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1. 发明授权

US5691600A Edge electron emitters for an array of FEDS 失效
标题翻译：用于FEDS阵列的边缘电子发射器
公开(公告)号：US5691600A
公开(公告)日：1997-11-25
申请号：US489017
申请日：1995-06-08
申请人： Curtis D. Moyer , Jeffery A. Whalin , Wayne Morrow , Steven A. Voight
发明人： Curtis D. Moyer , Jeffery A. Whalin , Wayne Morrow , Steven A. Voight
IPC分类号： G09F9/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01J29/04 , H01J29/46 , H01J31/12 , H01J1/66
CPC分类号： H01J9/025 , H01J29/467 , H01J3/022 , H01J2201/30423 , H01J2329/00
摘要： A plurality of edge emitters in a FED array include a plate shaped substrate having parallel, laterally spaced apart grooves formed in a first surface and parallel, laterally spaced apart grooves formed in the opposite surface so that each second groove crosses each first groove at an angle. The combined depths of the grooves is greater than the thickness of the plate substrate so that an opening is formed through the substrate at each point where a second groove crosses a first groove. Gate metal is deposited on the surfaces in the openings and emitter material is deposited on the lands of the first surface to form FED emitters in each opening.
摘要翻译： FED阵列中的多个边缘发射器包括板形基板，该板状基板具有形成在第一表面中的平行的横向间隔开的槽，并且在相对表面中形成平行的横向间隔开的槽，使得每个第二槽以一定角度与每个第一槽交叉。槽的组合深度大于板基板的厚度，使得在第二槽与第一槽交叉的每个点处通过基板形成开口。栅极金属沉积在开口的表面上，发射体材料沉积在第一表面的焊盘上，以在每个开口中形成FED发射体。

2. 发明授权

US06373174B1 Field emission device having a surface passivation layer 失效
标题翻译：具有表面钝化层的场致发射器件
公开(公告)号：US06373174B1
公开(公告)日：2002-04-16
申请号：US09459119
申请日：1999-12-10
申请人： Albert Alec Talin , Curtis D. Moyer , Kenneth A. Dean , Jeffrey H. Baker , Steven A. Voight
发明人： Albert Alec Talin , Curtis D. Moyer , Kenneth A. Dean , Jeffrey H. Baker , Steven A. Voight
IPC分类号： H01J102
CPC分类号： H01J29/84 , H01J3/022 , H01J21/105
摘要： A field emission device (100, 200, 300, 400, 500) includes a substrate (110, 210, 310, 410, 510), a cathode (115, 215, 315, 415, 515) formed thereon, a plurality of electron emitters (170, 270, 370, 470, 570) and a plurality of gate electrodes (150, 250, 350, 450, 550) proximately disposed to the plurality of electron emitters (170, 270, 370, 470, 570) for effecting electron emission therefrom, a dielectric layer (140, 240, 340, 440, 540) having a major surface (143, 243, 343, 443, 543), a surface passivation layer (190, 290, 390, 490, 590) formed on the major surface (143, 243, 343, 443, 543), and an anode (180, 280, 380, 480, 580) spaced from the gate electrodes (250, 350, 450, 550).
摘要翻译：场发射器件（100,200,300,400,500）包括衬底（110,210,310,410,510），形成在其上的阴极（115,215,315,415,515），多个电子发射器（170,270,370,470,570）以及近似设置在多个电子发射器（170,270,370,470,570）上的多个栅电极（150,250,350,450,550），用于实现具有主表面（143,243,343,443,543）的电介质层（140,240,340,440,540），形成的表面钝化层（190,290,390,490,590）在主表面（143,243,343,443,543）上，以及与栅电极（250,350,450,550）间隔开的阳极（180,280,380,480,580）。

3. 发明授权

US6137213A Field emission device having a vacuum bridge focusing structure and method 失效
标题翻译：具有真空桥聚焦结构和方法的场发射装置
公开(公告)号：US6137213A
公开(公告)日：2000-10-24
申请号：US176150
申请日：1998-10-21
申请人： Curtis D. Moyer , Peter A. Smith , Robert H. Reuss , Troy A. Trottier , Steven A. Voight , Diane A. Carrillo , Kevin J. Nordquist , Jaynal A. Molla , David W. Jacobs , Kathleen A. Tobin
发明人： Curtis D. Moyer , Peter A. Smith , Robert H. Reuss , Troy A. Trottier , Steven A. Voight , Diane A. Carrillo , Kevin J. Nordquist , Jaynal A. Molla , David W. Jacobs , Kathleen A. Tobin
IPC分类号： H01J1/304 , H01J29/46 , H01J29/94 , H01J31/12 , H01J1/02
CPC分类号： H01J29/467 , H01J31/127
摘要： A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).
摘要翻译：场致发射器件（100,150）包括具有电子发射器（116）的阴极板（102,180），具有由电子激活的荧光体（107,207,307,407）的阳极板（104,170））和由电子发射器（116）发射的用于聚焦电子（119）的真空电桥聚焦结构（118,158,218,318）。真空桥聚焦结构（118,158,218,318）具有连接到阴极板（102,180）上的平台（121,122,221,322），并且还具有桥梁（120,220,320），其中（121,122,221,322,421）之上和之外延伸以提供与阴极板（102,180）间隔开的自支撑结构。

4. 发明授权

US5430327A Ohmic contact for III-V semiconductor materials 失效
标题翻译：欧姆接触III-V半导体材料
公开(公告)号：US5430327A
公开(公告)日：1995-07-04
申请号：US121081
申请日：1993-09-14
申请人： Schyi-Yi Wu , Hang M. Liaw , Curtis D. Moyer , Steven A. Voight , Israel A. Lesk
发明人： Schyi-Yi Wu , Hang M. Liaw , Curtis D. Moyer , Steven A. Voight , Israel A. Lesk
IPC分类号： H01L21/285 , H01L23/532 , H01L23/48 , H01L29/161 , H01L29/205 , H01L29/40
CPC分类号： H01L23/532 , H01L21/28575 , H01L2924/0002 , Y10S148/02
摘要： An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed which is dry etchable using reactive ions such as chlorine or fluorine and substantially free of arsenic. Subsequently, a portion of the contact system is dry etched using reactive ions such as chlorine or fluorine to leave a portion of the contact system remaining on the source/drain regions. Then, the III-V semiconductor material and the contact system are annealed in an atmosphere substantially free of arsenic at a temperature at which at least a part of the contact system is alloyed with the source/drain regions to form an ohmic contact with the source/drain regions of the III-V semiconductor material.
摘要翻译：制造与III-V半导体材料的欧姆接触。首先，提供III-V族半导体材料。然后在III-V半导体材料中形成源/漏区。在III-V半导体材料上，形成了使用诸如氯或氟的活性离子并且基本上不含砷的可干蚀刻的接触系统。随后，使用诸如氯或氟的活性离子干接刻蚀接触系统的一部分，以使接触系统的一部分留在源/漏区上。然后，III-V族半导体材料和接触系统在基本上不含砷的气氛中在至少一部分接触系统与源极/漏极区域合金化的温度下退火，以形成与源极的欧姆接触 /漏极区域。

5. 发明授权

US5275971A Method of forming an ohmic contact to III-V semiconductor materials 失效
标题翻译：形成与III-V半导体材料的欧姆接触的方法
公开(公告)号：US5275971A
公开(公告)日：1994-01-04
申请号：US871785
申请日：1992-04-20
申请人： Schyi-Yi Wu , Hang M. Liaw , Curtis D. Moyer , Steven A. Voight , Israel A. Lesk
发明人： Schyi-Yi Wu , Hang M. Liaw , Curtis D. Moyer , Steven A. Voight , Israel A. Lesk
IPC分类号： H01L21/285 , H01L23/532 , H01L21/441 , H01L21/324
CPC分类号： H01L23/532 , H01L21/28575 , H01L2924/0002 , Y10S148/02
摘要： An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed which is dry etchable using reactive ions such as chlorine or fluorine and substantially free of arsenic. Subsequently, a portion of the contact system is dry etched using reactive ions such as chlorine or fluorine to leave a portion of the contact system remaining on the source/drain regions. Then, the III-V semiconductor material and the contact system are annealed in an atmosphere substantially free of arsenic at a temperature at which at least a part of the contact system is alloyed with the source/drain regions to form an ohmic contact with the source/drain regions of the III-V semiconductor material.
摘要翻译：制造与III-V半导体材料的欧姆接触。首先，提供III-V族半导体材料。然后在III-V半导体材料中形成源/漏区。在III-V半导体材料上，形成了使用诸如氯或氟的活性离子并且基本上不含砷的可干蚀刻的接触系统。随后，使用诸如氯或氟的活性离子干接刻蚀接触系统的一部分，以使接触系统的一部分留在源/漏区上。然后，III-V族半导体材料和接触系统在基本上不含砷的气氛中在至少一部分接触系统与源极/漏极区域合金化的温度下退火，以形成与源极的欧姆接触 /漏极区域。

6. 发明授权

US5164329A Fabricating a low leakage current LED 失效
标题翻译：制造低漏电流LED
公开(公告)号：US5164329A
公开(公告)日：1992-11-17
申请号：US767956
申请日：1991-09-30
申请人： Curtis D. Moyer , Steven A. Voight
发明人： Curtis D. Moyer , Steven A. Voight
IPC分类号： H01L21/76 , H01L33/00 , H01L33/30 , H01S5/227 , H01S5/30 , H01S5/32
CPC分类号： H01L33/305 , H01L33/0025 , H01L33/0062 , H01S5/305 , H01S5/2275 , H01S5/3072 , H01S5/3086 , H01S5/3211
摘要： A method of reducing the leakage current of a III-V compound semiconductor device (10) includes providing the device with a confinement layer having two sections (13, 14). A first section (14) has a higher doping concentration than a second section (13). An energy barrier that confines minority carriers to an active layer (12) of the device (10) is formed by diffusing a dopant into a portion of the active layer (12) and the two sections (13, 14) of the confinement layer. During the diffusion, the conductivity type of a portion of the lower doped second section (13) is inverted while the higher doped first section (14) is not inverted.
摘要翻译：降低III-V族化合物半导体器件（10）的漏电流的方法包括为器件提供具有两个部分（13,14）的约束层。第一部分（14）具有比第二部分（13）更高的掺杂浓度。将少数载流子限制到器件（10）的有源层（12）的能量势垒通过将掺杂剂扩散到约束层的有源层（12）和两个部分（13,14）的一部分中而形成。在扩散期间，下掺杂第二部分（13）的一部分的导电类型被反转，而较高掺杂的第一部分（14）不反转。

7. 发明授权

US5023503A Super high frequency oscillator/resonator 失效
标题翻译：超高频振荡器/谐振器
公开(公告)号：US5023503A
公开(公告)日：1991-06-11
申请号：US460454
申请日：1990-01-03
申请人： Ronald Legge , Curtis D. Moyer
发明人： Ronald Legge , Curtis D. Moyer
IPC分类号： H03B5/30 , H03H3/007 , H03H9/05 , H03H9/17 , H03H9/24 , H03H9/25 , H04R17/10
CPC分类号： H03H9/17
摘要： A method of filtering an AC signal using a piezoelectric beam is provided. A piezoelectric film is formed on a mechanical support and a portion of the piezoelectric film forms a beam which extends beyond the mechanical support so that a cavity is formed underneath the beam, and the beam is free to vibrate in the cavity at a resonant frequency when an acoustic wave is propagated in the piezoelectric layer.A depletion region is formed under a Schottky contact which serves as a drive electrode. An unfiltered AC signal is coupled to the drive electrode thereby establishing an acoustic wave when the unfiltered AC signal comprises a component at the resonant frequency. Surface charge on the piezoelectric film resulting from vibration of the beam allows the resonant frequency component of the unfiltered AC signal to pass through the depletion region. Alternatively, the resonant frequency component can be passed by a tunnel current through the cavity.
摘要翻译：提供了使用压电束对AC信号进行滤波的方法。在机械支架上形成压电薄膜，并且压电薄膜的一部分形成一个延伸超过机械支架的光束，从而在光束的下方形成空腔，并且光束以谐振频率自由地在空腔中振动，声波在压电层中传播。在用作驱动电极的肖特基接触下形成耗尽区。未过滤的AC信号耦合到驱动电极，从而当未滤波的AC信号包括谐振频率处的分量时建立声波。由光束的振动导致的压电膜上的表面电荷允许未滤波的AC信号的谐振频率分量通过耗尽区。或者，谐振频率分量可以通过隧道电流通过空腔。

8. 发明授权

US4959702A Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate 失效
标题翻译： Si-GaP-Si异质结双极晶体管（HBT）
公开(公告)号：US4959702A
公开(公告)日：1990-09-25
申请号：US417417
申请日：1989-10-05
申请人： Curtis D. Moyer , Raymond K. Tsui
发明人： Curtis D. Moyer , Raymond K. Tsui
IPC分类号： H01L29/737
CPC分类号： H01L29/7378
摘要： A heterojunction bipolar transistor (HBT) is provided having a silicon substrate in which a conventional junction base is formed. A coherently strained layer of semiconductor material having a wider band gap than silicon, such as gallium phosphide, is formed over the base to form a first portion of an emitter multilayer. A second portion of the emitter multilayer comprises silicon which can be epitaxially grown on the coherently strained layer. A thin heteropotential barrier is thus formed at the base-emitter junction which preferentially allows electrons to move from emitter to base while significantly reducing hole current from base to emitter, thereby improving emitter injection efficiency and current gain.
摘要翻译：提供了具有其中形成常规接合基底的硅衬底的异质结双极晶体管（HBT）。在基底上形成具有比硅更宽带隙的诸如磷化镓的相干应变层的半导体材料以形成发射极多层的第一部分。发射极多层的第二部分包括可在相干应变层上外延生长的硅。因此，在基极 - 发射极结处形成薄的势能势垒，其优先地允许电子从发射极移动到基极，同时显着减少从基极到发射极的空穴电流，从而提高发射极注入效率和电流增益。

9. 发明授权

US08722432B2 Methods and system for on-chip decoder for array test 有权
标题翻译：用于阵列测试的片上解码器的方法和系统
公开(公告)号：US08722432B2
公开(公告)日：2014-05-13
申请号：US13259800
申请日：2010-02-23
申请人： Edward J. Bawolek , Curtis D. Moyer , Sameer M. Venugopal
发明人： Edward J. Bawolek , Curtis D. Moyer , Sameer M. Venugopal
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/00 , G09G3/006 , G09G2320/0295 , G09G2330/04 , G09G2330/10 , G09G2330/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides devices capable of testing the electrical performance of thin-film transistor backplane arrays and methods for their use.
摘要翻译：本发明提供能够测试薄膜晶体管背板阵列的电气性能的装置及其使用方法。

10. 发明授权

US6114802A Field emission device having stamped substrate and method 失效
标题翻译：具有冲压基板和方法的场致发射器件
公开(公告)号：US6114802A
公开(公告)日：2000-09-05
申请号：US808382
申请日：1997-02-28
申请人： Craig Amrine , Kenneth Dean , Curtis D. Moyer
发明人： Craig Amrine , Kenneth Dean , Curtis D. Moyer
IPC分类号： H01J3/02 , H01J29/02 , H01J19/24 , H01J29/04
CPC分类号： H01J3/022 , H01J29/028 , H01J2201/30423 , H01J2329/8615
摘要： A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).
摘要翻译：场致发射器件（400）包括由可塑性变形的陶瓷制成的可塑性变形的陶瓷冲压衬底（200），在优选实施例中，其包括压延带。塑性可变形的陶瓷冲压衬底（200）包括第一和第二相对表面（202,204）并且限定孔（206），其中形成有引出电极（410）。场发射器件（400）还包括形成在第一相对表面（202）上的电子发射层（418）。阴极（420）设置在电子发射层（418）上，并以90°的角度与提取电极（410）交叉。制造所述场发射装置（400）的方法包括用模具（300）冲压软化的压延带的层（100）以限定孔（206）和凹槽（208,212,214）。

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