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1. 发明授权

US09166375B2 Vertical surface emitting semiconductor device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US09166375B2
公开(公告)日：2015-10-20
申请号：US13586469
申请日：2012-08-15
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
IPC分类号： H01S5/343 , B82Y20/00 , H01S5/04 , H01S3/109 , H01S5/183 , H01S5/34 , H01S3/0933 , H01S5/024 , H01S5/14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

2. 发明申请

US20130016746A1 Vertical Surface Emitting Semiconductor Device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US20130016746A1
公开(公告)日：2013-01-17
申请号：US13586469
申请日：2012-08-15
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
IPC分类号： H01S5/042 , H01S5/024
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

3. 发明授权

US08000371B2 Vertical surface emitting semiconductor device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US08000371B2
公开(公告)日：2011-08-16
申请号：US12564264
申请日：2009-09-22
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
IPC分类号： H01S3/091
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

4. 发明申请

US20100006023A1 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
标题翻译：在高氮化学势下制备薄膜和器件的方法
公开(公告)号：US20100006023A1
公开(公告)日：2010-01-14
申请号：US12171623
申请日：2008-07-11
申请人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
发明人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
IPC分类号： C30B23/02 , C30B35/00
CPC分类号： C30B25/02 , C30B25/14 , C30B29/403
摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.
摘要翻译：氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于非常丰富的活性氮种类的环境。因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

5. 发明申请

US20110268143A1 Vertical Surface Emitting Semiconductor Device 审中-公开
公开(公告)号：US20110268143A1
公开(公告)日：2011-11-03
申请号：US13180461
申请日：2011-07-11
申请人： André Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
发明人： André Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
IPC分类号： H01S3/04 , H01S5/187 , H01S5/34 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

6. 发明申请

US20110069729A1 Vertical Surface Emitting Semiconductor Device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US20110069729A1
公开(公告)日：2011-03-24
申请号：US12564264
申请日：2009-09-22
申请人： André Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
发明人： André Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
IPC分类号： H01S5/34 , H01S5/026
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内部引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

7. 发明授权

US07526007B2 Buried lateral index guided lasers and lasers with lateral current blocking layers 有权
标题翻译：埋入横向折射率引导激光器和具有横向电流阻挡层的激光器
公开(公告)号：US07526007B2
公开(公告)日：2009-04-28
申请号：US11304221
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , G02B6/1228 , G02B6/125 , G02B6/305 , G02B6/4204 , H01L21/3006 , H01L33/02 , H01L33/145 , H01L33/32 , H01S5/0265 , H01S5/162 , H01S5/18308 , H01S5/18358 , H01S5/204 , H01S5/2072 , H01S5/22 , H01S5/32366 , H01S5/34306 , H01S5/4087
摘要： A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
摘要翻译：描述了用于横向折射率引导的方法和结构。在该方法中，半导体器件有源区周围的横向区域暴露于氢。氢气调节围绕激光器有源区域的折射率，有助于将电载流子和所产生的光束限制在激光有源区域上。

8. 发明授权

US07843982B2 High power semiconductor device to output light with low-absorbtive facet window 有权
标题翻译：大功率半导体器件用低吸收面窗口输出光
公开(公告)号：US07843982B2
公开(公告)日：2010-11-30
申请号：US11300861
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/028
CPC分类号： H01S5/162 , B82Y20/00 , G02B6/1228 , G02B6/305 , G02B6/4204 , G02B2006/1215 , H01L33/02 , H01L33/145 , H01L33/32 , H01S5/0265 , H01S5/18308 , H01S5/18358 , H01S5/204 , H01S5/2072 , H01S5/22 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/4087
摘要： A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.
摘要翻译：描述了避免由小平面加热引起的装置故障的方法。该方法特别适用于半导体激光器。在该方法中，包括GaAsN的半导体激光刻面被氢化，使得该刻面内的带隙大于InGaAsN激光器的有源区域中的带隙。增加的带隙减小了小面上的光的吸收和结果的相关加热。

9. 发明授权

US07764721B2 System for adjusting the wavelength light output of a semiconductor device using hydrogenation 失效
标题翻译：用于使用氢化调节半导体器件的波长光输出的系统
公开(公告)号：US07764721B2
公开(公告)日：2010-07-27
申请号：US11300962
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/187 , H01S5/34333
摘要： A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.
摘要翻译：描述了用于调整半导体器件的波长输出的方法和结构。在该方法中，半导体器件的有源区中的氢浓度在制造期间或在器件制造之后被调整。该调整提供了一种简单的技术，用于微调许多设备类型，包括常规激光器和VCSEL结构。该调整还允许在单个晶片衬底上大量生产许多不同频率的激光器，这是对于波分复用系统特别理想的系统。

10. 发明授权

US08373860B2 Transmitting/reflecting emanating light with time variation 有权
标题翻译：发射/反射发光随时间变化
公开(公告)号：US08373860B2
公开(公告)日：2013-02-12
申请号：US12762702
申请日：2010-04-19
申请人： Peter Kiesel , Markus Beck , Noble M. Johnson , Michael Bassler
发明人： Peter Kiesel , Markus Beck , Noble M. Johnson , Michael Bassler
IPC分类号： G01N21/25
CPC分类号： G01N21/05 , G01N21/255 , G01N21/645 , G01N2021/0346
摘要： A filter arrangement can transmit and/or reflect light emanating from a moving object so that the emanating light has time variation, and the time variation can include information about the object, such as its type. For example, emanating light from segments of a path can be transmitted/reflected through positions of a filter assembly, and the transmission functions of the positions can be sufficiently different that time variation occurs in the emanating light between segments. Or emanating light from a segment can be transmitted/reflected through a filter component in which simpler transmission functions are superimposed, so that time variation occurs in the emanating light in accordance with superposition of two simpler non-uniform transmission functions. One or more mask arrangements can be configured to receive the emanating light and in response provide encoded emanating light.
摘要翻译：滤波器装置可以发射和/或反射从移动物体发出的光，使得发射光具有时间变化，并且时间变化可以包括关于物体的信息，例如其类型。例如，可以通过路径的区段发出光，并通过过滤器组件的位置进行透射/反射，并且位置的透射函数可以充分地不同，从而在区间之间的发光中发生时间变化。或者发射来自光束的光可以通过其中叠加更简单的透射函数的滤光器部件被透射/反射，使得根据两个更简单的不均匀透射函数的叠加在发射光中发生时间变化。一个或多个掩模布置可以被配置为接收发射光并且作为响应提供编码的发射光。

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