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1. 发明申请

US20070054471A1 ALIGNMENT MARK AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：对准标记及其形成方法
公开(公告)号：US20070054471A1
公开(公告)日：2007-03-08
申请号：US11162034
申请日：2005-08-26
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung
IPC分类号： H01L21/00
CPC分类号： H01L23/544 , G03F9/7076 , H01L21/31604 , H01L2223/5442 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark is fabricated containing a mark portion and a trench structure. The trench structure surrounds the mark portion and is at a distance from the mark portion. The mark portion has a plurality of notches. Due to the erosion effect caused by the trench structure, it can prevent the residue leave in the notches of the alignment mark.
摘要翻译：制造包含标记部分和沟槽结构的对准标记。沟槽结构围绕标记部分并且距标记部分一定距离。标记部分具有多个凹口。由于沟槽结构引起的侵蚀效应，可以防止残留物留在对准标记的凹口中。

2. 发明授权

US07544618B2 Two-step chemical mechanical polishing process 有权
标题翻译：两步化学机械抛光工艺
公开(公告)号：US07544618B2
公开(公告)日：2009-06-09
申请号：US11419129
申请日：2006-05-18
申请人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
发明人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , H01L22/12 , H01L22/20
摘要： A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
摘要翻译：公开了一种化学机械抛光方法。该方法包括在其上具有至少一个沟槽结构的晶片上形成膜; 通过提供抛光组合物来抛光膜的表面以提供第一抛光表面; 用漂洗组合物漂洗第一抛光表面以提供漂洗表面; 并通过提供第二抛光组合物来抛光冲洗的表面以提供第二抛光表面。

3. 发明授权

US07361601B2 Chemical mechanical polish process and method for improving accuracy of determining polish endpoint thereof 有权
标题翻译：化学机械抛光工艺和提高确定其抛光终点的准确性的方法
公开(公告)号：US07361601B2
公开(公告)日：2008-04-22
申请号：US11160357
申请日：2005-06-21
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
IPC分类号： H01L21/461
CPC分类号： B24B37/013 , B24B49/12 , H01L22/26
摘要： A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.
摘要翻译：提供了一种提高化学机械抛光（CMP）工艺抛光终点确定精度的方法。该方法在CMP过程之前执行。首先，提供具有待抛光层的测试晶片和待抛光层下面的材料层。然后，提供具有波长的测试光束以照射测试晶片。对测试晶片执行CMP处理以除去待抛光层，直到材料层暴露，同时连续检测在抛光过程期间测试光束的反射。当待抛光层被完全去除并且当CMP工艺到达待抛光层和材料层之间的界面时，检测反射趋势。如果反射趋势逐渐减弱，则选择具有波长的测试光束用于随后的抛光过程。

4. 发明申请

US20070269985A1 TWO-STEP CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：两步化学机械抛光工艺
公开(公告)号：US20070269985A1
公开(公告)日：2007-11-22
申请号：US11419129
申请日：2006-05-18
申请人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
发明人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , H01L22/12 , H01L22/20
摘要： A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
摘要翻译：公开了一种化学机械抛光方法。该方法包括在其上具有至少一个沟槽结构的晶片上形成膜; 通过提供抛光组合物来抛光膜的表面以提供第一抛光表面; 用漂洗组合物漂洗第一抛光表面以提供漂洗表面; 并通过提供第二抛光组合物来抛光冲洗的表面以提供第二抛光表面。

5. 发明申请

US20060283838A1 CHEMICAL MECHANICAL POLISH PROCESS AND METHOD FOR IMPROVING ACCURACY OF DETERMINING POLISH ENDPOINT THEREOF 有权
标题翻译：化学机械抛光工艺及其提高确定其抛光端点精度的方法
公开(公告)号：US20060283838A1
公开(公告)日：2006-12-21
申请号：US11160357
申请日：2005-06-21
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
IPC分类号： B44C1/22 , H01L21/461 , H01L21/302 , C03C15/00
CPC分类号： B24B37/013 , B24B49/12 , H01L22/26
摘要： A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.
摘要翻译：提供了一种提高化学机械抛光（CMP）工艺抛光终点确定精度的方法。该方法在CMP过程之前执行。首先，提供具有待抛光层的测试晶片和待抛光层下面的材料层。然后，提供具有波长的测试光束以照射测试晶片。对测试晶片执行CMP处理以除去待抛光层，直到材料层暴露，同时连续检测在抛光过程期间测试光束的反射。当待抛光层被完全去除并且当CMP工艺到达待抛光层和材料层之间的界面时，检测反射趋势。如果反射趋势逐渐减弱，则选择具有波长的测试光束用于随后的抛光过程。

6. 发明授权

US06565705B2 Wafer carrier used for chemical mechanic polishing 有权
公开(公告)号：US06565705B2
公开(公告)日：2003-05-20
申请号：US10050019
申请日：2002-01-15
申请人： Yung-Tai Hung , Chi-Tung Huang
发明人： Yung-Tai Hung , Chi-Tung Huang
IPC分类号： B24B2118
CPC分类号： B24B37/32 , B24B53/017 , H01L21/30625
摘要： A wafer carrier used for a chemical mechanical device has a polishing head and a pad conditioner. The polishing head has a retainer ring secured to a bottom of the polishing head to hold a wafer. The pad conditioner can be fixed on a surface of the retainer ring, attached to side surfaces of the retainer ring, or embedded in the retainer ring, such that the pad conditioner and the polishing head can be integrally formed.

7. 发明授权

US07071102B2 Method of forming a metal silicide layer on non-planar-topography polysilicon 有权
标题翻译：在非平面地形多晶硅上形成金属硅化物层的方法
公开(公告)号：US07071102B2
公开(公告)日：2006-07-04
申请号：US10752276
申请日：2004-01-06
申请人： Chi-Tung Huang
发明人： Chi-Tung Huang
IPC分类号： H01L21/4763
CPC分类号： C23C14/046 , C23C14/165 , C23C14/3492 , C23C14/358 , C23C14/5806 , C23C14/5873 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A process is described for creating a uniformly thick layer of titanium, cobalt, or nickel silicide over a layer of polysilicon that has features or a non-planar topography. A dual layer of metal is deposited onto patterned polysilicon such that the first layer covers the bottoms and tops of the non-planar topography and the second layer covers the sidewalls and tops of the non-planar topography. By heating the metal, etching away any un-reacted metal, and heating the result a second time, a metal silicide layer of uniform thickness, reduced stress and reduced resistivity is formed.
摘要翻译：描述了一种用于在具有特征或非平面形貌的多晶硅层上产生均匀厚的钛，钴或镍硅化物层的工艺。将双层金属沉积到图案化多晶硅上，使得第一层覆盖非平面形貌的底部和顶部，并且第二层覆盖非平面形貌的侧壁和顶部。通过加热金属，蚀刻掉任何未反应的金属，并且第二次加热结果，形成均匀厚度的金属硅化物层，减少的应力和降低的电阻率。

8. 发明授权

US07553755B2 Method for symmetric deposition of metal layer 有权
标题翻译：金属层对称沉积方法
公开(公告)号：US07553755B2
公开(公告)日：2009-06-30
申请号：US11334610
申请日：2006-01-18
申请人： Sheng-Hui Hsieh , Ling-Wuu Yang , Chi-Tung Huang , Kuang-Chao Chen
发明人： Sheng-Hui Hsieh , Ling-Wuu Yang , Chi-Tung Huang , Kuang-Chao Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer registration key can be accurately detected and the metal layer registration key overlay shift can be improved.
摘要翻译：金属层对准沉积金属层配准密钥的方法包括使用MOCVD来形成金属层。一旦形成对称金属层，就可以精确地检测金属层配准密钥，并且可以提高金属层配准密钥重叠偏移。

9. 发明授权

US06559490B1 Method of processing dielectric layer in ferroelectric RAM and structure of the like 有权
标题翻译：铁电RAM中介质层的处理方法及其结构
公开(公告)号：US06559490B1
公开(公告)日：2003-05-06
申请号：US10065612
申请日：2002-11-04
申请人： Chi-Tung Huang
发明人： Chi-Tung Huang
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L29/516
摘要： A method of processing dielectric layers in FeRAM and the structure of the like are provided. A FeRAM having a barrier layer, a first electrode, a second electrode, and a ferroelectric material is sandwiched between two layers of gradient dielectric layers. These gradient dielectric layers have changing refraction index from one side to the other side. As a result, these gradient dielectric layers prevent hydrogen from damaging the FeRAM structure. The change in refraction index is achieved by adjusting the ratio and deposition power of the SiH4 and N2O during plasma enhanced chemical vapor deposition of the gradient dielectric layers.
摘要翻译：提供了一种在FeRAM中处理电介质层的方法及其结构。具有阻挡层，第一电极，第二电极和铁电材料的FeRAM被夹在两层梯度介电层之间。这些梯度介电层具有从一侧到另一侧的折射率变化。结果，这些梯度介电层阻止氢损害FeRAM结构。通过调整梯度介电层等离子体增强化学气相沉积期间SiH4和N2O的比例和沉积功率，可以实现折射率的变化。

10. 发明授权

US06514821B1 Method for planarizing dielectric layer of flash memory 有权
标题翻译：闪存介质层平面化方法
公开(公告)号：US06514821B1
公开(公告)日：2003-02-04
申请号：US10165631
申请日：2002-06-07
申请人： Chi-Tung Huang
发明人： Chi-Tung Huang
IPC分类号： H01L21336
CPC分类号： C09G1/02 , H01L21/31053 , H01L27/112 , H01L27/115
摘要： A method of planarizing a dielectric layer of a flash memory. In the present invention, a high selectivity slurry is used to planarize a dielectric layer of a flash memory. The high selectivity slurry comprises a Ceria-polishing-particle-containing slurry having CeO2 and a planarity selective additive having polycarboxylate. The concentration of CeO2 in the Ceria-polishing-particle-containing slurry is 5 wt % within a tolerance around 25% and the concentration of polycarboxylate in the planarity selective additive is 1-10 wt %.
摘要翻译：平面化闪速存储器的电介质层的方法。在本发明中，使用高选择性浆料来平坦化闪速存储器的电介质层。高选择性浆料包含具有CeO 2的含二氧化铈抛光颗粒的浆料和具有多羧酸盐的平面选择性添加剂。在含二氧化铈抛光颗粒的浆料中CeO 2的浓度在约25％的公差内为5重量％，平面选择性添加剂中的聚羧酸盐的浓度为1-10重量％。

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