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1. 发明授权

US07986833B2 Image processing method and apparatus for color enhancement and correction 有权
标题翻译：用于颜色增强和校正的图像处理方法和装置
公开(公告)号：US07986833B2
公开(公告)日：2011-07-26
申请号：US11436173
申请日：2006-05-18
申请人： Chung-Li Shen , Yu-Shan Hsu
发明人： Chung-Li Shen , Yu-Shan Hsu
IPC分类号： G06K9/00 , G06K9/46 , G06K9/66 , G06K9/40
CPC分类号： H04N1/62 , H04N1/6058 , H04N1/628
摘要： An image processing method and an image processing apparatus for color correction are provided. The image processing method for color correction comprises the steps of: (a) determining an angle on a color space according to an image data of a basic color, (b) determining a first straight line on the color space according to the angle, (c) determining a second straight line on the color space according to an image data of a pixel, wherein the second straight line is parallel to the first straight line, (d) calculating a distance between the second straight line and the first straight line in order to obtain a color intensity difference value, (e) correcting the image data of the pixel according to the color intensity difference.
摘要翻译：提供了一种用于颜色校正的图像处理方法和图像处理装置。用于颜色校正的图像处理方法包括以下步骤：（a）根据基本颜色的图像数据确定颜色空间上的角度，（b）根据角度确定颜色空间上的第一直线， c）根据像素的图像数据确定颜色空间上的第二直线，其中第二直线平行于第一直线，（d）计算第二直线与第一直线之间的距离，以获得颜色强度差值，（e）根据颜色强度差校正像素的图像数据。

2. 发明申请

US20070115518A1 Image processing method and apparatus for color enhancement and correction 有权
标题翻译：用于颜色增强和校正的图像处理方法和装置
公开(公告)号：US20070115518A1
公开(公告)日：2007-05-24
申请号：US11436173
申请日：2006-05-18
申请人： Chung-Li Shen , Yu-Shan Hsu
发明人： Chung-Li Shen , Yu-Shan Hsu
IPC分类号： G03F3/08
CPC分类号： H04N1/62 , H04N1/6058 , H04N1/628
摘要： The present invention provides an image processing method for color correction. The image processing method for color correction comprises the steps of: (a) determining an angle on a color space according to an image data of a basic color, (b) determining a first straight line on the color space according to the angle, wherein the first straight line makes the same angle with the color space, (c) determining a second straight line on the color space according to an image data of a pixel and the angle, wherein the slope of the second straight line is the same to that of the first straight line, (d) providing a processing range parameter and according to the processing range parameter, determining a third straight line and a fourth straight line of two color correction range lines which are parallel to the first straight line, wherein the first straight line is a center line between the third straight line and the fourth straight line, (e) determining at least one another color correction range bounded line according to the processing range parameter and dividing several regions among the color correction range bounded line, the third straight line, and the fourth straight line, wherein every region respectively corresponds to a correction value, (f) determining the color intensity difference value according to the correction value corresponding to the region on which the image data of the pixel is located, and (g) correcting the image data of the pixel according to the color intensity difference value.
摘要翻译：本发明提供了一种用于颜色校正的图像处理方法。用于颜色校正的图像处理方法包括以下步骤：（a）根据基本颜色的图像数据确定颜色空间上的角度，（b）根据角度确定颜色空间上的第一直线，其中第一直线与颜色空间形成相同的角度，（c）根据像素的图像数据和角度确定颜色空间上的第二直线，其中第二直线的斜率与第二直线的斜率相同（d）提供处理范围参数并根据处理范围参数确定与第一直线平行的两个颜色校正范围线的第三直线和第四直线，其中第一直线直线是第三直线和第四直线之间的中心线，（e）根据处理范围参数确定至少另一个颜色校正范围有界线，并且将第在颜色校正范围有界线，第三直线和第四直线中的每个区域分别对应于校正值，（f）根据对应于该区域的校正值来确定色强差值所述像素的图像数据位于所述图像数据上，并且（g）根据所述颜色强度差值校正所述像素的图像数据。

3. 发明申请

US20100243430A1 Apparatus and method for magnetic field assisted electrochemical discharge machining 有权
标题翻译：用于磁场辅助电化学放电加工的设备和方法
公开(公告)号：US20100243430A1
公开(公告)日：2010-09-30
申请号：US12460947
申请日：2009-07-27
申请人： Biing-Hwa Yan , Chih-Ping Cheng , Kun-Ling Wu , Yu-Shan Hsu
发明人： Biing-Hwa Yan , Chih-Ping Cheng , Kun-Ling Wu , Yu-Shan Hsu
IPC分类号： C25F3/02
CPC分类号： B23H7/38 , B23H3/00 , B23H5/06
摘要： In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining.
摘要翻译：在用于磁场辅助电化学放电加工（ECDM）的设备和方法中，利用磁流体动力学（MHD）效应来提高气泡膜和电解质循环的厚度，从而提高加工精度和效率。由于磁场中的带电离子是由洛伦茨力驱动的，所以在ECDM工艺中产生的电解气泡在其表面上充满了带电离子，电解气泡可以被迫沿磁场方向移动，需要机械扰动。本发明可广泛应用于不同尺寸和形状的非导电脆性材料的微加工，包括在生物芯片上形成微通道和微孔，以及在微光电机械系统（MOEMS）和各种微加工领域。加工表面光滑，不需要第二次加工。

4. 发明申请

US20130193511A1 VERTICAL TRANSISTOR STRUCTURE 审中-公开
标题翻译：垂直晶体管结构
公开(公告)号：US20130193511A1
公开(公告)日：2013-08-01
申请号：US13358823
申请日：2012-01-26
申请人： Hsuan-Yu FANG , Wei-Chih Liu , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang , Kazuaki Takesako , Tomohiro Kadoya , Wen Kuei Hsu , Hirotake Fujita , Yukihiro Nagai , Chih-Wei Hsiung , Yoshinori Tanaka
发明人： Hsuan-Yu FANG , Wei-Chih Liu , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang , Kazuaki Takesako , Tomohiro Kadoya , Wen Kuei Hsu , Hirotake Fujita , Yukihiro Nagai , Chih-Wei Hsiung , Yoshinori Tanaka
IPC分类号： H01L27/088
CPC分类号： H01L29/7827 , H01L29/4236 , H01L29/66666
摘要： A vertical transistor structure comprises a substrate, a plurality of pillars formed on the substrate and spaced from each other, a plurality of trenches each formed between two adjacent pillars, a protection layer formed on the surface of a first side wall and the surface of a second side wall of the trench, a first gate and a second gate respectively formed on the protection layer of the first side wall and the second side wall, and a separation layer covering a bottom wall of the trench. The present invention uses the separation layer functioning as an etch stopping layer to the first gate and the second gate while being etched. Further, thickness of the separation layer is used to control the distance between the bottom wall and the first and second gates and define widths of the drain and the source formed in the pillar via ion implantation.
摘要翻译：垂直晶体管结构包括基板，形成在基板上并彼此间隔开的多个柱，每个形成在两个相邻柱之间的多个沟槽，形成在第一侧壁的表面上的保护层和沟槽的第二侧壁，分别形成在第一侧壁和第二侧壁的保护层上的第一栅极和第二栅极以及覆盖沟槽底壁的分离层。本发明在蚀刻时使用用作蚀刻停止层的分离层到第一栅极和第二栅极。此外，分离层的厚度用于控制底壁和第一和第二栅极之间的距离，并且通过离子注入限定在柱中形成的漏极和源极的宽度。

5. 发明授权

US08956961B2 Semiconductor device and method for making the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08956961B2
公开(公告)日：2015-02-17
申请号：US13415959
申请日：2012-03-09
申请人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
发明人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
IPC分类号： H01L21/02
CPC分类号： H01L21/2257 , H01L21/2236 , H01L27/10823 , H01L27/10876 , H01L27/10885 , H01L29/41741 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.
摘要翻译：半导体器件包括：具有基底和从基底延伸的半导体柱阵列的衬底，衬底形成有多个沟槽，每个沟槽延伸到衬底中并且具有两个相对的沟槽侧壁; 第一绝缘衬垫层，其形成在每个沟槽的每个沟槽侧壁上，并且通过间隙留下每个沟槽侧壁的位形成表面，该间隙未被第一绝缘衬垫层覆盖; 以及多个掩埋位线，每个埋入位线从每个沟槽的相应一个沟槽侧壁的位形成表面延伸到基座中。

6. 发明授权

US08743172B2 Image capturing for video conference system 有权
标题翻译：视频会议系统的图像捕获
公开(公告)号：US08743172B2
公开(公告)日：2014-06-03
申请号：US13542626
申请日：2012-07-05
申请人： Chia-Yuan Chang , Chih-Wei Sung , Juin-Yi Huang , Yu-Shan Hsu , Ting-Han Huang , Tong-Ming Hsu , Wan-Chi Liu
发明人： Chia-Yuan Chang , Chih-Wei Sung , Juin-Yi Huang , Yu-Shan Hsu , Ting-Han Huang , Tong-Ming Hsu , Wan-Chi Liu
IPC分类号： H04N7/15
CPC分类号： H04N7/15 , H04N7/147 , H04N7/148
摘要： A video conference system built in an internet protocol (IP) network is provided. The system has a multimedia capturing unit, a DECT telephone, and a video conference terminal apparatus. The DECT telephone is utilized to perform video conferencing with the video conference terminal apparatus by receiving and transmitting sounds. The DECT telephone is further utilized to control the video conference terminal apparatus to capture a target image in the video signals from other users in the video conference. The video conference terminal apparatus updates the phonebook image in the phonebook database thereof with the target image.
摘要翻译：提供了内置在互联网协议（IP）网络中的视频会议系统。该系统具有多媒体捕获单元，DECT电话和视频会议终端设备。 DECT电话用于通过接收和发送声音与视频会议终端设备进行视频会议。 DECT电话机进一步用于控制视频会议终端设备在视频会议中从其他用户的视频信号中捕获目标图像。视频会议终端装置利用目标图像更新其电话簿数据库中的电话簿图像。

7. 发明授权

US08652307B2 Apparatus and method for magnetic field assisted electrochemical discharge machining 有权
标题翻译：用于磁场辅助电化学放电加工的设备和方法
公开(公告)号：US08652307B2
公开(公告)日：2014-02-18
申请号：US12460947
申请日：2009-07-27
申请人： Biing-Hwa Yan , Chh-Ping Cheng , Kun-Ling Wu , Yu-Shan Hsu
发明人： Biing-Hwa Yan , Chh-Ping Cheng , Kun-Ling Wu , Yu-Shan Hsu
IPC分类号： B23H7/38 , B23H5/02
CPC分类号： B23H7/38 , B23H3/00 , B23H5/06
摘要： In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining.
摘要翻译：在用于磁场辅助电化学放电加工（ECDM）的设备和方法中，利用磁流体动力学（MHD）效应来提高气泡膜和电解质循环的厚度，从而提高加工精度和效率。由于磁场中的带电离子是由洛伦茨力驱动的，所以在ECDM工艺中产生的电解气泡在其表面上充满了带电离子，电解气泡可以被迫沿磁场方向移动，需要机械扰动。本发明可广泛应用于不同尺寸和形状的非导电脆性材料的微加工，包括在生物芯片上形成微通道和微孔，以及在微光电机械系统（MOEMS）和各种微加工领域。加工表面光滑，不需要第二次加工。

8. 发明申请

US20130234230A1 Semiconductor Device and Method for Making the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130234230A1
公开(公告)日：2013-09-12
申请号：US13415959
申请日：2012-03-09
申请人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
发明人： Kazuaki Takesako , Wen-Kuei Hsu , Yoshinori Tanaka , Yukihiro Nagai , Chih-Wei Hsiung , Hirotake Fujita , Tomohiro Kadoya , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Chung-Yung Ai , Yu-Shan Hsu , Wei-Che Chang , Chun-Hua Huang
IPC分类号： H01L27/105 , H01L21/225
CPC分类号： H01L21/2257 , H01L21/2236 , H01L27/10823 , H01L27/10876 , H01L27/10885 , H01L29/41741 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.
摘要翻译：半导体器件包括：具有基底和从基底延伸的半导体柱阵列的衬底，衬底形成有多个沟槽，每个沟槽延伸到衬底中并且具有两个相对的沟槽侧壁; 第一绝缘衬垫层，其形成在每个沟槽的每个沟槽侧壁上，并且通过间隙留下每个沟槽侧壁的位形成表面，该间隙未被第一绝缘衬垫层覆盖; 以及多个掩埋位线，每个埋入位线从每个沟槽的相应一个沟槽侧壁的位形成表面延伸到基座中。

9. 发明申请

US20130157454A1 SELF-ALIGNED WET ETCHING PROCESS 有权
标题翻译：自对准湿蚀刻过程
公开(公告)号：US20130157454A1
公开(公告)日：2013-06-20
申请号：US13327157
申请日：2011-12-15
申请人： Wei-Che CHANG , Chun-Hua Huang , Chung-Yung Ai , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Yu-Shan Hsu , Kazuaki Takesako , Hirotake Fujita , Tomohiro Kadoya , Wen Kuei Hsu , Chih-Wei Hsiung , Yukihiro Nagai , Yoshinori Tanaka
发明人： Wei-Che CHANG , Chun-Hua Huang , Chung-Yung Ai , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Yu-Shan Hsu , Kazuaki Takesako , Hirotake Fujita , Tomohiro Kadoya , Wen Kuei Hsu , Chih-Wei Hsiung , Yukihiro Nagai , Yoshinori Tanaka
IPC分类号： H01L21/28
CPC分类号： H01L29/66666 , H01L27/10876
摘要： A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.
摘要翻译：自对准湿蚀刻工艺包括以下步骤：在其表面上蚀刻具有蚀刻保护层的衬底，以形成彼此间隔开的多个沟槽; 并且在每个沟槽中依次形成绝缘层，蚀刻停止层和初级绝缘体，其中所述初级绝缘体填充在由所述蚀刻停止层包围的容纳空间的内部。在湿蚀刻工艺期间，蚀刻停止层保护初级绝缘体不被蚀刻，从而实现各向异性湿蚀刻。此外，本发明扩大了与外部电路电连接的接触面积，并且免除了形成在接触区域上的电接触器由于过度蚀刻初级绝缘体而引起的短路。

10. 发明授权

US08461056B1 Self-aligned wet etching process 有权
标题翻译：自对准湿法蚀刻工艺
公开(公告)号：US08461056B1
公开(公告)日：2013-06-11
申请号：US13327157
申请日：2011-12-15
申请人： Wei-Che Chang , Chun-Hua Huang , Chung-Yung Ai , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Yu-Shan Hsu , Kazuaki Takesako , Hirotake Fujita , Tomohiro Kadoya , Wen Kuei Hsu , Chih-Wei Hsiung , Yukihiro Nagai , Yoshinori Tanaka
发明人： Wei-Che Chang , Chun-Hua Huang , Chung-Yung Ai , Wei-Chih Liu , Hsuan-Yu Fang , Yu-Ling Huang , Meng-Hsien Chen , Chun-Chiao Tseng , Yu-Shan Hsu , Kazuaki Takesako , Hirotake Fujita , Tomohiro Kadoya , Wen Kuei Hsu , Chih-Wei Hsiung , Yukihiro Nagai , Yoshinori Tanaka
IPC分类号： H01L21/302
CPC分类号： H01L29/66666 , H01L27/10876
摘要： A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.
摘要翻译：自对准湿蚀刻工艺包括以下步骤：在其表面上蚀刻具有蚀刻保护层的衬底，以形成彼此间隔开的多个沟槽; 并且在每个沟槽中依次形成绝缘层，蚀刻停止层和初级绝缘体，其中所述初级绝缘体填充在由所述蚀刻停止层包围的容纳空间的内部。在湿蚀刻工艺期间，蚀刻停止层保护初级绝缘体不被蚀刻，从而实现各向异性湿蚀刻。此外，本发明扩大了与外部电路电连接的接触面积，并且免除了形成在接触区域上的电接触器由于过度蚀刻初级绝缘体而引起的短路。

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