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1. 发明申请

US20110150017A1 Relaxed InGaN/AlGaN Templates 有权
标题翻译：轻松的InGaN / AlGaN模板
公开(公告)号：US20110150017A1
公开(公告)日：2011-06-23
申请号：US12642558
申请日：2009-12-18
申请人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
发明人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
IPC分类号： H01S5/00 , H01L29/12 , H01L21/04 , H01L33/00
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/22 , H01L33/32 , H01S5/0213 , H01S5/3203 , H01S5/32341
摘要： A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.
摘要翻译：放宽的InGaN模板采用在常规基底层（例如，蓝宝石）上在低温下生长的GaN或InGaN成核层。成核层通常非常粗糙和多晶。然后在常温下生长单晶InGaN缓冲层。虽然不是必需的，缓冲层通常是未掺杂的，并且通常在高压下生长以促进平坦化并改善表面平滑度。然后可以在低压下生长随后的n掺杂的盖层，以形成光子或电子器件的n接触。在一些情况下，在成核层之前生长润湿层（通常是低温AlN）。也可以使用本发明的方法制造其它模板，例如Si或SiC上的AlGaN。

2. 发明申请

US20110281424A1 Relaxed InGaN/AlGaN Templates 有权
标题翻译：轻松的InGaN / AlGaN模板
公开(公告)号：US20110281424A1
公开(公告)日：2011-11-17
申请号：US13193530
申请日：2011-07-28
申请人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
发明人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
IPC分类号： H01L21/20 , C30B25/10 , C30B25/02
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/22 , H01L33/32 , H01S5/0213 , H01S5/3203 , H01S5/32341
摘要： A relaxed InGaN template is formed by growing a GaN or InGaN nucleation layer at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures on the nucleation layer. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.
摘要翻译：通过在常规基底层（例如，蓝宝石）上在低温下生长GaN或InGaN成核层来形成松弛的InGaN模板。成核层通常非常粗糙和多晶。然后在成核层上的常温下生长单晶InGaN缓冲层。虽然不是必需的，缓冲层通常是未掺杂的，并且通常在高压下生长以促进平坦化并改善表面平滑度。然后可以在低压下生长随后的n掺杂的盖层，以形成光子或电子器件的n接触。在一些情况下，在成核层之前生长润湿层（通常是低温AlN）。也可以使用本发明的方法制造其它模板，例如Si或SiC上的AlGaN。

3. 发明授权

US08143647B2 Relaxed InGaN/AlGaN templates 有权
标题翻译：放宽的InGaN / AlGaN模板
公开(公告)号：US08143647B2
公开(公告)日：2012-03-27
申请号：US12642558
申请日：2009-12-18
申请人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
发明人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
IPC分类号： H01L21/02 , H01L21/3205
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/22 , H01L33/32 , H01S5/0213 , H01S5/3203 , H01S5/32341
摘要： A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.
摘要翻译：放宽的InGaN模板采用在常规基底层（例如，蓝宝石）上在低温下生长的GaN或InGaN成核层。成核层通常非常粗糙和多晶。然后在常温下生长单晶InGaN缓冲层。虽然不是必需的，缓冲层通常是未掺杂的，并且通常在高压下生长以促进平坦化并改善表面平滑度。然后可以在低压下生长随后的n掺杂的盖层，以形成光子或电子器件的n接触。在一些情况下，在成核层之前生长润湿层（通常是低温AlN）。也可以使用本发明的方法制造其它模板，例如Si或SiC上的AlGaN。

4. 发明授权

US08143154B2 Relaxed InGaN/AlGaN templates 有权
标题翻译：轻松的InGaN / AlGaN模板
公开(公告)号：US08143154B2
公开(公告)日：2012-03-27
申请号：US13193530
申请日：2011-07-28
申请人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
发明人： Christopher L. Chua , Zhihong Yang , Andre Strittmatter , Mark R. Teepe
IPC分类号： H01L21/3205 , H01L21/02
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/22 , H01L33/32 , H01S5/0213 , H01S5/3203 , H01S5/32341
摘要： A relaxed InGaN template is formed by growing a GaN or InGaN nucleation layer at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures on the nucleation layer. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.
摘要翻译：通过在常规基底层（例如，蓝宝石）上在低温下生长GaN或InGaN成核层来形成松弛的InGaN模板。成核层通常非常粗糙和多晶。然后在成核层上的常温下生长单晶InGaN缓冲层。虽然不是必需的，缓冲层通常是未掺杂的，并且通常在高压下生长以促进平坦化并改善表面平滑度。然后可以在低压下生长随后的n掺杂的盖层，以形成光子或电子器件的n接触。在一些情况下，在成核层之前生长润湿层（通常是低温AlN）。也可以使用本发明的方法制造其它模板，例如Si或SiC上的AlGaN。

5. 发明申请

US20120280212A1 Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same 有权
标题翻译：基于半极化氮化物的发光结构及其形成方法
公开(公告)号：US20120280212A1
公开(公告)日：2012-11-08
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L33/06
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

6. 发明申请

US20110291074A1 Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same 有权
标题翻译：基于半极化氮化物的发光结构及其形成方法
公开(公告)号：US20110291074A1
公开(公告)日：2011-12-01
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L33/06 , H01L21/20
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

7. 发明授权

US08330144B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08330144B2
公开(公告)日：2012-12-11
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

8. 发明授权

US08247249B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08247249B2
公开(公告)日：2012-08-21
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

9. 发明授权

US08023546B2 Semiconductor laser with integrated contact and waveguide 有权
标题翻译：具有集成接触和波导的半导体激光器
公开(公告)号：US08023546B2
公开(公告)日：2011-09-20
申请号：US12564302
申请日：2009-09-22
申请人： Andre Strittmatter , Christopher L. Chua , Noble M. Johnson
发明人： Andre Strittmatter , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0425 , H01S5/0655 , H01S5/2202 , H01S2301/18
摘要： A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.
摘要翻译：一种半导体发光器件代替传统的独立包层和接触结构，具有非外延接触和波导层。非外延接触和波导层由导电材料形成，并且其在其中和在注入区域上具有凹部。填充该区域的空气与用于非外延接触和波导层的材料的适当选择产生所需的横向波导。金属银在这种材料的一个选择。该凹部也可以填充折射率高于形成非外延接触和波导层的材料的折射率的低损耗材料。透明导电氧化物（例如，氧化铟锡（ITO），氧化锌（ZnO）等），合适的金属（例如，金）或包含导电氧化物和金属的复合材料在UV和附近提供低吸收 -IR波长，因此是凹陷内的良好候选材料。

10. 发明授权

US08000371B2 Vertical surface emitting semiconductor device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US08000371B2
公开(公告)日：2011-08-16
申请号：US12564264
申请日：2009-09-22
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
IPC分类号： H01S3/091
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

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