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    • 2. 发明授权
    • Post CMP clean brush with torque monitor
    • 后置CMP清洁刷与扭矩监视器
    • US06269510B1
    • 2001-08-07
    • US09225073
    • 1999-01-04
    • Gary Joseph BeardsleyTimothy Scott BullardCuc Kim HuynhTheodore Gerard van KesselDavid Louis Walker
    • Gary Joseph BeardsleyTimothy Scott BullardCuc Kim HuynhTheodore Gerard van KesselDavid Louis Walker
    • A46B1304
    • H01L21/67259H01L21/67046H01L21/67253Y10S134/902
    • An apparatus for and method of detecting the presence of a brush used in a semiconductor wafer cleaner for post-CMP processing is described. Semiconductor wafers are loaded into the wet environment of the wafer cleaner, affixed to a rotatable fixture and rotated at high speed. The rotatable fixture is effectuated by a servo motor linked to a servo controller and a torque monitor. A first torque on the rotating wafer is calculated prior to the start of the brush cleaning cycle. During the brush cleaning cycle, as the brush within the brush cleaner contacts the rotating wafer, the torque on the wafer increases and a second torque is calculated. If, during the brush cleaning cycle, the second torque calculation is substantially equal to the first torque calculation, the brush cleaner is not contacting the wafer and cleaning has not progressed. A tool user can be notified to reaffix the brush within the cleaner. When the second torque calculation is greater than expected, the tool user can be notified that the brush downforce has been improperly set. Inadequate removal of CMP residue is detected before entire wafer lots have passed through an ineffective brush cleaning cycle prior to an inspection point.
    • 描述了用于检测用于后CMP处理的半导体晶片清洁器中的刷子的存在的装置和方法。 将半导体晶片装载到晶片清洁器的湿润环境中,固定到可旋转夹具并以高速旋转。 可旋转夹具由连接到伺服控制器和扭矩监视器的伺服电机实现。 在刷清洁循环开始之前计算旋转晶片上的第一转矩。 在刷清洁循环期间,当刷子清洁器内的刷子接触旋转晶片时,晶片上的扭矩增加并且计算第二转矩。 如果在刷清洁循环期间,第二扭矩计算基本上等于第一扭矩计算,则刷清洁器不接触晶片,并且清洁没有进行。 可以通知工具用户以清理清洁剂中的刷子。 当第二扭矩计算大于预期时,可以通知工具用户刷子下压力未正确设置。 在整个晶片批次在检查点之前通过无效的刷子清洁循环之前,检测到不充分的CMP残留物的去除。
    • 3. 发明授权
    • Process for removing residue from a semiconductor wafer after
chemical-mechanical polishing
    • 化学机械抛光后从半导体晶片去除残留物的工艺
    • US5704987A
    • 1998-01-06
    • US588943
    • 1996-01-19
    • Cuc Kim HuynhMatthew Jeremy RuttenSusan L. CohenDouglas Paul NadeauRobert Albin JurjevicJames Albert Gilhooly
    • Cuc Kim HuynhMatthew Jeremy RuttenSusan L. CohenDouglas Paul NadeauRobert Albin JurjevicJames Albert Gilhooly
    • B08B1/04B24B37/04H01L21/3105B08B7/00
    • B08B1/04B24B37/04H01L21/31053
    • A method for cleaning the surface of a semiconductor wafer by removing residual slurry particles adhered to the wafer surface after chemical-mechanical polishing is provided. The semiconductor wafer is subjected to a first polishing step using a basic aqueous solution of a nonionic polymeric surfactant comprising alkylphenoxypolyethoxyethanol, preferably nonylphenoxypolyethoxyethanol, at a concentration between about 30 to about 100 ppm and a quaternary ammonium hydroxide such as TMAH at a concentration between about 2.5% and about 6% by weight. A downforce of between about 0 and 2 psi (1.4.times.10.sup.5 dynes/cm.sup.2) is applied for at least 15 seconds. A second polishing step with an applied downforce of at least 4 psi is then employed while applying purified water. The method provides at least a ten fold reduction in the number of submicronic slurry particles remaining on the wafer surface and can be completed within a commercially acceptable amount of time. In addition, particles as small as 0.007 .mu.m can be removed. The method also provides a level of accuracy in the predictability of the number of residual particles remaining on the wafer surface.
    • 提供了通过在化学机械抛光后除去附着在晶片表面上的残留浆料颗粒来清洁半导体晶片的表面的方法。 使用浓度为约30至约100ppm的浓度为约30至约100ppm的烷基苯氧基聚乙氧基乙醇,优选壬基苯氧基聚乙氧基乙醇的非离子聚合物表面活性剂碱性水溶液和浓度为约2.5的TMAH等季铵氢氧化物,对半导体晶片进行第一抛光步骤 %和约6重量%。 施加约0和2psi(1.4×10 5达因/ cm 2)之间的下压力至少15秒。 然后在施加净化水的同时使用具有至少4psi的施加的下压力的第二抛光步骤。 该方法提供了在晶片表面上残留的亚微米浆料颗粒数量的至少十倍的减少,并且可以在商业上可接受的时间内完成。 此外,可以除去小至0.007μm的颗粒。 该方法还提供了在晶片表面上残留的残留颗粒的数量的可预测性的精度水平。
    • 4. 发明授权
    • Post CMP cleaning method using a brush cleaner with torque monitor
    • 后CMP清洁方法使用带有扭矩监视器的清洁刷
    • US06352596B2
    • 2002-03-05
    • US09876583
    • 2001-06-07
    • Gary Joseph BeardsleyTimothy Scott BullardCuc Kim HuynhTheodore Gerard van KesselDavid Louis Walker
    • Gary Joseph BeardsleyTimothy Scott BullardCuc Kim HuynhTheodore Gerard van KesselDavid Louis Walker
    • A46B1304
    • H01L21/67259H01L21/67046H01L21/67253Y10S134/902
    • A method of detecting the presence of a brush used in a semiconductor wafer cleaner for post-CMP processing is described. Semiconductor wafers are loaded into the wet environment of the wafer cleaner, affixed to a rotatable fixture and rotated at high speed. The rotatable fixture is effectuated by a servo motor linked to a servo controller and a torque monitor. A first torque on the rotating wafer is calculated prior to the start of the brush cleaning cycle. During the brush cleaning cycle, as the brush within the brush cleaner contacts the rotating wafer, the torque on the wafer increases and a second torque is calculated. If, during the brush cleaning cycle, the second torque calculation is substantially equal to the first torque calculation, the brush cleaner is not contacting the wafer and cleaning has not progressed. A tool user can be notified to reaffix the brush within the cleaner. When the second torque calculation is greater than expected, the tool user can be notified that the brush downforce has been improperly set. Inadequate removal of CMP residue is detected before entire wafer lots have passed through an ineffective brush cleaning cycle prior to an inspection point.
    • 描述了用于后CMP处理的用于半导体晶片清洁器中的刷子的存在的方法。 将半导体晶片装载到晶片清洁器的湿润环境中,固定到可旋转夹具并以高速旋转。 可旋转夹具由连接到伺服控制器和扭矩监视器的伺服电机实现。 在刷清洁循环开始之前计算旋转晶片上的第一转矩。 在刷清洁循环期间,当刷子清洁器内的刷子接触旋转晶片时,晶片上的扭矩增加并且计算第二转矩。 如果在刷清洁循环期间,第二扭矩计算基本上等于第一扭矩计算,则刷清洁器不接触晶片,并且清洁没有进行。 可以通知工具用户以清理清洁剂中的刷子。 当第二扭矩计算大于预期时,可以通知工具用户刷子下压力未正确设置。 在整个晶片批次在检查点之前通过无效的刷子清洁循环之前,检测到不充分的CMP残留物的去除。
    • 5. 发明授权
    • In-situ/self-propelled polishing pad conditioner and cleaner
    • 原位/自推进抛光垫调节剂和清洁剂
    • US06179693B2
    • 2001-01-30
    • US09166785
    • 1998-10-06
    • Gary Joseph BeardsleyCuc Kim HuynhDavid Louis Walker
    • Gary Joseph BeardsleyCuc Kim HuynhDavid Louis Walker
    • B24B100
    • B24B53/017B24B53/013B24B53/12
    • A non-motorized polishing pad conditioner and cleaner having a free-wheeling conditioner head with a plurality of channels to direct the flow of a cleansing fluid; a hollow shaft connected to a fluid source; and a conditioning pad to facilitate loosening the debris found on a polishing pad wherein the pad conditioner and cleaner is self-propelled upon contact with a rotating polishing pad. A cantilever may be used to attach the conditioner and cleaner adjacent to the polishing apparatus. The cantilever may contain a motorized element for extending and retracting the conditioner and cleaner over the radius of a polishing pad such that the entire surface of the polishing pad may be conditioned and cleaned. A method of conditioning and cleaning a polishing pad while simultaneously polishing a silicon wafer is also described.
    • 一种非机动化抛光垫调节剂和清洁器,具有具有多个通道以引导清洗流体流动的续流调节头; 连接到流体源的空心轴; 以及调节垫以便于松动在抛光垫上发现的碎屑,其中垫调节剂和清洁剂在与旋转的抛光垫接触时自行推进。 可以使用悬臂将附着在抛光装置上的护发素和清洁剂。 悬臂可以包含用于在调整器和清洁器的半径上延伸和缩回抛光垫的电动元件,使得抛光垫的整个表面可以被调节和清洁。 还描述了在同时抛光硅晶片的同时调整和清洁抛光垫的方法。
    • 6. 发明授权
    • CMP apparatus with built-in slurry distribution and removal
    • 内置浆料分配和去除的CMP设备
    • US06299515B1
    • 2001-10-09
    • US09599920
    • 2000-06-22
    • Gary J. BeardsleyCuc Kim HuynhSteven J. MessierDavid L. Walker
    • Gary J. BeardsleyCuc Kim HuynhSteven J. MessierDavid L. Walker
    • B24B100
    • B24B37/16B24B57/02
    • A polishing apparatus for polishing a substrate. The polishing apparatus has a slurry delivery system for delivering slurry to the apparatus; a porous polishing pad having an upper surface at which the substrate is polished; and a rotating platen upon which the porous pad lies. The rotating platen has a recess which has a first portion in communication with the delivery means for delivering slurry into the first portion. The recess further has a second portion extending under the polishing pad. Slurry is delivered from the first portion to the second portion and to the upper surface of the pad where it aids in the polishing of the substrate. Preferably, the first portion of the recess is situated such that the slurry delivered to the top surface returns to the first portion for removal or reuse due to the rotational force of the rotating platen.
    • 一种用于抛光衬底的抛光装置。 抛光装置具有用于将浆料输送到装置的浆料输送系统; 多孔抛光垫,其具有抛光所述基材的上表面; 以及多孔垫所在的旋转台板。 旋转台板具有凹槽,该凹槽具有与输送装置连通的第一部分,用于将浆料输送到第一部分。 凹部还具有在抛光垫下方延伸的第二部分。 浆料从第一部分传递到第二部分并且到达衬垫的上表面,其中它有助于衬底的抛光。 优选地,凹部的第一部分被定位成使得输送到顶表面的浆料由于旋转压盘的旋转力而返回到第一部分以用于去除或再利用。
    • 8. 发明授权
    • CMP apparatus with built-in slurry distribution and removal
    • 内置浆料分配和去除的CMP设备
    • US6135865A
    • 2000-10-24
    • US143554
    • 1998-08-31
    • Gary J. BeardsleyCuc Kim HuynhSteven J. MessierDavid L. Walker
    • Gary J. BeardsleyCuc Kim HuynhSteven J. MessierDavid L. Walker
    • B24B1/00B24B37/16B24B57/02B24B7/22
    • B24B37/16B24B57/02
    • A polishing apparatus for polishing a substrate. The polishing apparatus has a slurry delivery system for delivering slurry to the apparatus; a porous polishing pad having an upper surface at which the substrate is polished; and a rotating platen upon which the porous pad lies. The rotating platen has a recess which has a first portion in communication with the delivery means for delivering slurry into the first portion. The recess further has a second portion extending under the polishing pad. Slurry is delivered from the first portion to the second portion and to the upper surface of the pad where it aids in the polishing of the substrate. Preferably, the first portion of the recess is situated such that the slurry delivered to the top surface returns to the first portion for removal or reuse due to the rotational force of the rotating platen.
    • 一种用于抛光衬底的抛光装置。 抛光装置具有用于将浆料输送到装置的浆料输送系统; 多孔抛光垫,其具有抛光所述基材的上表面; 以及多孔垫所在的旋转台板。 旋转台板具有凹槽,该凹槽具有与输送装置连通的第一部分,用于将浆料输送到第一部分。 凹部还具有在抛光垫下方延伸的第二部分。 浆料从第一部分传递到第二部分并且到达衬垫的上表面,其中它有助于衬底的抛光。 优选地,凹部的第一部分被定位成使得输送到顶表面的浆料由于旋转压盘的旋转力而返回到第一部分以用于去除或再利用。