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1. 发明授权

US06842237B2 Phase shifted test pattern for monitoring focus and aberrations in optical projection systems 失效
标题翻译：用于监测光学投影系统中的聚焦和像差的相移测试图案
公开(公告)号：US06842237B2
公开(公告)日：2005-01-11
申请号：US10035061
申请日：2001-12-28
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Joseph P. Kirk , Nakgeuon Seong
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Joseph P. Kirk , Nakgeuon Seong
IPC分类号： G01M11/02 , G01B9/00
CPC分类号： G01M11/0264
摘要： A method is described for determining lens aberrations using a test reticle and a standard metrology tool. The method provides test patterns, preferably in the form of standard overlay metrology test patterns, that include blazed gratings having orientation and pitch selected to sample desired portions of the lens pupil. The method measures relative shifts in the imaged test patterns using standard metrology tools to provide both magnitude and sign of the aberrations. The metrology tools need not be modified if standard test patterns are used, but can be adapted to obtain additional information. The test reticles may be formed with multiple test patterns having a range of orientations and pitch in order to compute any desired order of lens aberration. Alternatively, single test patterns may be used to determine both the magnitude and sign of lower order lens aberrations, such as defocus or coma.
摘要翻译：描述了使用测试掩模版和标准测量工具确定透镜像差的方法。该方法提供测试图案，优选地以标准覆盖度量测试图案的形式，其包括具有选择的取向和间距的闪耀光栅以对透镜光瞳的所需部分进行采样。该方法使用标准计量工具测量成像测试图案中的相对位移，以提供像差的幅度和符号。如果使用标准测试模式，则不需要修改计量工具，但可以调整以获取其他信息。为了计算任何所需的镜片像差顺序，测试光罩可以形成有具有取向范围和间距的多个测试图案。或者，可以使用单个测试图案来确定低阶透镜像差的大小和符号，例如散焦或昏迷。

2. 发明授权

US6048651A Fresnel zone mask for pupilgram 失效
标题翻译：菲律宾地区面罩用于学生
公开(公告)号：US6048651A
公开(公告)日：2000-04-11
申请号：US177951
申请日：1998-10-23
申请人： Timothy A. Brunner , Joseph P. Kirk , Christopher J. Progler
发明人： Timothy A. Brunner , Joseph P. Kirk , Christopher J. Progler
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70591 , G03F1/44 , G03F7/70141
摘要： A test photomask comprising a fresnel zone target (FZT) pattern may be used to verify the adjustment of a precision projector illumination system of an image projection system. The method comprises the steps of creating the FZT pattern on a photomask, projecting a pupil diagram onto an image plane using the FZT pattern, and evaluating the pupil diagram to determine the illumination system adjustment.
摘要翻译：可以使用包括菲涅尔区域目标（FZT）图案的测试光掩模来验证图像投影系统的精密投影仪照明系统的调整。该方法包括以下步骤：在光掩模上产生FZT图案，使用FZT图案将光瞳图投影到图像平面上，并评估光瞳图以确定照明系统调整。

3. 发明授权

US5898498A Point interferometer to measure phase shift in reticles 失效
标题翻译：点干涉仪来测量光罩中的相移
公开(公告)号：US5898498A
公开(公告)日：1999-04-27
申请号：US5614
申请日：1998-01-09
申请人： Joseph P. Kirk
发明人： Joseph P. Kirk
IPC分类号： G01B9/04 , G01B9/02
CPC分类号： G01B9/04
摘要： A device to measure a phase shift of a step in a reticle is disclosed. The phase shift measuring device has a common path interferometer for receiving light from a light source and providing two point images separated from each other by an adjustable distance. A microscope having an objective focuses two point images to form two focused points along a reticle surface of the reticle. The reticle is moved between first and second positions, wherein at the first position, light beams from the two focused points enter the reticle surface, and wherein at the second position, the light beams from the two focused points enter a step surface of the step A detector receives light from the reticle for detection of the step phase shift.
摘要翻译：公开了一种用于测量掩模版中的台阶的相移的装置。相移测量装置具有用于从光源接收光并提供彼此间隔可调距离的两点图像的公共路径干涉仪。具有目标的显微镜将两点图像重点沿着掩模版的掩模版表面形成两个聚焦点。标线片在第一和第二位置之间移动，其中在第一位置，来自两个聚焦点的光束进入光罩表面，并且其中在第二位置，来自两个聚焦点的光束进入步骤检测器接收来自掩模版的光，以检测阶梯相移。

4. 发明授权

US4260259A Metal etch rate analyzer 失效
标题翻译：金属蚀刻率分析仪
公开(公告)号：US4260259A
公开(公告)日：1981-04-07
申请号：US974571
申请日：1978-12-29
申请人： Joseph P. Kirk
发明人： Joseph P. Kirk
IPC分类号： G01B11/00 , G01B11/04 , G01B11/06 , H01L21/306 , G01B9/02
CPC分类号： G01B11/0675
摘要： An improved interferometer system for detecting the etch rate of an opaque material, such as silicon or metal. The system includes means for producing two parallel beams of light, with one beam being directed to the surface of the opaque material, and the other beam being directed to the surface of an adjacent masking material of transparent nature. The rate of etch of the opaque material is detected from the interference pattern changes between the first beam and the second beam. The system utilizes a novel arrangement of beam splitters which results in equal path lengths for the respective beams and further includes a viewing light which is passed by a system of dichroic filters to enable observation of the focus spot.
摘要翻译：用于检测不透明材料（例如硅或金属）的蚀刻速率的改进的干涉仪系统。该系统包括用于产生两个平行光束的装置，其中一个光束被引导到不透明材料的表面，而另一个光束被引导到透明性质的相邻掩模材料的表面。从第一光束和第二光束之间的干涉图案变化来检测不透明材料的蚀刻速率。该系统利用分束器的新颖布置，其导致相应波束的相同的路径长度，并且还包括由二向色滤光器系统通过以观察焦点的观察光。

5. 发明授权

US6091486A Blazed grating measurements of lithographic lens aberrations 有权
标题翻译：光刻胶片像差的闪光光栅测量
公开(公告)号：US6091486A
公开(公告)日：2000-07-18
申请号：US225339
申请日：1999-01-05
申请人： Joseph P. Kirk
发明人： Joseph P. Kirk
IPC分类号： G01M11/02 , G02B5/18 , G03F7/20 , G03F7/207 , G01B9/00
CPC分类号： G03F7/70283 , G01M11/0242 , G01M11/0271 , G02B5/1871 , G03F7/705 , G03F7/706 , G03F7/70641
摘要： Exposures of a photosensitive material through an array of blazed gratings illuminate a lens asymmetrically to detect effects of a plurality of azimuthal aberrations including coma, astigmatism, and three-leaf and four-leaf clover aberrations. A plurality of such exposures of the array of blazed gratings at slightly differing focus allows detection of focus shift due to any aberrations present in the lens. Upon development of the plurality of exposures, contrast of each area is measured, for example, by reflection or scattering from the relief in the developed photosensitive material and the aberrations thus detected can be simulated by effective summation of individual aberration effects.
摘要翻译：通过闪耀的光栅阵列的感光材料的曝光不对称地照射透镜，以检测多个方位角像差的影响，包括彗差，散光以及三叶和四叶三叶草畸变。以稍微不同的焦点的闪耀光栅阵列的这种曝光的多次允许检测由于透镜中存在的任何像差引起的聚焦偏移。在显影多个曝光时，例如通过来自显影的感光材料中的凸起的反射或散射来测量每个区域的对比度，并且可以通过各个像差效应的有效求和来模拟所检测到的像差。

6. 发明授权

UST102104I4 Scanning optical system adapted for linewidth measurement in semiconductor devices 失效
标题翻译：适用于半导体器件中的线性测量的扫描光学系统
公开(公告)号：UST102104I4
公开(公告)日：1982-08-03
申请号：US173535
申请日：1980-07-30
申请人： Joseph P. Kirk , Josef Predatsch , Lo-Soun Su
发明人： Joseph P. Kirk , Josef Predatsch , Lo-Soun Su
IPC分类号： G01B11/00 , G01B11/02 , G01B11/30
CPC分类号： G01B11/02 , G01B11/306
摘要： The present invention is directed to an optical system particularly adapted for measuring the linewidth of conductors. The particular arrangement of the various components of the optical system provide a simple system with high resolution for use in measuring very small linewidths. The optical system of the present invention utilizes a DC signal which is simpler and easier to control than an AC signal used with some optical measurement systems. More particularly, the optical system of the present invention utilizes a principle used for accurate focusing or for topographical measurements to enhance the ability of the optical system to measure small linewidths.The optical system of the claimed invention includes a high intensity light source 18, such as a laser. Means are provided for defining and focusing a spot of the light source upon a surface 12 having features to be measured. The spot defining and focusing means include in sequence between the light source and the surface, a first lens 24, an aperture 26 and a second lens 32. The arrangement of the first and second lenses and the aperture is such that the light source is focused at the aperture by the first lens to provide a spot and the spot is focused on the surface 12 by the second lens. With this arrangement, the surface is located at the focal point of the second lens so that reflected light is refocused back in the plane of the aperture. The system further includes scanning means for selectively moving the spot across the surface to encounter the features to be measured. Light collection means 60, 62 are positioned proximate to the surface for detecting varying levels of light reflected from the surface as the spot is scanned over the edges of the features of interest. An electrical DC output is produced in response to the scanning. Means are provided for analyzing the output of the light sensitive means for providing high accuracy measurements of the distance between the detected edges of the features scanned by the spot.

7. 发明授权

US5808731A System and method for visually determining the performance of a photolithography system 失效
标题翻译：用于视觉确定光刻系统的性能的系统和方法
公开(公告)号：US5808731A
公开(公告)日：1998-09-15
申请号：US903662
申请日：1997-07-31
申请人： Joseph P. Kirk
发明人： Joseph P. Kirk
IPC分类号： G03F7/20 , G03F7/26 , G01B9/00
CPC分类号： G03F7/70591 , G03F7/2022 , G03F7/26 , G03F7/70616 , G03F7/70633
摘要： The preferred embodiments of the present invention provide a method and apparatus for visually inspecting features on a wafer that are smaller than can be optically resolved using normally using visible light. By providing a method for visually inspecting the features, the overall performance of the fabrication system can be determined. The preferred method patterns resist with two patterns having different spatial frequencies. The patterns combine to form a pattern in the resist that exhibits Moire beats. The Moire beat spatial frequency of the resulting pattern is significantly lower than the two spatial frequencies used, and thus can be visually inspected using light in the visible regions.
摘要翻译：本发明的优选实施例提供了一种用于目视检查晶片上的特征的方法和装置，该方法和装置比通过使用可见光通常可光学分辨的小。通过提供用于目视检查特征的方法，可以确定制造系统的整体性能。优选的方法图案用具有不同空间频率的两种图案抵抗。这些图案结合起来，形成了抗蚀剂中呈现莫尔条纹的图案。所得到的图案的莫尔拍击空间频率明显低于使用的两个空间频率，因此可以使用可见区域中的光进行视觉检查。

8. 发明授权

US4293224A Optical system and technique for unambiguous film thickness monitoring 失效
标题翻译：光学系统和技术，用于明确的膜厚监测
公开(公告)号：US4293224A
公开(公告)日：1981-10-06
申请号：US966415
申请日：1978-12-04
申请人： Charles A. Gaston , Joseph P. Kirk , Chester A. Wasik
发明人： Charles A. Gaston , Joseph P. Kirk , Chester A. Wasik
IPC分类号： G01B11/06 , G01B9/02
CPC分类号： G01B11/0675
摘要： An optical system and technique for monitoring a monotonic change in the thickness of a transparent film by means of optical interference, and for eliminating ambiguity in the identification of absolute film thickness. The system is particularly adapted for monitoring the etching of a dielectric film of uncertain initial thickness in microelectronic fabrication. The technique utilizes a white light source directed upon the film. Reflected light, modified by optical interference in the dielectric film, is monitored by photodetectors at two distinct wavelengths. The cyclic patterns of intensity change at the two wavelengths are compared to identify unambiguously the absolute thickness of the film, although the initial uncertainty in film thickness may have corresponded to several cycles of either wavelength pattern alone. To simplify phase comparison of the two cyclic patterns, wavelengths can be selected so that some particular coincidence of extrema in the two signals occurs at a film thickness less than the expected minimum initial thickness, and does not occur at any greater thickness up to and including the expected maximum. Determination of the absolute film thickness in this way permits further tracking of the etching process to the desired end point without overshoot.
摘要翻译：一种光学系统和技术，用于通过光学干涉监测透明膜的厚度的单调变化，并且用于消除绝对膜厚度的识别中的歧义。该系统特别适用于在微电子制造中监测初始厚度不确定的电介质膜的蚀刻。该技术利用指向胶片的白光源。通过光电干涉在电介质膜中改变的反射光由两个不同波长的光电探测器监测。比较两个波长处的强度变化的循环模式，以明确地识别薄膜的绝对厚度，尽管膜厚度的初始不确定度可能对应于单独的波长图案的几个周期。为了简化两个循环图案的相位比较，可以选择波长，使得两个信号中的极值的一些特定的重合出现在小于预期的最小初始厚度的膜厚度上，并且不会发生在任何更大的厚度直到并包括预期最大值。以这种方式确定绝对膜厚度允许进一步将蚀刻工艺跟踪到期望的终点而没有过冲。

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