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    • 5. 发明申请
    • Highly energy-efficient processor employing dynamic voltage scaling
    • 采用动态电压调节的高能效处理器
    • US20070150763A1
    • 2007-06-28
    • US11520177
    • 2006-09-13
    • Yil Suk YangJong Dae KimSoon Il YeoChun Gi Lyuh
    • Yil Suk YangJong Dae KimSoon Il YeoChun Gi Lyuh
    • G06F1/00
    • G06F1/3203G06F1/3287G06F1/3293G06F1/3296Y02D10/122Y02D10/171Y02D10/172Y02D50/20
    • Provided is a highly energy-efficient processor architecture. The architecture employs 2-stage dynamic voltage scaling (DVS) and a sleep mode for high energy efficiency, dynamically controls the power supply voltage and activation of an embedded processor with instructions, and thus can prevent performance deterioration while reducing power consumption.A highly energy-efficient processor employing the processor architecture includes: a function unit block for performing an operation according to instructions input from the outside; at least one peripheral unit block for performing data communication with an external device; an instruction decoder for interpreting the input instructions and determining operation modes of the function unit block and peripheral unit block required for executing the interpreted instructions; a function unit block driver for applying a different power supply voltage according to the operation mode of the function unit block to the function unit block; and a peripheral unit block driver for applying a different power supply voltage according to the operation mode of the peripheral unit block to the peripheral unit block.
    • 提供了一种高能效的处理器架构。 该架构采用2级动态电压调节(DVS)和睡眠模式以实现高能效,通过指令动态控制电源电压和嵌入式处理器的激活,从而可以在降低功耗的同时防止性能下降。 采用该处理器架构的高能效处理器包括:功能单元块,用于根据从外部输入的指令进行操作; 用于与外部设备进行数据通信的至少一个外围单元块; 用于解释输入指令并确定执行解释指令所需的功能单元块和外围单元块的操作模式的指令解码器; 功能单元块驱动器,用于根据功能单元块的操作模式将不同的电源电压施加到功能单元块; 以及外围单元块驱动器,用于根据外围单元块的操作模式向外围单元块施加不同的电源电压。
    • 6. 发明授权
    • Highly energy-efficient processor employing dynamic voltage scaling
    • 采用动态电压调节的高能效处理器
    • US07805620B2
    • 2010-09-28
    • US11520177
    • 2006-09-13
    • Yil Suk YangJong Dae KimSoon Il YeoChun Gi Lyuh
    • Yil Suk YangJong Dae KimSoon Il YeoChun Gi Lyuh
    • G06F1/00
    • G06F1/3203G06F1/3287G06F1/3293G06F1/3296Y02D10/122Y02D10/171Y02D10/172Y02D50/20
    • Provided is a highly energy-efficient processor architecture. The architecture employs 2-stage dynamic voltage scaling (DVS) and a sleep mode for high energy efficiency, dynamically controls the power supply voltage and activation of an embedded processor with instructions, and thus can prevent performance deterioration while reducing power consumption.A highly energy-efficient processor employing the processor architecture includes: a function unit block for performing an operation according to instructions input from the outside; at least one peripheral unit block for performing data communication with an external device; an instruction decoder for interpreting the input instructions and determining operation modes of the function unit block and peripheral unit block required for executing the interpreted instructions; a function unit block driver for applying a different power supply voltage according to the operation mode of the function unit block to the function unit block; and a peripheral unit block driver for applying a different power supply voltage according to the operation mode of the peripheral unit block to the peripheral unit block.
    • 提供了一种高能效的处理器架构。 该架构采用2级动态电压调节(DVS)和睡眠模式以实现高能效,通过指令动态控制电源电压和嵌入式处理器的激活,从而可以在降低功耗的同时防止性能下降。 采用该处理器架构的高能效处理器包括:功能单元块,用于根据从外部输入的指令进行操作; 用于与外部设备进行数据通信的至少一个外围单元块; 用于解释输入指令并确定执行解释指令所需的功能单元块和外围单元块的操作模式的指令解码器; 功能单元块驱动器,用于根据功能单元块的操作模式将不同的电源电压施加到功能单元块; 以及外围单元块驱动器,用于根据外围单元块的操作模式向外围单元块施加不同的电源电压。
    • 7. 发明申请
    • Multi-threshold CMOS latch circuit
    • 多阈值CMOS锁存电路
    • US20070126486A1
    • 2007-06-07
    • US11607743
    • 2006-12-01
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • H03K3/00
    • H03K3/356156H03K3/012
    • Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.
    • 提供了一种多阈值互补金属氧化物半导体(MTCMOS)锁存电路,包括:数据反相电路,用于在睡眠控制信号的控制下反相输出输入数据; 传输门,用于在时钟控制信号的控制下传送从数据反相电路输出的数据信号; 信号控制电路,用于在复位控制信号和睡眠控制信号的控制下输出从传输门输出的数据信号; 以及用于反馈从信号控制电路输出的信号并且以睡眠模式保存数据的反馈电路。 MTCMOS锁存电路可以将由于按比例缩小到纳米级的元件引起的漏电流引起的功耗最小化,并且还通过使用具有低阈值电压的元件有助于逻辑电路的高速操作。
    • 9. 发明授权
    • Multi-threshold CMOS latch circuit
    • 多阈值CMOS锁存电路
    • US07391249B2
    • 2008-06-24
    • US11607743
    • 2006-12-01
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • Dae Woo LeeYil Suk YangGyu Hyun KimSoon Il YeoJong Dae Kim
    • H03K3/289
    • H03K3/356156H03K3/012
    • Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.
    • 提供了一种多阈值互补金属氧化物半导体(MTCMOS)锁存电路,包括:数据反相电路,用于在睡眠控制信号的控制下反相输出输入数据; 传输门,用于在时钟控制信号的控制下传送从数据反相电路输出的数据信号; 信号控制电路,用于在复位控制信号和睡眠控制信号的控制下输出从传输门输出的数据信号; 以及用于反馈从信号控制电路输出的信号并且以睡眠模式保存数据的反馈电路。 MTCMOS锁存电路可以将由于按比例缩小到纳米级的元件引起的漏电流引起的功耗最小化,并且还通过使用具有低阈值电压的元件有助于逻辑电路的高速操作。