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1. 发明申请

US20120270384A1 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：US20120270384A1
公开(公告)日：2012-10-25
申请号：US13192101
申请日：2011-07-27
申请人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
发明人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
IPC分类号： H01L21/20 , C23C16/455 , C23C16/46
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

2. 发明申请

US20110100554A1 PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：外源化学气相沉积并联体系
公开(公告)号：US20110100554A1
公开(公告)日：2011-05-05
申请号：US12876563
申请日：2010-09-07
申请人： DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , HERMAN P. DINIZ
发明人： DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , HERMAN P. DINIZ
IPC分类号： H01L21/465
CPC分类号： C23C16/44 , C30B25/08 , C30B25/14
摘要： Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.
摘要翻译：本文公开了用于外延沉积的并联系统的实施例。在一些实施例中，用于外延沉积的并联系统包括具有第一处理室和设置在第一主体内的第二处理室的第一主体; 耦合到所述第一和第二处理室中的每一个的共用气体注入系统; 以及联接到所述第一和第二处理室中的每一个的共用排气系统，所述排气系统独立地控制来自每个室的排气压力。在一些实施例中，气体注入系统提供进入每个室的气体的流速的独立控制。

3. 发明申请

US20120266984A1 CHEMICAL DELIVERY SYSTEM 有权
标题翻译：化学输送系统
公开(公告)号：US20120266984A1
公开(公告)日：2012-10-25
申请号：US13441371
申请日：2012-04-06
申请人： MARCEL E. JOSEPHSON , DAVID K. CARLSON , STEVE JUMPER , ERROL ANTONIO C. SANCHEZ
发明人： MARCEL E. JOSEPHSON , DAVID K. CARLSON , STEVE JUMPER , ERROL ANTONIO C. SANCHEZ
IPC分类号： G05D7/00
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

4. 发明申请

US20120266819A1 SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：半导体基板处理系统
公开(公告)号：US20120266819A1
公开(公告)日：2012-10-25
申请号：US13441382
申请日：2012-04-06
申请人： ERROL ANTONIO C. SANCHEZ , DAVID K. CARLSON , SATHEESH KUPPURAO
发明人： ERROL ANTONIO C. SANCHEZ , DAVID K. CARLSON , SATHEESH KUPPURAO
IPC分类号： C23C16/455 , C23C16/56
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：提供了用于处理衬底的设备。在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件，所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从处理室。

5. 发明申请

US20110306186A1 METHODS FOR LOW TEMPERATURE CONDITIONING OF PROCESS CHAMBERS 有权
标题翻译：方法用于低温过程调节的方法
公开(公告)号：US20110306186A1
公开(公告)日：2011-12-15
申请号：US13156082
申请日：2011-06-08
申请人： YI-CHIAU HUANG , DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , ZHIYUAN YE
发明人： YI-CHIAU HUANG , DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , ZHIYUAN YE
IPC分类号： H01L21/20 , B08B9/08
CPC分类号： H01L21/67115 , H01L21/68742
摘要： Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
摘要翻译：本文提供了从处理室内表面除去残留物的方法。在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。

6. 发明申请

US20120077335A1 METHODS FOR DEPOSITING GERMANIUM-CONTAINING LAYERS 有权
标题翻译：沉积包含锗的层的方法
公开(公告)号：US20120077335A1
公开(公告)日：2012-03-29
申请号：US13189978
申请日：2011-07-25
申请人： ERROL SANCHEZ , YI-CHIAU HUANG , DAVID K. CARLSON
发明人： ERROL SANCHEZ , YI-CHIAU HUANG , DAVID K. CARLSON
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262
摘要： Methods for depositing germanium-containing layers on silicon-containing layers are provided herein. In some embodiments, a method may include depositing a first layer atop an upper surface of the silicon-containing layer, wherein the first layer comprises predominantly germanium (Ge) and further comprises a lattice adjustment element having a concentration selected to enhance electrical activity of dopant elements, wherein the dopant elements are disposed in at least one of the first layer or in an optional second layer deposited atop of the first layer, wherein the optional second layer, if present, comprises predominantly germanium (Ge). In some embodiments, the second layer is deposited atop the first layer. In some embodiments, the second layer comprises germanium (Ge) and dopant elements.
摘要翻译：本文提供了在含硅层上沉积含锗层的方法。在一些实施例中，一种方法可以包括沉积位于含硅层的上表面顶部的第一层，其中第一层主要包含锗（Ge），并且还包括具有选择以增强掺杂剂的电活性的浓度的晶格调节元件元素，其中所述掺杂剂元素设置在所述第一层中的至少一个中或沉积在所述第一层顶部的任选的第二层中，其中所述任选的第二层（如果存在）主要包含锗（Ge）。在一些实施例中，第二层沉积在第一层的顶部。在一些实施例中，第二层包括锗（Ge）和掺杂元素。

7. 发明申请

US20130109159A1 GAS DISPERSION APPARATUS 有权
公开(公告)号：US20130109159A1
公开(公告)日：2013-05-02
申请号：US13284416
申请日：2011-10-28
申请人： DAVID K. CARLSON
发明人： DAVID K. CARLSON
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45574 , F17D1/04 , H01J37/32633 , Y10T137/6579 , Y10T137/85938 , Y10T137/87153 , Y10T137/87265 , Y10T137/87281 , Y10T137/87885
摘要： A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled to the ring opposite the top; a plurality of quartz plates disposed between the top and the bottom plate, wherein the plurality of plates are positioned above one another and spaced apart to form a plenum above each of the plurality of plates and the bottom plate; a plurality of quartz tubes to couple the plenums to the plurality of dispersion holes, each of the plurality of quartz tubes having a first end disposed within one of the plenums and having a second end coupled to one of the dispersion holes; and a plurality of conduits disposed through the top, wherein each of the plurality of conduits is coupled to one of the plenums.

8. 发明申请

US20110299282A1 WINDOW ASSEMBLY FOR USE IN SUBSTRATE PROCESSING SYSTEMS 有权
标题翻译：用于基板处理系统的窗口总成
公开(公告)号：US20110299282A1
公开(公告)日：2011-12-08
申请号：US13112109
申请日：2011-05-20
申请人： DAVID K. CARLSON
发明人： DAVID K. CARLSON
IPC分类号： F21V33/00 , E06B7/28 , E06B7/16
CPC分类号： H01L21/67115
摘要： Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element.
摘要翻译：本文提供了窗组件的实施例。在一些实施例中，一种用于衬底处理系统的窗户组件，其包括对光能至少部分透明的第一窗口; 对光能透明并基本上平行于第一窗的第二窗口; 以及分隔件，其设置在所述第一和第二窗口的周边边缘附近并且限定所述第一和第二窗口之间的密封间隙，其中所述隔板具有使气体流过所述密封间隙的入口和出口。在一些实施例中，一个或多个支撑元件设置在密封间隙中以保持第一和第二窗口之间的基本均匀的间隙距离。在一些实施例中，多个调光元件设置在间隙中以调节通过光调节元件的光能的一个或多个特性。

9. 发明申请

US20100071622A1 POLYMERIC COATING OF SUBSTRATE PROCESSING SYSTEM COMPONENTS FOR CONTAMINATION CONTROL 有权
标题翻译：用于污染控制的基板处理系统组件的聚合涂层
公开(公告)号：US20100071622A1
公开(公告)日：2010-03-25
申请号：US12234038
申请日：2008-09-19
申请人： DAVID K. CARLSON , Roger N. Anderson
发明人： DAVID K. CARLSON , Roger N. Anderson
IPC分类号： B05D5/00 , B32B27/04 , B32B9/00
CPC分类号： C23C30/00 , B05D5/083 , B05D7/14 , B05D2350/65 , C23C2/26 , C23C26/00 , C23C28/00 , Y10T428/239 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/3154
摘要： A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system. The protective coating includes nickel (Ni) and a flouropolymer.
摘要翻译：处理基板处理系统的一部分的金属表面以降低基板的加工表面附近的缺陷浓度的方法包括在金属表面上形成保护涂层，其中保护涂层包括镍（Ni）和含氟聚合物。在金属表面上形成保护涂层还可以包括在金属表面上形成镍层，用含氟聚合物浸渍镍层，以及从表面除去含氟聚合物，留下主要的镍表面，因此含氟聚合物主要是在下表面。基板处理系统包括其中引入反应气体的处理室，用于从处理室中去除材料的泵送系统，具有保护涂层的第一部件，其中所述保护涂层形成暴露于所述部件的表面衬底处理室的内部或泵送系统的内部。保护涂层包括镍（Ni）和氟聚合物。

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