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1. 发明授权

US4293224A Optical system and technique for unambiguous film thickness monitoring 失效
标题翻译：光学系统和技术，用于明确的膜厚监测
公开(公告)号：US4293224A
公开(公告)日：1981-10-06
申请号：US966415
申请日：1978-12-04
申请人： Charles A. Gaston , Joseph P. Kirk , Chester A. Wasik
发明人： Charles A. Gaston , Joseph P. Kirk , Chester A. Wasik
IPC分类号： G01B11/06 , G01B9/02
CPC分类号： G01B11/0675
摘要： An optical system and technique for monitoring a monotonic change in the thickness of a transparent film by means of optical interference, and for eliminating ambiguity in the identification of absolute film thickness. The system is particularly adapted for monitoring the etching of a dielectric film of uncertain initial thickness in microelectronic fabrication. The technique utilizes a white light source directed upon the film. Reflected light, modified by optical interference in the dielectric film, is monitored by photodetectors at two distinct wavelengths. The cyclic patterns of intensity change at the two wavelengths are compared to identify unambiguously the absolute thickness of the film, although the initial uncertainty in film thickness may have corresponded to several cycles of either wavelength pattern alone. To simplify phase comparison of the two cyclic patterns, wavelengths can be selected so that some particular coincidence of extrema in the two signals occurs at a film thickness less than the expected minimum initial thickness, and does not occur at any greater thickness up to and including the expected maximum. Determination of the absolute film thickness in this way permits further tracking of the etching process to the desired end point without overshoot.
摘要翻译：一种光学系统和技术，用于通过光学干涉监测透明膜的厚度的单调变化，并且用于消除绝对膜厚度的识别中的歧义。该系统特别适用于在微电子制造中监测初始厚度不确定的电介质膜的蚀刻。该技术利用指向胶片的白光源。通过光电干涉在电介质膜中改变的反射光由两个不同波长的光电探测器监测。比较两个波长处的强度变化的循环模式，以明确地识别薄膜的绝对厚度，尽管膜厚度的初始不确定度可能对应于单独的波长图案的几个周期。为了简化两个循环图案的相位比较，可以选择波长，使得两个信号中的极值的一些特定的重合出现在小于预期的最小初始厚度的膜厚度上，并且不会发生在任何更大的厚度直到并包括预期最大值。以这种方式确定绝对膜厚度允许进一步将蚀刻工艺跟踪到期望的终点而没有过冲。

2. 发明授权

US4367044A Situ rate and depth monitor for silicon etching 失效
标题翻译：硅蚀刻的场速率和深度监测
公开(公告)号：US4367044A
公开(公告)日：1983-01-04
申请号：US221868
申请日：1980-12-31
申请人： Robert M. Booth, Jr. , Chester A. Wasik
发明人： Robert M. Booth, Jr. , Chester A. Wasik
IPC分类号： G01B11/06 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/66 , G01B21/08 , G01B17/02
CPC分类号： G01B11/0675
摘要： An in situ thickness change monitor for determining thickness change in opaque product material, such as silicon, in chamber apparatus, such as reactive ion etching apparatus, operative to produce such thickness change. Reference material having thickness change properties, such as etch-rate, correlatable to the product material thickness change properties is deposited upon a substrate having an index of refraction such as to form a monitor exhibiting an optical discontinuity. With the monitor positioned within the chamber with the product material, light directed thereto acts to provide reflected beams producing light having an intensity variation due to interference indicative of the thickness of the reference material. Changes in the thickness of the reference material are correlated to changes in thickness of the product material.
摘要翻译：用于确定不透明产品材料（例如硅）中的厚度变化的原位厚度变化监测器，在诸如反应离子蚀刻装置的腔室装置中，用于产生这种厚度变化。具有与产品材料厚度变化特性相关的厚度变化特性（例如蚀刻率）的参考材料沉积在具有折射率的基底上，以形成显示出光学不连续性的监视器。利用产品材料将显示器定位在腔室内，指向其的光线用于提供产生具有指示参考材料的厚度的干涉引起的强度变化的光的反射光束。参考材料厚度的变化与产品材料的厚度变化相关。

3. 发明授权

US5235626A Segmented mask and exposure system for x-ray lithography 失效
标题翻译：用于X-RAY LITHOGRAPHY的SEGMENTED MASK和曝光系统
公开(公告)号：US5235626A
公开(公告)日：1993-08-10
申请号：US781562
申请日：1991-10-22
申请人： Alexander L. Flamholz , Robert P. Rippstein , Yuli Vladimirsky , Chester A. Wasik
发明人： Alexander L. Flamholz , Robert P. Rippstein , Yuli Vladimirsky , Chester A. Wasik
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F1/22 , G03F7/70475
摘要： An x-ray lithography mask design provides for replacement of a single large area membrane with a set of smaller membranes (segments) fabricated on a single mask substrate forming a segmented mask. The segments are arranged serially so that they can be sequentially aligned and exposed by a shaped x-ray beam. Thus, the segmented mask is a series of mask membrane segments mounted together.

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