave signal, the EA (13) regions are substantially transparent to light in the optical waveguide. When a microwave signal is applied to the EA regions, they become substantially absorbing at the wavelength of the light in the optical waveguide. Thus, by applying a fast time-varying microwave signal to the transmission line, the absorption of light in the waveguide can be modulated temporally, thereby encoding information onto the light beam.

7. 发明申请

WO2003041171A2 FABRICATION OF HETEROJUNCTION BIPOLAR TRANSISTOR WITH INTEGRATED MIM CAPACITOR 审中-公开
标题翻译：具有集成MIM电容器的异相双极晶体管的制造
公开(公告)号：WO2003041171A2
公开(公告)日：2003-05-15
申请号：PCT/GB2002/005024
申请日：2002-11-06
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： NAKAMURA, Hiroshi , ANG, Ting, Cheong , ANG, Kian, Siong , HALDER, Subrata , NG, Geok
IPC分类号： H01L27/06
CPC分类号： H01L27/0605 , H01L21/8252
摘要： In the present invention, a semiconductor device is formed which includes an MIM capacitor located on the upper surface of a heterostructure from which the emitter, base and collector sections of a nearby HBT are defined. In this way the capacitor and HBT share a substantially common structure, with the base and emitter electrodes of the HBT fashioned from the same metal layers as the upper and lower capacitor plates, respectively. Furthermore, as the insulator region of the capacitor is formed prior to definition of the HBT structure, the dielectric material used can be deposited by means of a plasma enhanced process, without damaging the HBT structure.
摘要翻译：在本发明中，形成半导体器件，其包括位于异质结构的上表面上的MIM电容器，从其定义附近HBT的发射极，基极和集电极部分。以这种方式，电容器和HBT分别具有基本上共同的结构，HBT的基极和发射极电极分别由与上，下电容器板相同的金属层制成。此外，由于在定义HBT结构之前形成电容器的绝缘体区域，所以使用的电介质材料可以通过等离子体增强工艺沉积，而不会损坏HBT结构。

8. 发明申请

WO2003065100A1 PACKAGE CASING FOR FIBRE-COUPLED OPTOELECTRONIC DEVICE 审中-公开
标题翻译：光纤耦合光电器件封装
公开(公告)号：WO2003065100A1
公开(公告)日：2003-08-07
申请号：PCT/GB2002/005807
申请日：2002-12-19
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD. , FINNIE, Peter, John
发明人： FINNIE, Peter, John , LAM, Yee, Loy , TAM, Siu, Chung , TEO, Kian Hin, Victor , NAKAMURA, Hiroshi
IPC分类号： G02B6/42
CPC分类号： G02B6/4248 , G02B6/424 , G02B6/4271
摘要： There is provided a casing (20) for packaging a preassembled optical fibre-coupled optoelectronic device assembly (11). The casing (20) comprises a can (12) having an integrated snout pipe section (13) and an opening extending from the top wall of the can to the snout pipe section (13) for receiving an optical fibre such that the optical fibre (15) can be fitted through the opening (22) into the snout pipe section (13) and so pass through the snout pipe section (13) to the exterior of the casing (20) with the optoelectronic device (11) housed within the can (12). The opening (22) may be sealed with a removable wall section. Alternatively, when the opening (22) is sufficiently narrow, the opening (22) can be filled with solder alone.
摘要翻译：提供了一种用于包装预组装的光纤耦合光电子器件组件（11）的壳体（20）。壳体（20）包括具有集成的喷嘴管部分（13）的罐（12）和从罐的顶壁延伸到喷嘴管部分（13）的开口，用于接收光纤，使得光纤 15）可以通过开口（22）安装到鼻管部分（13）中，并且通过鼻管部分（13）穿过壳体（20）的外部，光电装置（11）容纳在罐内（12）。开口（22）可以用可移除的壁部分密封。或者，当开口（22）足够窄时，开口（22）可以单独填充焊料。

9. 发明申请

WO2003048853A2 A TRAVELLING-WAVE ELECTROABSORPTION MODULATOR 审中-公开
标题翻译：旅行波电子调制器
公开(公告)号：WO2003048853A2
公开(公告)日：2003-06-12
申请号：PCT/GB2002/005437
申请日：2002-12-02
申请人： DENSELIGHT SEMICONDUCTORS PTE LTD , FINNIE, Peter, John
发明人： LAM, Yee, Loy , NAKAMURA, Hiroshi , CHAN, Yuen, Chen
IPC分类号： G02F1/225
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2001/0175 , G02F2201/127
摘要： According to the present invention, a travelling-wave electroabsorption modulator (TW-EAM) comprises: an optical waveguide with a plurality of adjacent regions electrically isolated from each other, the regions being characterized alternately by the properties of electroabsorption (EA) and optical transparency over the same range of optical wavelengths, and a microwave transmission line located above the optical waveguide, such that sections of the transmission line located above EA regions in the optical waveguide are in electrical contact with said EA regions, whereas sections of the transmission line located above transparent regions in the optical waveguide are electrically isolated from said transparent regions. In the absence of a microwave signal, the EA regions are substantially transparent to light in the optical waveguide. When a microwave signal is applied to the EA regions, they become substantially absorbing at the wavelength of the light in the optical waveguide. Thus, by applying a fast time-varying microwave signal to the transmission line, the absorption of light in the waveguide can be modulated temporally, thereby encoding information onto the light beam.
摘要翻译：根据本发明，行波电吸收调制器（TW-EAM）包括：具有彼此电隔离的多个相邻区域的光波导，该区域由电吸收（EA）和光学透明性在相同的光波长范围内，以及位于光波导上方的微波传输线，使得位于光波导中的EA区之上的传输线的部分与所述EA区电接触，而传输线的部分位于光波导中的上述透明区域与所述透明区域电隔离。在没有微波信号的情况下，EA区域对光波导中的光基本上是透明的。当微波信号施加到EA区域时，它们在光波导中的光的波长处变得基本上被吸收。因此，通过对传输线应用快速时变微波信号，可以暂时调制波导中的光的吸收，从而将信息编码到光束上。

10. 发明公开

EP1444735A2 HETEROJUNCTION BIPOLAR TRANSISTOR WITH INTEGRATED MIM CAPACITOR 审中-公开
标题翻译：具有集成MIM电容器异质结双极型晶体管
公开(公告)号：EP1444735A2
公开(公告)日：2004-08-11
申请号：EP02772625.6
申请日：2002-11-06
申请人： Denselight Semiconductors Pte Ltd.
发明人： NAKAMURA, Hiroshi , ANG, Ting, Cheong , ANG, Kian, Siong , HALDER, Subrata , NG, Geok
IPC分类号： H01L27/06 , H01L21/8252
CPC分类号： H01L27/0605 , H01L21/8252
摘要： In the present invention, a semiconductor device is formed which includes an MIM capacitor located on the upper surface of a heterostructure from which the emitter, base and collector sections of a nearby HBT are defined. In this way the capacitor and HBT share a substantially common structure, with the base and emitter electrodes of the HBT fashioned from the same metal layers as the upper and lower capacitor plates, respectively. Furthermore, as the insulator region of the capacitor is formed prior to definition of the HBT structure, the dielectric material used can be deposited by means of a plasma enhanced process, without damaging the HBT structure.

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