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1. 发明授权

US06482307B2 Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing 有权
标题翻译：用于全面电镀或电解抛光的与晶片表面电接触的方法和装置
公开(公告)号：US06482307B2
公开(公告)日：2002-11-19
申请号：US09735546
申请日：2000-12-14
申请人： Jalal Ashjaee , Boguslaw A. Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
发明人： Jalal Ashjaee , Boguslaw A. Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
IPC分类号： C25D518
CPC分类号： C25D17/001 , C25D7/123 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.
摘要翻译：通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。在阳极和电接触之间施加电势，并且晶片相对于阳极和电触点移动。因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。

2. 发明授权

US07476304B2 Apparatus for processing surface of workpiece with small electrodes and surface contacts 有权
标题翻译：用于用小电极和表面接触处理工件表面的装置
公开(公告)号：US07476304B2
公开(公告)日：2009-01-13
申请号：US10947628
申请日：2004-09-21
申请人： Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
发明人： Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
IPC分类号： C25D17/00 , C25D5/00
CPC分类号： C25F7/00 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
摘要翻译：通过提供具有正面与工件正面的阳极区域并将工件正面与至少一个电气电连接的阳极进行导电材料沉积在导电材料上或从半导体工件的工件正面去除导电材料通过将电触点和工件正面推入彼此靠近，在阳极区域外部接触。在阳极和电接触之间施加电位，并且工件相对于阳极和电触点移动。因此允许在工件正面侧面上进行全面电镀或电解抛光。

3. 发明授权

US07309413B2 Providing electrical contact to the surface of a semiconductor workpiece during processing 有权
标题翻译：在加工期间向半导体工件的表面提供电接触
公开(公告)号：US07309413B2
公开(公告)日：2007-12-18
申请号：US10459321
申请日：2003-06-10
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D5/04 , C25D7/12 , C25F3/12
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

4. 发明授权

US06852630B2 Electroetching process and system 有权
标题翻译：电蚀过程和系统
公开(公告)号：US06852630B2
公开(公告)日：2005-02-08
申请号：US09841622
申请日：2001-04-23
申请人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
IPC分类号： B23H5/08 , C25F3/14 , H01L21/288 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/302
CPC分类号： H01L21/32115 , B23H5/08 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/7684
摘要： A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
摘要翻译：用于可选地沉积或蚀刻晶片层的系统包括与晶片相对的掩模板，掩模板具有将溶液输送到晶片的多个开口。电极组件具有第一电极部件和第二电极部件，该第二电极部件具有可操作地与晶片的周边部分和中心部分接合的通道。通道将解决方案传输到面罩。

5. 发明授权

US07282124B2 Device providing electrical contact to the surface of a semiconductor workpiece during processing 失效
公开(公告)号：US07282124B2
公开(公告)日：2007-10-16
申请号：US10459320
申请日：2003-06-10
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D17/00
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

6. 发明授权

US06942780B2 Method and apparatus for processing a substrate with minimal edge exclusion 有权
标题翻译：用于处理具有最小边缘排除的基板的方法和装置
公开(公告)号：US06942780B2
公开(公告)日：2005-09-13
申请号：US10460032
申请日：2003-06-11
申请人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D7/12 , C25D17/00 , C25D17/08 , C25D21/00 , H01L21/288 , H01L21/321 , H01L21/768 , C25D5/00 , C25D5/08 , C25F3/00
CPC分类号： C25D5/02 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： An apparatus for processing a material on a wafer surface includes a cavity defined by a peripheral wall and configured to direct a process solution and direct it to the surface to to a first wafer surface region without being directed to a second wafer surface region, a head configured to hold the wafer so that the surface of the wafer faces the cavity, and an electrical contact member positioned outside the cavity peripheral wall and configured to contact the second wafer surface region extending beyond the cavity, when the wafer is moved relative to the contact member. Advantages of the invention include substantially full surface treatment of the wafer.
摘要翻译：用于处理晶片表面上的材料的设备包括由周壁限定的空腔，并且被配置为引导处理溶液并将其引导到表面到达第一晶片表面区域而不被引导到第二晶片表面区域，头部被配置为保持所述晶片使得所述晶片的表面面向所述空腔;以及电接触构件，其定位在所述腔周壁外部并且被配置为当所述晶片相对于所述触点移动时接触延伸超过所述腔的所述第二晶片表面区域会员。本发明的优点包括晶片的基本全表面处理。

7. 发明授权

US07491308B2 Method of making rolling electrical contact to wafer front surface 失效
标题翻译：制造与晶片正面滚动电接触的方法
公开(公告)号：US07491308B2
公开(公告)日：2009-02-17
申请号：US11123268
申请日：2005-05-05
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D5/00 , C25B9/00
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

8. 发明授权

US07311811B2 Device providing electrical contact to the surface of a semiconductor workpiece during processing 有权
标题翻译：在处理过程中提供与半导体工件的表面的电接触的装置
公开(公告)号：US07311811B2
公开(公告)日：2007-12-25
申请号：US10826219
申请日：2004-04-16
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25F3/02
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

9. 发明授权

US06932896B2 Method and apparatus for avoiding particle accumulation in electrodeposition 有权
标题翻译：用于避免电沉积中的颗粒积聚的方法和装置
公开(公告)号：US06932896B2
公开(公告)日：2005-08-23
申请号：US09982558
申请日：2001-10-17
申请人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： B08B1/04 , B24B37/04 , B24B53/00 , B24B53/007 , C25D5/22 , C25D7/12 , C25F3/16 , H01L21/288 , H01L21/304 , H01L21/768
CPC分类号： B24B53/017 , B24B37/04 , B24B53/001 , C25D5/22 , C25D17/001 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.
摘要翻译：提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。根据示例性的方法，工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压被反转。根据另一示例性方法，使用诸如刷子的机械接触构件对工件表面影响装置进行调节，并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。根据另一示例性方法，在电沉积期间，工件表面影响装置在不同方向上旋转。

10. 发明授权

US06815354B2 Method and structure for thru-mask contact electrodeposition 失效
标题翻译：通过掩模接触电沉积的方法和结构
公开(公告)号：US06815354B2
公开(公告)日：2004-11-09
申请号：US10282976
申请日：2002-10-28
申请人： Cyprian Uzoh , Bulent M. Basol , Homayoun Talieh
发明人： Cyprian Uzoh , Bulent M. Basol , Homayoun Talieh
IPC分类号： H01L2100
CPC分类号： H01L21/7684 , H01L21/76885 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.
摘要翻译：提供了在基板上形成导电结构的工艺。衬底具有通过诸如光致抗蚀剂的掩模层中的多个开口部分暴露的铜籽晶层。掩蔽层形成在种子层上。该方法通过开口将铜电镀到种子层上。在铜电镀过程中，屏蔽层的表面被机械扫掠。该过程形成填充掩模层中的多个孔的平面导电材料沉积物。导电沉积物的上端基本上是共面的。

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