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1. 发明专利

JP2009124156A Mbe apparatus and method of its operation 审中-公开
标题翻译： MBE装置及其操作方法
公开(公告)号：JP2009124156A
公开(公告)日：2009-06-04
申请号：JP2008293886
申请日：2008-11-17
申请人： Createc Fischer & Co Gmbh , Forschungsverbund Berlin Ev , クレアテックフィッシャー・ウント・コー・ゲーエムベーハーCreaTec Fischer & Co. GmbH , フォルシュングスフェアブントベルリンエーファウForschungsverbund Berlin e.V.
发明人： SCHOENHERR HANS-PETER , FISCHER ALBRECHT
IPC分类号： H01L21/205
CPC分类号： C30B23/02 , C30B23/06 , C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： PROBLEM TO BE SOLVED: To provide a molecular beam epitaxy (MBE) apparatus which can discharge ammonia gas with high reliability and realizes reaction growth of a group III nitride compound semiconductor, and to provide a method of its operation.
SOLUTION: The molecular beam epitaxy (MBE) apparatus comprises: at least one electron beam source 11; a vacuum chamber 10 having at least one injector 12 to inject ammonia into the vacuum chamber 10; a first cold trap unit 20 having at least one cold trap 21 to condense excess ammonia; a pump unit 30 having at least one pump 31 to evacuate the chamber 10; and a barrier unit 40; where the barrier unit 40 can divide the first cold trap unit 20 from the vacuum chamber 10.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以高可靠性排放氨气并实现III族氮化物化合物半导体的反应生长的分子束外延（MBE）装置，并提供其操作方法。解决方案：分子束外延（MBE）装置包括：至少一个电子束源11; 具有至少一个喷射器12以将氨注入真空室10的真空室10; 具有至少一个冷阱21以冷凝多余氨的第一冷阱单元20; 泵单元30具有至少一个泵31以抽出腔室10; 和屏障单元40; 其中阻挡单元40可以将第一冷阱单元20与真空室10分开。版权所有：（C）2009，JPO＆INPIT

2. 发明专利

DE102007054851A1 未知
公开(公告)号：DE102007054851A1
公开(公告)日：2009-05-20
申请号：DE102007054851
申请日：2007-11-16
申请人： CREATEC FISCHER & CO GMBH , FORSCHUNGSVERBUND BERLIN EV
发明人： SCHOENHERR HANS-PETER , FISCHER ALBRECHT
IPC分类号： C30B25/14 , C23C16/455 , C30B29/40 , H01L21/205
摘要： The molecular beam epitaxy device for reactively depositing group III nitride compound semiconductor, comprises a vacuum chamber (10) having a molecular beam source (11) and an injector (12), which is arranged for injecting ammonia into the vacuum chamber, a first cooling trap device (20), which comprises a first cooling trap for condensing surplus ammonia and a second cooling trap, a pumping device (30) with a pump, which is arranged for evacuating the vacuum chamber, and a blocking device, with which the first cooling trap device is separatable from the vacuum chamber. The molecular beam epitaxy device for reactively depositing group III nitride compound semiconductor, comprises a vacuum chamber (10) having a molecular beam source (11) and an injector (12), which is arranged for injecting ammonia into the vacuum chamber, a first cooling trap device (20), which comprises a first cooling trap for condensing surplus ammonia and a second cooling trap, a pumping device (30) with a pump, which is arranged for evacuating the vacuum chamber, a blocking device, with which the first cooling trap device is separatable from the vacuum chamber, and a second cooling trap device (50) arranged for condensing residual gas in the vacuum chamber. The first and second cooling traps are arranged in separate vacuum connections between the vacuum chamber and the pumping device. The blocking device comprises two blocking elements, which are arranged between the vacuum chamber and the cooling traps. When one of the cooling traps is separated from the vacuum chamber by the blocking device, the other cooling trap is connected with the vacuum chamber. The cooling trap separated from the vacuum chamber is arranged for releasing the condensed ammonia. The cooling trap comprises a tubular baffle, which is arranged in the vacuum connection between the vacuum chamber and the pump, and a cooling shield, which is arranged in an additional vacuum chamber. The blocking element is arranged between the vacuum chamber and the additional vacuum chamber. The cooling trap is separately evacuatable from the vacuum chamber with a fore-pump of the pumping device and is connected with the fore-pump over a blockable bridging line. The second cooling trap device comprises a cooling shield, which is arranged in the vacuum chamber, and is interpreted for an operating temperature, in which ammonia remains in gaseous state under vacuum conditions and condenses the residual gas in the vacuum chamber. An independent claim is included for a method for operating a molecular beam epitaxy device.

3. 发明专利

CA2643960A1 MBE DEVICE AND METHOD FOR THE OPERATION THEREOF 未知
公开(公告)号：CA2643960A1
公开(公告)日：2009-05-16
申请号：CA2643960
申请日：2008-11-17
申请人： CREATEC FISCHER & CO GMBH , FORSCHUNGSVERBUND BERLIN EV
发明人： SCHOENHERR HANS-PETER , FISCHER ALBRECHT
IPC分类号： C30B25/14 , C30B29/38
摘要： A molecular beam epitaxy (MBE) device (100) which is designed for the reactive deposition of a group III nitride compound semiconductor comprises a vacuum chamber (10) which comprises at least one molecular beam source (11) and at least one injector (12) designed to inject ammonia into the vacuum chamber (10), a first cold trap device (20) comprising at least one cold trap (21, 22) designed to condense excess ammonia, a pump device (30) comprising at least one pump (31, 33, 35) designed to evacuate the vacuum chamber (10), and a barrier device (40), by means of which the first cold trap device (20) can be separated from the vacuum chamber (10). A method for operating an MBE device is also described.

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