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1. 发明申请

US20060076586A1 Virtual ground memory array and method therefor 有权
公开(公告)号：US20060076586A1
公开(公告)日：2006-04-13
申请号：US10961295
申请日：2004-10-08
申请人： Craig Swift , Gowrishankar Chindalore , Laureen Parker
发明人： Craig Swift , Gowrishankar Chindalore , Laureen Parker
IPC分类号： H01L29/772 , H01L21/8234
CPC分类号： H01L27/115 , H01L27/11521 , Y10S438/926 , Y10S438/962
摘要： A virtual ground memory array (VGA) is formed by a storage layer over a substrate with a conductive layer over the storage layer. The conductive layer is opened according to a patterned photoresist layer. The openings are implanted to form source/drain lines in the substrate, then filled with a layer of dielectric material. Chemical mechanical polishing (CMP) is then performed until the top of the conductive layer is exposed. This leaves dielectric spacers over the source/drain lines and conductive material between the dielectric spacers. Word lines are then formed over the conductive material and the dielectric spacers. As an alternative, instead of using a conductive layer, a sacrificial layer is used that is removed after the CMP step. After removing the sacrificial portions, the word lines are formed. In both cases, dielectric spacers reduce gate/drain capacitance and the distance from substrate to gate is held constant across the channel.

2. 发明申请

US20070058434A1 Nonvolatile memory cell programming 有权
标题翻译：非易失性存储单元编程
公开(公告)号：US20070058434A1
公开(公告)日：2007-03-15
申请号：US11209294
申请日：2005-08-23
申请人： Craig Cavins , Martin Niset , Laureen Parker
发明人： Craig Cavins , Martin Niset , Laureen Parker
IPC分类号： G11C16/04
CPC分类号： G11C16/0425 , G11C16/12
摘要： A method for programming a non-volatile memory (NVM) cell includes applying an increasing voltage to the current electrode that is used as a source during a read. The initial programming source voltage results in a relatively small number of electrons being injected into the storage layer. Because of the relatively low initial voltage level, the vertical field across the gate dielectric is reduced. The subsequent elevation of the source voltage does not raise the vertical field significantly due to the electrons in the storage layer establishing a field that reduces the vertical field. With less damage to the gate dielectric during programming, the endurance of the NVM cell is improved.
摘要翻译：一种用于对非易失性存储器（NVM）单元进行编程的方法包括：在读取期间向用作源的当前电极施加增加的电压。初始编程源电压导致相对少量的电子被注入到存储层中。由于初始电压电平相对较低，栅电介质的垂直场减小。由于存储层中的电子建立了减小垂直场的场，源电压的随后升高不会显着提高垂直场。在编程期间对栅极电介质的损害较小，NVM单元的耐久性得到改善。

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