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    • 4. 发明专利
    • Deposited film deposition apparatus
    • 沉积膜沉积装置
    • JP2006169558A
    • 2006-06-29
    • JP2004360493
    • 2004-12-13
    • Cnk:KkJtekt Corp株式会社Cnk株式会社ジェイテクト
    • ANDO JUNJIONO AKIHIROSAKAI TOSHIBUMIFUJIWARA FUSAMITSUHASHITOMI HIROYUKI
    • C23C16/50
    • PROBLEM TO BE SOLVED: To provide a deposited film deposition apparatus capable of mitigating non-uniformity of the thickness of a deposited film.
      SOLUTION: The deposited film deposition apparatus deposits a deposited film on a surface of a conductive work 22 by the plasma CVD method, and is provided with a film deposition furnace 11, an anode member 1 which is located within the film deposition furnace 11 and equipotential to the film deposition furnace 11, a work holding means 20 which holds a plate-shaped work 22 in the circumferential direction around the anode member 1, and is connected to a negative pole, gas nozzles 23, 33 to feed treatment gas, and a plasma power supply 16 connected to at least the work holding means 20. Preferably, the film deposition furnace 11 is provided with a cylindrical part, and the anode member 1 is coaxially arranged with the film deposition furnace 11, and columnar in shape.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供能够减轻沉积膜的厚度不均匀性的沉积膜沉积设备。 解决方案:沉积膜沉积设备通过等离子体CVD法将沉积的膜沉积在导电工件22的表面上,并且设置有成膜炉11,位于成膜炉内的阳极部件1 11并且与成膜炉11等电位的工件保持装置20,其围绕阳极构件1沿圆周方向保持板状工件22,并连接到负极,气体喷嘴23,33以将处理气体 以及与至少工件保持机构20连接的等离子体电源16.优选地,成膜炉11设置有圆筒部,阳极部件1与成膜炉11同轴配置,柱状形状 。 版权所有(C)2006,JPO&NCIPI