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1. 发明授权

US5203957A Contact sidewall tapering with argon sputtering 失效
标题翻译：氩气溅射接触侧壁逐渐变细
公开(公告)号：US5203957A
公开(公告)日：1993-04-20
申请号：US713508
申请日：1991-06-12
申请人： Chue-San Yoo , Ting-Hwang Lin , Sui-Hei Kuo
发明人： Chue-San Yoo , Ting-Hwang Lin , Sui-Hei Kuo
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/76826 , H01L21/31116 , H01L21/76804
摘要： The method for making a contact opening for an integrated circuit having a feature size of about one micrometer or less is accomplished by first providing an integrated circuit structure having device elements within a semiconductor substate and multilayer insulating layers thereover. A resist masking layer is formed over the multilayer insulating layer having openings therein in the areas where the contact openings are desired. Isotropic etching is done through a desired thickness portion of multilayer insulating layer. Anisotropic etching is now done through the remaining thickness of multilayer insulating layer to the semiconductor substrate to form the desired contact opening. The resist layer is removed. The structure is subjected to an Argon sputter etching ambient to smooth the sharp corners at the upper surface of multilayer layer and the point where the isotropic etching ended and the anisotropic etching began. It is preferred that soft reactive ion etching be done for a period of less than about 30 seconds after said Argon sputter etching to reduce the increased contact resistance caused by this Argon sputter etching.
摘要翻译：通过首先提供具有在半导体子状态内的器件元件和其上的多层绝缘层的集成电路结构，来实现具有约1微米或更小特征尺寸的集成电路的接触开口的方法。在需要接触开口的区域中，在其上具有开口的多层绝缘层上形成抗蚀剂掩模层。通过多层绝缘层的所需厚度部分进行各向同性蚀刻。现在通过多层绝缘层的剩余厚度到半导体衬底来形成各向异性蚀刻以形成所需的接触开口。去除抗蚀剂层。该结构经受氩溅射蚀刻环境以平滑多层层的上表面处的尖角以及各向同性蚀刻结束的点和各向异性蚀刻开始。优选的是，在所述氩溅射蚀刻之后，软反应离子蚀刻进行时间小于约30秒，以减少由该氩溅射蚀刻引起的增加的接触电阻。

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