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    • 6. 发明授权
    • System to implement a cross-bar switch of a broadband processor
    • US06378060B1
    • 2002-04-23
    • US09502856
    • 2000-02-11
    • Craig HansenBruce BatemanJohn Moussouris
    • Craig HansenBruce BatemanJohn Moussouris
    • G06F1300
    • G06F13/4022
    • The present invention provides a cross-bar circuit that implements a switch of a broadband processor. In an exemplary embodiment, the present invention provides a cross-bar circuit that, in response to partially-decoded instruction information and in response to datapath information, (1) allows any bit from a 2n-bit (e.g. 256-bit) input source word to be switched into any bit position of a 2m-bit (e.g. 128-bit) output destination word and (2) provides the ability to set-to-zero any bit in said 2m-bit output destination word. The cross-bar circuit includes: (1) a switch circuit which includes 2m 2n:1 multiplexor circuits, where each of the 2n:1 multiplexor circuits (a) has a unique n-bit (e.g. 8-bit) index input, one disable input, and a 2n-bit wide source input, (b) receives (i) an n-bit index at the n-bit index input, (ii) a disable bit at the disable input, and (iii) the 2n-bit input source word at the 2n-bit wide source input, and (c) decodes the n-bit index either (i) to select and output as an output destination bit one bit from the 2n-bit input source word if the disable bit has a logic low value or (ii) outputs a logic low as the output destination bit if the disable bit has a logic high value; (2) a cache memory that (a) has 2m cache datapath inputs and 2m cache index inputs, (b) receives (i) the datapath information on the 2m cache datapath inputs and (ii) 2m n-bit indexes on the 2m cache index inputs, (c) provides a first set of the n-bit indexes for the switch circuit, and (d) includes a small tightly coupled memory array that stores p (e.g. eight) entries of 2m n-bit indexes for the switch circuit, where the cache memory is logically coupled to the switch circuit; and (3) a control circuit that (a) has a plurality (e.g. 100) of control inputs, (b) receives the partially-decoded instruction information on the plurality of control inputs, (c) provides a second set of the n-bit indexes for the switch circuit, and (d) provides the disable bits for the switch circuit, where the control circuit is logically coupled to the switch circuit and to the cache memory.
    • 7. 发明授权
    • Memory array with local bitlines and local-to-global bitline pass gates and gain stages
    • 具有本地位线和本地到全局位线传递门​​和增益级的存储器阵列
    • US08891276B2
    • 2014-11-18
    • US13134579
    • 2011-06-10
    • Chang Hua SiauBruce Bateman
    • Chang Hua SiauBruce Bateman
    • G11C5/06G11C13/00G11C16/00G11C7/18G11C7/00
    • G11C5/06G11C7/00G11C7/18G11C13/0004G11C13/0007G11C13/0011G11C13/0026G11C16/00G11C2213/71
    • A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. Each local bitline is selectively coupled to an associated global bitline, by way of an associated local-to-global bitline pass gate. During a read operation when a memory element of a local bitline is selected to be read, a local-to-global gain stage is configured to amplify a signal on or passing through the local bitline to an amplified signal on or along an associated global bitline. The amplified signal, which in one embodiment is dependent on the resistive state of the selected memory element, is used to rapidly determine the memory state stored by the selected memory element.
    • 存储器阵列包括字线,本地位线,双端存储器元件,全局位线以及局部到全局位线传递门​​和增益级。 存储元件形成在字线和本地位线之间。 每个本地位线通过相关联的局部到全局位线传递门​​选择性地耦合到相关联的全局位线。 在选择本地位线的存储元件被读取的读取操作期间,局部到全局增益级被配置为将本地位线上的信号放大到相关联的全局位线上或沿相关联的全局位线 。 在一个实施例中放大的信号取决于所选择的存储器元件的电阻状态,被用于快速地确定由所选择的存储器元件存储的存储器状态。
    • 9. 发明申请
    • Memory array with local bitlines and local-to-global bitline pass gates and gain stages
    • 具有本地位线和本地到全局位线传递门​​和增益级的存储器阵列
    • US20120314468A1
    • 2012-12-13
    • US13134579
    • 2011-06-10
    • Chang Hua SiauBruce Bateman
    • Chang Hua SiauBruce Bateman
    • G11C5/06G11C5/08B82Y10/00
    • G11C5/06G11C7/00G11C7/18G11C13/0004G11C13/0007G11C13/0011G11C13/0026G11C16/00G11C2213/71
    • A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. Each local bitline is selectively coupled to an associated global bitline, by way of an associated local-to-global bitline pass gate. During a read operation when a memory element of a local bitline is selected to be read, a local-to-global gain stage is configured to amplify a signal on or passing through the local bitline to an amplified signal on or along an associated global bitline. The amplified signal, which in one embodiment is dependent on the resistive state of the selected memory element, is used to rapidly determine the memory state stored by the selected memory element.
    • 存储器阵列包括字线,本地位线,双端存储器元件,全局位线以及局部到全局位线传递门​​和增益级。 存储元件形成在字线和本地位线之间。 每个本地位线通过相关联的局部到全局位线传递门​​选择性地耦合到相关联的全局位线。 在选择本地位线的存储元件被读取的读取操作期间,局部到全局增益级被配置为将本地位线上的信号放大到相关联的全局位线上或沿相关联的全局位线 。 在一个实施例中放大的信号取决于所选择的存储器元件的电阻状态,被用于快速地确定由所选择的存储器元件存储的存储器状态。