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1. 发明申请

US20150306726A1 EDGE FINISHING APPARATUS 审中-公开
标题翻译：边缘整理设备
公开(公告)号：US20150306726A1
公开(公告)日：2015-10-29
申请号：US14793093
申请日：2015-07-07
申请人： Corning Incorporated
发明人： Charles Michael Darcangelo , Steven Edward DeMartino , Aric Bruce Shorey , Daniel Duane Strong , David Alan Tammaro , Butchi Reddy Vaddi
IPC分类号： B24B31/112 , B24B29/00 , B24B21/00 , B24B1/00 , B24B9/06
CPC分类号： B24B31/112 , B24B1/005 , B24B9/065 , B24B21/002 , B24B29/00 , B24B37/00
摘要： An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.
摘要翻译：边缘整理装置包括表面，流体输送装置，其构造成将至少一个磁流变抛光流体（MPF）带输送到至少一个阱，至少一个磁体，其邻近表面放置，以选择性地在附近施加磁场的至少一个保持器，所述至少一个保持器被配置为支撑至少一个物品，使得所述至少一个物品的边缘可以选择性地浸入被输送到所述至少一个物品的所述MPF带中至少一口井。

2. 发明授权

US10435796B2 Work piece including a sacrificial cover layer for laser drilling substrates 有权
公开(公告)号：US10435796B2
公开(公告)日：2019-10-08
申请号：US15672599
申请日：2017-08-09
申请人： CORNING INCORPORATED
发明人： Jeffrey John Domey , John Tyler Keech , Xinghua Li , Garrett Andrew Piech , Aric Bruce Shorey , Paul John Shustack , John Christopher Thomas
IPC分类号： B32B3/26 , B32B7/04 , B23B7/06 , B32B17/06 , C23F4/04 , C03B33/10 , H05K3/00 , C03B33/02 , B23K26/18 , B23K26/0622 , B23K26/386 , B23K26/40 , B23K26/382 , B23K103/00
摘要： A method for forming a plurality of precision holes in a substrate by drilling, including affixing a sacrificial cover layer to a surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location of one of the plurality of precision holes, forming a through hole in the sacrificial cover layer by repeatedly pulsing a laser beam at the predetermined location, and pulsing the laser beam into the through hole formed in the sacrificial cover layer. A work piece having precision holes including a substrate having the precision holes formed therein, wherein a longitudinal axis of each precision hole extends in a thickness direction of the substrate, and a sacrificial cover layer detachably affixed to a surface of the substrate, such that the sacrificial cover layer reduces irregularities of the precision holes.

3. 发明授权

US09707658B2 Edge finishing apparatus 有权
公开(公告)号：US09707658B2
公开(公告)日：2017-07-18
申请号：US14793093
申请日：2015-07-07
申请人： Corning Incorporated
发明人： Charles Michael Darcangelo , Steven Edward DeMartino , Aric Bruce Shorey , Daniel Duane Strong , David Alan Tammaro , Butchi Reddy Vaddi
IPC分类号： B24B31/112 , B24B29/00 , B24B21/00 , B24B1/00 , B24B9/06 , B24B37/00
CPC分类号： B24B31/112 , B24B1/005 , B24B9/065 , B24B21/002 , B24B29/00 , B24B37/00
摘要： An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

4. 发明申请

US20150190898A1 METHODS OF FINISHING AN EDGE OF A GLASS SHEET 审中-公开
标题翻译：完成玻璃片边缘的方法
公开(公告)号：US20150190898A1
公开(公告)日：2015-07-09
申请号：US14661421
申请日：2015-03-18
申请人： CORNING INCORPORATED
发明人： Charles Michael Darcangelo , Aric Bruce Shorey , Daniel Duane Strong , David Alan Tammaro
IPC分类号： B24B9/10 , B24B21/00
CPC分类号： B24B9/10 , B24B9/08 , B24B21/002
摘要： Methods of finishing an edge of a glass sheet comprise the step of machining the edge of the glass sheet into a predetermined cross-sectional profile along a plane taken transverse to the edge of the glass sheet with an initial average edge strength ESi. The methods also include the step of finishing the edge with at least one finishing member, such as an endless belt, without substantially changing a shape of the predetermined cross-sectional profile. In one example, a wet slurry including an abrasive can be applied to at least one of a finishing member and the edge of the glass sheet. After finishing the edge, example finished average edge strengths ESf can be at least about 250 MPa. In addition or alternatively, in another example, the ratio ESf/ESi can be within a range of from about 1.6 to about 5.6.
摘要翻译：完成玻璃板的边缘的方法包括将玻璃板的边缘沿着具有初始平均边缘强度ESi的横向于玻璃板的边缘的平面加工成预定的横截面轮廓的步骤。该方法还包括用至少一个精加工构件（例如环形带）来完成边缘的步骤，而基本上不改变预定横截面轮廓的形状。在一个实例中，包括研磨剂的湿浆料可以施加到精加工构件和玻璃板的边缘中的至少一个。完成边缘后，实例成品的平均边缘强度ESf可以至少为250MPa。另外或者在另一个实施例中，ESf / ESi比可以在约1.6至约5.6的范围内。

5. 发明授权

US10510576B2 Carrier-bonding methods and articles for semiconductor and interposer processing 有权
公开(公告)号：US10510576B2
公开(公告)日：2019-12-17
申请号：US14511411
申请日：2014-10-10
申请人： Corning Incorporated
发明人： Darwin Gene Enicks , John Tyler Keech , Aric Bruce Shorey , Windsor Pipes Thomas, III
IPC分类号： H01L21/48 , H01L23/00 , H01L23/15 , H01L21/683 , H01L23/498
摘要： A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.

6. 发明授权

US10134657B2 Inorganic wafer having through-holes attached to semiconductor wafer 有权
公开(公告)号：US10134657B2
公开(公告)日：2018-11-20
申请号：US15630363
申请日：2017-06-22
申请人： CORNING INCORPORATED
发明人： Daniel Wayne Levesque, Jr. , Garrett Andrew Piech , Aric Bruce Shorey
IPC分类号： H01L29/40 , H01L23/48 , H01L21/762 , H01L21/311 , H01L21/768 , H01L21/306 , H01L21/268 , H01L21/683 , B81B7/00 , B81C1/00
摘要： A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

7. 发明申请

US20140147623A1 Sacrificial Cover Layers for Laser Drilling Substrates and Methods Thereof 有权
标题翻译：激光钻孔基板牺牲盖层及其方法
公开(公告)号：US20140147623A1
公开(公告)日：2014-05-29
申请号：US14092536
申请日：2013-11-27
申请人： CORNING INCORPORATED
发明人： Aric Bruce Shorey , Garrett Andrew Piech , Xinghua Li , John Christopher Thomas , John Tyler Keech , Jeffrey John Domey , Paul John Shustack
IPC分类号： B23K26/38 , C23F4/04
CPC分类号： C23F4/04 , B23K26/0622 , B23K26/18 , B23K26/386 , B23K26/389 , B23K26/40 , B23K2103/50 , B23K2103/54 , C03B33/0222 , C03B33/102 , H05K3/0026 , Y10T428/24322
摘要： A method for forming a plurality of precision holes in a substrate by drilling, including affixing a sacrificial cover layer to a surface of the substrate, positioning a laser beam in a predetermined location relative to the substrate and corresponding to a desired location of one of the plurality of precision holes, forming a through hole in the sacrificial cover layer by repeatedly pulsing a laser beam at the predetermined location, and pulsing the laser beam into the through hole formed in the sacrificial cover layer. A work piece having precision holes including a substrate having the precision holes formed therein, wherein a longitudinal axis of each precision hole extends in a thickness direction of the substrate, and a sacrificial cover layer detachably affixed to a surface of the substrate, such that the sacrificial cover layer reduces irregularities of the precision holes.
摘要翻译：一种用于通过钻孔在基板中形成多个精密孔的方法，包括将牺牲覆盖层固定到基板的表面，将激光束相对于基板定位在预定位置，并且对应于多个精密孔，通过在预定位置重复地激励激光束在牺牲覆盖层中形成通孔，并将激光束脉冲到形成在牺牲覆盖层中的通孔中。一种具有精密孔的工件，包括其中形成有精密孔的基板，其中每个精密孔的纵轴在基板的厚度方向上延伸，并且牺牲盖层可拆卸地固定到基板的表面，使得牺牲覆盖层减少精密孔的不规则性。

8. 发明申请

US20190074240A1 INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20190074240A1
公开(公告)日：2019-03-07
申请号：US16179048
申请日：2018-11-02
申请人： CORNING INCORPORATED
发明人： Daniel Wayne Levesque, JR. , Garrett Andrew Piech , Aric Bruce Shorey
IPC分类号： H01L23/48 , H01L21/48 , H01L21/311 , B81B7/00 , B81C1/00 , H01L21/268 , H01L21/306 , H01L21/683 , H01L21/762 , H01L21/768 , H01L23/498
摘要： A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

9. 发明申请

US20180068868A1 ARTICLES HAVING HOLES WITH MORPHOLOGY ATTRIBUTES AND METHODS FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20180068868A1
公开(公告)日：2018-03-08
申请号：US15696736
申请日：2017-09-06
申请人： Corning Incorporated
发明人： Andres Covarrubias Jaramillo , Yuhui Jin , Frank Andrew Kramer, IV , Ekaterina Aleksandrovna Kuksenkova , Daniel Wayne Levesque, JR. , Garrett Andrew Piech , Aric Bruce Shorey , Robert Stephen Wagner
IPC分类号： H01L21/48 , C03C15/00 , C03C23/00 , H01L23/538 , H01L23/498
CPC分类号： H01L21/4807 , C03C15/00 , C03C23/0025 , H01L21/486 , H01L23/15 , H01L23/49827 , H01L23/49838 , H01L23/5384 , H01L23/5386 , H01L2224/16225
摘要： Articles including a glass-based substrate with holes, semiconductor packages including an article with holes, and methods of fabricating holes in a substrate are disclosed. In one embodiment, an article includes a glass-based substrate having a first surface, a second surface, and at least one hole extending from the first surface. The at least one hole has an interior wall having a surface roughness Ra that is less than or equal to 1 μm. The at least one hole has a first opening having a first diameter that is present the first surface. A first plane is defined by the first surface of the glass-based substrate based on an average thickness of the glass-based substrate. A ratio of a depression depth to the first diameter of the at least one hole is less than or equal to 0.007.

10. 发明申请

US20180005922A1 INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20180005922A1
公开(公告)日：2018-01-04
申请号：US15630363
申请日：2017-06-22
申请人： CORNING INCORPORATED
发明人： Daniel Wayne Levesque, JR. , Garrett Andrew Piech , Aric Bruce Shorey
IPC分类号： H01L23/48 , B81C1/00 , H01L21/268 , H01L21/683 , H01L21/311 , B81B7/00 , H01L21/762 , H01L21/768 , H01L21/306
CPC分类号： H01L23/481 , B81B7/0006 , B81B2207/096 , B81C1/00301 , B81C2201/013 , B81C2201/0143 , B81C2203/031 , H01L21/268 , H01L21/30604 , H01L21/31105 , H01L21/31111 , H01L21/486 , H01L21/6835 , H01L21/76251 , H01L21/76877 , H01L21/76898 , H01L23/49827 , H01L2221/68359
摘要： A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

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