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1. 发明授权

US06342453B1 Method for CVD process control for enhancing device performance 有权
标题翻译： CVD过程控制方法，用于提高设备性能
公开(公告)号：US06342453B1
公开(公告)日：2002-01-29
申请号：US09454423
申请日：1999-12-03
申请人： Shahab Khandan , Christopher T. Fulmer , Lori D. Washington , Herman P. Diniz , Lance A. Scudder , Arkadii V. Samoilov
发明人： Shahab Khandan , Christopher T. Fulmer , Lori D. Washington , Herman P. Diniz , Lance A. Scudder , Arkadii V. Samoilov
IPC分类号： H01L2131
CPC分类号： C23C16/45523 , C23C16/455 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L29/66242
摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.
摘要翻译：根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度并且在膜的第二点处具有与第一浓度不同的第二浓度。此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

2. 发明申请

US20120270384A1 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：US20120270384A1
公开(公告)日：2012-10-25
申请号：US13192101
申请日：2011-07-27
申请人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
发明人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
IPC分类号： H01L21/20 , C23C16/455 , C23C16/46
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

3. 发明申请

US20110100554A1 PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：外源化学气相沉积并联体系
公开(公告)号：US20110100554A1
公开(公告)日：2011-05-05
申请号：US12876563
申请日：2010-09-07
申请人： DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , HERMAN P. DINIZ
发明人： DAVID K. CARLSON , ERROL ANTONIO C. SANCHEZ , HERMAN P. DINIZ
IPC分类号： H01L21/465
CPC分类号： C23C16/44 , C30B25/08 , C30B25/14
摘要： Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.
摘要翻译：本文公开了用于外延沉积的并联系统的实施例。在一些实施例中，用于外延沉积的并联系统包括具有第一处理室和设置在第一主体内的第二处理室的第一主体; 耦合到所述第一和第二处理室中的每一个的共用气体注入系统; 以及联接到所述第一和第二处理室中的每一个的共用排气系统，所述排气系统独立地控制来自每个室的排气压力。在一些实施例中，气体注入系统提供进入每个室的气体的流速的独立控制。

4. 发明授权

US06911401B2 Method for CVD process control for enhancing device performance 有权
标题翻译： CVD过程控制方法，用于提高设备性能
公开(公告)号：US06911401B2
公开(公告)日：2005-06-28
申请号：US10665026
申请日：2003-09-16
申请人： Shahab Khandan , Christopher T. Fulmer , Lori D. Washington , Herman P. Diniz , Lance A. Scudder , Arkadii V. Samoilov
发明人： Shahab Khandan , Christopher T. Fulmer , Lori D. Washington , Herman P. Diniz , Lance A. Scudder , Arkadii V. Samoilov
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/331 , H01L21/31
CPC分类号： C23C16/45523 , C23C16/455 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L29/66242
摘要： A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.
摘要翻译：一种由一个或多个处理器实现的方法，包括接收将物种的多个流速与使用流速生成的膜内的物种的相应浓度相关联的第一信息; 在期望的膜中接收物种的期望浓度分布; 并且产生多个工艺步骤，当所述多个工艺步骤执行时，将部分地基于所述第一信息和期望的浓度分布来控制所述物质的流速，从而形成具有期望浓度分布的所需膜，其中，在所需浓度分布图中第一点处的物种与所需浓度分布图中第二个点处物种的第二浓度不同。还公开了一种计算机可读介质，系统和装置。

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