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    • 4. 发明授权
    • Plural interleaved exposure process for increased feature aspect ratio in dense arrays
    • 多个交错曝光过程,用于增加密集阵列中的特征长宽比
    • US06451508B1
    • 2002-09-17
    • US09561472
    • 2000-04-28
    • Scott J. BukofskyGerhard KunkelAlan C. Thomas
    • Scott J. BukofskyGerhard KunkelAlan C. Thomas
    • G03F720
    • G03F7/70466G03F1/70
    • A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Stepper-framing-blades are moved over the dead zone to prevent additional exposures after an initial exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position.
    • 用于在双重曝光步骤和重复过程中曝光工件的方法通过形成掩模版掩模的设计而开始。 通过删除并置的一些特征来解构掩模版掩模的设计。 在工件上形成未曝光的抗蚀剂。 将工件和掩模版掩模装入步进器。 通过掩模掩模将工件暴露。 用纳秒级重新定位工件。 然后在重新定位后将工件暴露在掩模版掩模之外。 测试多次曝光过程是否完成。 如果测试结果为“否”,则过程循环返回以重复上述步骤。 否则该过程已经完成。 通过单个标记的多次曝光产生重叠标记。 围绕阵列区域提供死区,其中在原始曝光中曝光之后发生印刷。 步进框架刀片在死区移动,以防止在初始曝光后的额外曝光。 或者,可以通过步进一系列完整的步骤,然后返回到起始位置,首先完全暴露工件,从而使得纳秒能够以相同的方式从复位起始位置复位起始位置并再次曝光 纳米级位置。
    • 5. 发明授权
    • Elimination of standing waves in photoresist
    • 消除光刻胶中的驻波
    • US06268907B1
    • 2001-07-31
    • US09078288
    • 1998-05-13
    • Donald J. SamuelsAlan C. Thomas
    • Donald J. SamuelsAlan C. Thomas
    • G03B2754
    • G03F7/70191G03F7/70091G03F7/70583
    • The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.
    • 本发明提供了一种方法和光学光刻系统,其消除通常在光致抗蚀剂中观察到的驻波效应,而不需要改变光致抗蚀剂的厚度,利用抗反射涂层材料或改变光源。 具体地说,本发明通过用来自不同相位的光源的光使光致抗蚀剂曝光来补偿驻波。 也就是说,在本发明中,在一个阶段的单一剂量到不同阶段的多个剂量的光照变化; 因此将驻波的影响分散在各个阶段,这又消除了驻波。