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1. 发明授权

US06852630B2 Electroetching process and system 有权
标题翻译：电蚀过程和系统
公开(公告)号：US06852630B2
公开(公告)日：2005-02-08
申请号：US09841622
申请日：2001-04-23
申请人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
IPC分类号： B23H5/08 , C25F3/14 , H01L21/288 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/302
CPC分类号： H01L21/32115 , B23H5/08 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/7684
摘要： A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
摘要翻译：用于可选地沉积或蚀刻晶片层的系统包括与晶片相对的掩模板，掩模板具有将溶液输送到晶片的多个开口。电极组件具有第一电极部件和第二电极部件，该第二电极部件具有可操作地与晶片的周边部分和中心部分接合的通道。通道将解决方案传输到面罩。

2. 发明授权

US07250104B2 Method and system for optically enhanced metal planarization 有权
标题翻译：用于光学增强金属平面化的方法和系统
公开(公告)号：US07250104B2
公开(公告)日：2007-07-31
申请号：US10637731
申请日：2003-08-08
申请人： Cyprian E. Uzoh , Homayoun Talieh , Bulent M. Basol , Halit N. Yakupoglu
发明人： Cyprian E. Uzoh , Homayoun Talieh , Bulent M. Basol , Halit N. Yakupoglu
IPC分类号： C25F3/00
CPC分类号： H01L21/32125
摘要： The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.
摘要翻译：所描述的方法和系统提供了诸如半导体晶片的工件的表面，边缘和/或斜面处的辐射辅助材料沉积，去除和平坦化。在具有形貌特征的工件表面上执行的示例性工艺包括辐射辅助电化学材料沉积，其在特征之外产生吸附物层以抑制特征外的沉积，并且通过电荷保存沉积到特征中以实现例如，平面表面轮廓。进一步的示例性方法是材料的辐射辅助电化学去除，其在特征中产生吸附物层以抑制材料从特征中的去除并且通过电荷保持除去特征外的材料，从而例如，实现了平面表面轮廓。

3. 发明授权

US07097755B2 Electrochemical mechanical processing with advancible sweeper 有权
公开(公告)号：US07097755B2
公开(公告)日：2006-08-29
申请号：US10288558
申请日：2002-11-04
申请人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
IPC分类号： C25D5/00 , C25F3/00
CPC分类号： H01L21/76879 , B24B21/04 , B24B37/046 , B24B37/26 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

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