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1. 发明授权

US4330796A Block readable charge coupled device 失效
标题翻译：可读电荷耦合器件
公开(公告)号：US4330796A
公开(公告)日：1982-05-18
申请号：US116686
申请日：1980-01-30
申请人： Constantine N. Anagnostopoulos , Teh-Hsuang Lee , Bruce C. Burkey , James P. Lavine
发明人： Constantine N. Anagnostopoulos , Teh-Hsuang Lee , Bruce C. Burkey , James P. Lavine
IPC分类号： H01L27/148 , H04N5/3728 , H04N5/376 , H04N5/378 , H04N3/14
CPC分类号： H04N3/1537 , H01L27/14831 , Y10S358/906
摘要： In accordance with the present invention, a conventional area image sensor of the interline transfer type is so configured as to be readable in blocks of adjacent photosite rows, thereby enabling the modified sensor to be read out at fast frame rates. The resulting sensor, although designed for block readout, can be produced using conventional manufacturing processes.
摘要翻译：根据本发明，行间传输类型的常规区域图像传感器被配置为在相邻的光子行的块中是可读的，从而能够以快速帧速率读出修改的传感器。所得到的传感器虽然设计用于块读出，但可以使用传统的制造工艺来生产。

2. 发明授权

US5448089A Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range 失效
标题翻译：电荷耦合器件在宽温度范围内具有改善的电荷转移效率
公开(公告)号：US5448089A
公开(公告)日：1995-09-05
申请号：US219758
申请日：1994-03-29
申请人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
发明人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H01L29/10 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device.
摘要翻译：一种电荷耦合器件，其在宽温度范围内具有改善的电荷转移效率。该器件包括一种导电类型的半导体材料的衬底; 形成在所述基板中并且与所述基板相反的导电类型的第一埋入通道; 导电类型的第二掩埋沟道，其形成在与所述第一掩埋沟道相同的衬底区域中，并且比所述第一掩埋沟道具有比所述衬底更大的穿透深度; 在掩埋沟道中间隔地形成的补偿区域提供了一种用于容纳单独的电荷包并且被成形为用于诱导窄通道效应并用于在未补偿的掩埋沟道区域中的电荷转移方向上产生边缘电场的装置; 与设备中的每对相邻补偿和未补偿区域相关联的电极门; 以及用于使电极计时以使一串电荷包通过该装置传送的装置。

3. 发明授权

US5859462A Photogenerated carrier collection of a solid state image sensor array 失效
标题翻译：固态图像传感器阵列的光生载体收集
公开(公告)号：US5859462A
公开(公告)日：1999-01-12
申请号：US837077
申请日：1997-04-11
申请人： Timothy J. Tredwell , Teh H. Lee , James P. Lavine
发明人： Timothy J. Tredwell , Teh H. Lee , James P. Lavine
IPC分类号： H01L27/146 , H01L27/148 , H01L31/0352 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14806 , H01L31/035272
摘要： An image sensor comprising a semiconductor of a first conductivity type having a plurality of pixels formed thereon; and a region heavily doped with the first conductivity type semiconductor beneath the pixels formed such that there is a gradient formed within the semiconductor below the pixels that is capable of directing photogenerated electrons toward the pixels and away from the heavily doped region. The gradient is formed by having a more lightly doped layer formed upon the heavily doped layer and allowing a gradient to from around the junction of the two layers.
摘要翻译：一种图像传感器，包括其上形成有多个像素的第一导电类型的半导体; 以及在像素的下面重要掺杂有第一导电类型半导体的区域，使得在能够将光生电子导向像素并远离重掺杂区域的像素之下形成有半导体。该梯度是通过在重掺杂层上形成更轻的掺杂层并允许从两层的结的周围的梯度形成的。

4. 发明授权

US07973836B2 Camera, image sensor, and method for decreasing undesirable dark current 有权
标题翻译：相机，图像传感器和减少不良暗电流的方法
公开(公告)号：US07973836B2
公开(公告)日：2011-07-05
申请号：US10975865
申请日：2004-10-28
申请人： R. Daniel McGrath , Edward T. Nelson , Robert M. Guidash , Charles V. Stancampiano , James P. Lavine
发明人： R. Daniel McGrath , Edward T. Nelson , Robert M. Guidash , Charles V. Stancampiano , James P. Lavine
IPC分类号： H04N9/64 , H01L31/102
CPC分类号： H04N5/361 , H01L27/14601 , H01L27/14643
摘要： A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.
摘要翻译：一种用于降低图像传感器像素中的暗电流的方法，所述方法包括以下步骤：提供用于接收转换成电荷的入射光的光敏区域; 提供用于从感光区域传送电荷的门; 其中所述栅极被保持在将在用于感光区域的集成期间在半导体 - 介电界面处将累积多数载流子的电压。或者，可以在栅极下方提供电位分布以将暗电流排出远离光生扩散。

5. 发明授权

US07126638B2 Image sensor having multiple layers of dielectrics adjacent the photosensitive area for improved quantum efficiency 有权
标题翻译：图像传感器具有与感光区域相邻的多层电介质，以提高量子效率
公开(公告)号：US07126638B2
公开(公告)日：2006-10-24
申请号：US10142301
申请日：2002-05-09
申请人： Christopher Parks , James P. Lavine
发明人： Christopher Parks , James P. Lavine
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14625 , H01L27/14627
摘要： An image sensor for capturing an image includes a photosensitive area for receiving incident light; a substance placed covering a portion of the photosensitive area which substance includes a first index of refraction; and a plurality of electrodes positioned adjacent the substance having a dielectric placed between a portion of the electrodes, which dielectric includes a second index of refraction lower than the first index of refraction.
摘要翻译：用于捕获图像的图像传感器包括用于接收入射光的光敏区域; 放置的物质覆盖感光区域的一部分，该物质包括第一折射率; 以及多个电极，其位于所述物质附近，所述电极位于所述电极的一部分之间，所述电介质包括比所述第一折射率低的第二折射率。

6. 发明授权

US4613402A Method of making edge-aligned implants and electrodes therefor 失效
标题翻译：制造边缘对准植入物和电极的方法
公开(公告)号：US4613402A
公开(公告)日：1986-09-23
申请号：US750204
申请日：1985-07-01
申请人： David L. Losee , James P. Lavine
发明人： David L. Losee , James P. Lavine
IPC分类号： H01L29/762 , H01L21/339 , H01L21/8234 , H01L27/14 , H01L27/148 , H01L29/76 , H01L29/772 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L29/66954 , H01L21/823406
摘要： There is disclosed a process particularly suited for making CCD's. The process comprises the steps of(a) depositing a layer of conductive material above a semiconductor substrate;(b) forming a patterned mask above the conductive layer, the pattern exposing spaced-apart strip portions of the conductive layer;(c) ion-implanting dopant strips into the substrate through the conductive layer strip portions exposed by the patterned mask;(d) removing a portion of the mask but retaining the rest so as to expose the conductive layer over first portions of the substrate that contain an implanted dopant strip and over portions of the substrate adjacent to the first portions;(e) forming on the conductive layer between the retained mask portions, and above the implanted dopant strips, strips of a material resistant to an etchant for the conductive material;(f) removing the retained mask portions; and(g) etching away the conductive layer where the latter is not covered with the etchant-resistant material so as to leave conductive strips overlying the implanted strips.
摘要翻译：公开了一种特别适用于制造CCD的工艺。该方法包括以下步骤：（a）在半导体衬底上沉积导电材料层; （b）在所述导电层上方形成图案化掩模，所述图案暴露所述导电层的间隔开的条带部分; （c）通过由图案化掩模暴露的导电层条带部分将掺杂剂条带离子注入到衬底中; （d）去除所述掩模的一部分，但保留其余部分，以使所述导电层暴露于所述衬底的第一部分上，所述第一部分包含注入的掺杂剂条和所述衬底的与所述第一部分相邻的部分; （e）在所述保护的掩模部分之间和所述注入的掺杂剂条带之上的所述导电层上形成耐导电材料的蚀刻剂的材料条; （f）去除保留的掩模部分; 并且（g）蚀刻掉导电层，其中后者不被耐蚀刻材料覆盖，以便留下覆盖在植入条上的导电条。

7. 发明授权

US07776638B2 Two epitaxial layers to reduce crosstalk in an image sensor 有权
标题翻译：两个外延层，以减少图像传感器中的串扰
公开(公告)号：US07776638B2
公开(公告)日：2010-08-17
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

8. 发明授权

US07095066B2 Process for making a CMOS image sensor 有权
公开(公告)号：US07095066B2
公开(公告)日：2006-08-22
申请号：US10753246
申请日：2004-01-08
申请人： James P. Lavine
发明人： James P. Lavine
IPC分类号： H01L31/062
CPC分类号： H01L27/14687 , H01L27/14632
摘要： An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.

9. 发明授权

US5583071A Image sensor with improved output region for superior charge transfer characteristics 失效
公开(公告)号：US5583071A
公开(公告)日：1996-12-10
申请号：US489599
申请日：1995-06-12
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378 , H01L27/14
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.

10. 发明授权

US5514886A Image sensor with improved output region for superior charge transfer characteristics 失效
标题翻译：图像传感器具有改进的输出区域，具有出色的电荷转移特性
公开(公告)号：US5514886A
公开(公告)日：1996-05-07
申请号：US374280
申请日：1995-01-18
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.
摘要翻译：新的CCD输出区域提供了在其输出端减小宽CCD的宽度以维持高灵敏度输出节点而不牺牲电荷传输效率的方法。阻挡区域的形状使得CCD的“通道宽度”朝向输出门的输入边缘增加。因此，阻挡区域的宽度朝向多相设备的最终CCD相的输出端减小。此外，输出栅极下的沟道宽度朝向浮动扩散或检测节点的电荷转移方向朝向其输出端减小。由于最后CCD相位下的阻挡区域的“成形”部分可以通过与正常形状的阻挡区域相同的工艺步骤形成，所以可以形成这种结构，而不需要额外的掩模和注入步骤。与现有技术相比，该结构的优点是改进的电荷转移特性，而不需要额外的工艺步骤。

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