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1. 发明申请

US20100084656A1 PARTICLE EMISSION ANALYSIS FOR SEMICONDUCTOR FABRICATION STEPS 有权
标题翻译：用于半导体制造步骤的颗粒排放分析
公开(公告)号：US20100084656A1
公开(公告)日：2010-04-08
申请号：US12247474
申请日：2008-10-08
申请人： Cyril Cabral, JR. , Michael S. Gordon , Jeff McMurray , Liesl McMurray , Cristina Plettner , Paul Andrew Ronsheim
发明人： Cyril Cabral, JR. , Michael S. Gordon , Jeff McMurray , Liesl McMurray , Cristina Plettner , Paul Andrew Ronsheim
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： G01T1/00 , H01L22/10
摘要： A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.
摘要翻译：一种结构及其操作方法。该方法包括提供包括N个检测器的检测结构。 N是正整数。在制造工具中的检测结构和M产品结构上同时进行制造步骤，从而在检测结构上产生颗粒发射层。检测结构与M产品结构不同。 M产品结构相同。 M是正整数。在执行所述执行之后，分析从颗粒发射层发射颗粒对检测结构的影响。

2. 发明授权

US08158449B2 Particle emission analysis for semiconductor fabrication steps 有权
标题翻译：半导体制造步骤的粒子发射分析
公开(公告)号：US08158449B2
公开(公告)日：2012-04-17
申请号：US12247474
申请日：2008-10-08
申请人： Cyril Cabral, Jr. , Michael S. Gordon , Jeff McMurray , Liesl M. McMurray, legal representative , Cristina Plettner , Paul Andrew Ronsheim
发明人： Cyril Cabral, Jr. , Michael S. Gordon , Jeff McMurray , Cristina Plettner , Paul Andrew Ronsheim
IPC分类号： H01L21/00
CPC分类号： G01T1/00 , H01L22/10
摘要： A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.
摘要翻译：一种结构及其操作方法。该方法包括提供包括N个检测器的检测结构。 N是正整数。在制造工具中的检测结构和M产品结构上同时进行制造步骤，从而在检测结构上产生颗粒发射层。检测结构与M产品结构不同。 M产品结构相同。 M是正整数。在执行所述执行之后，分析从颗粒发射层发射颗粒对检测结构的影响。

3. 发明授权

US08347741B2 Specimen handling apparatus 失效
标题翻译：标本处理装置
公开(公告)号：US08347741B2
公开(公告)日：2013-01-08
申请号：US12791248
申请日：2010-06-01
申请人： Michael Hatzistergos , Jonathan Levy , Christopher Michael Molella , Paul Andrew Ronsheim , Dmitriy Shneyder , Vincent Vazquez
发明人： Michael Hatzistergos , Jonathan Levy , Christopher Michael Molella , Paul Andrew Ronsheim , Dmitriy Shneyder , Vincent Vazquez
IPC分类号： G01N1/00
CPC分类号： G01N23/2204
摘要： A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.
摘要翻译：提供样品处理装置，并且包括其中限定孔的主体和具有尖端部分和钻头的针，其具有可拆卸地插入孔中，其中末端部分至少部分暴露，孔和钻头各自为形成为使得当钻头插入孔中时，针被迫进入相对于其长轴的第一或第二旋转位置之一。

4. 发明授权

US06335262B1 Method for fabricating different gate oxide thicknesses within the same chip 失效
标题翻译：在同一芯片内制造不同栅极氧化物厚度的方法
公开(公告)号：US06335262B1
公开(公告)日：2002-01-01
申请号：US09231617
申请日：1999-01-14
申请人： Scott W. Crowder , Anthony Gene Domenicucci , Liang-Kai Han , Michael John Hargrove , Paul Andrew Ronsheim
发明人： Scott W. Crowder , Anthony Gene Domenicucci , Liang-Kai Han , Michael John Hargrove , Paul Andrew Ronsheim
IPC分类号： H01L2131
CPC分类号： H01L21/823462 , H01L21/31662 , Y10S148/116 , Y10S148/163 , Y10S438/981
摘要： A semiconductor structure having silicon dioxide layers of different thicknesses is fabricated by forming a sacrificial silicon dioxide layer on the surface of a substrate; implanting nitrogen ions through the sacrificial silicon dioxide layer into first areas of the semiconductor substrate; implanting chlorine and/or bromine ions through the sacrificial silicon dioxide layer into second areas of the semiconductor substrate where silicon dioxide having the highest thickness is to be formed; removing the sacrificial silicon dioxide layer; and then growing a layer of silicon dioxide on the surface of the semiconductor substrate. The growth rate of the silicon dioxide will be faster in the areas containing the chlorine and/or bromine ions and therefore the silicon dioxide layer will be thicker in those regions as compared to the silicon dioxide layer in the regions not containing the chlorine and/or bromine ions. The growth rate of the silicon dioxide will be slower in the areas containing the nitrogen ions and therefore the silicon dioxide layer will be thinner in those regions as compared to the silicon dioxide layer in the regions not containing the nitrogen ions. Also provided are structures obtained by the above process.
摘要翻译：通过在基板的表面上形成牺牲二氧化硅层来制造具有不同厚度的二氧化硅层的半导体结构; 将氮离子通过牺牲二氧化硅层注入到半导体衬底的第一区域中; 将氯和/或溴离子通过牺牲二氧化硅层注入到要形成具有最高厚度的二氧化硅的半导体衬底的第二区域中; 去除牺牲二氧化硅层; 然后在半导体衬底的表面上生长一层二氧化硅。在含有氯和/或溴离子的区域中，二氧化硅的生长速度将更快，因此与不含氯和/或溴离子的区域中的二氧化硅层相比，二氧化硅层在这些区域中将更厚。溴离子。与含氮离子的区域相比，在含氮离子的区域中，二氧化硅的生长速度较慢，因此与这些区域的二氧化硅层相比，二氧化硅层较薄。还提供了通过上述方法获得的结构。

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