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1. 发明授权

US4498093A High-power III-V semiconductor device 失效
标题翻译：大功率III-V半导体器件
公开(公告)号：US4498093A
公开(公告)日：1985-02-05
申请号：US302030
申请日：1981-09-14
申请人： Christopher L. Allyn , Peter G. Flahive , David E. Iglesias , Wolfgang O. W. Schlosser , Stuart H. Wemple
发明人： Christopher L. Allyn , Peter G. Flahive , David E. Iglesias , Wolfgang O. W. Schlosser , Stuart H. Wemple
IPC分类号： H01L29/423 , H01L29/80
CPC分类号： H01L29/42376 , H01L29/42316 , H01L29/4238
摘要： III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
摘要翻译：提供诸如MESFET，JFET，MOSFET和IGFET器件的III-V半导体器件具有相对高的欧姆栅极或宽栅极指宽，这对于最大限度地利用半导体表面是理想的。例如，使用横截面积为1.2平方微米，长度为300微米以上的铝栅电极。所产生的装置具有出乎意料的高功率处理能力。

2. 发明授权

US4426656A GaAs FETs Having long-term stability 失效
标题翻译： GaAs FET具有长期稳定性
公开(公告)号：US4426656A
公开(公告)日：1984-01-17
申请号：US229744
申请日：1981-01-29
申请人： James V. DiLorenzo , James C. Hwang , William C. Niehaus , Wolfgang O. W. Schlosser , Stuart H. Wemple
发明人： James V. DiLorenzo , James C. Hwang , William C. Niehaus , Wolfgang O. W. Schlosser , Stuart H. Wemple
IPC分类号： H01L21/318 , H01L23/29 , H01L23/31 , H01L29/08 , H01L29/812 , H01L29/80
CPC分类号： H01L23/3171 , H01L21/3185 , H01L23/291 , H01L29/0843 , H01L29/812 , H01L2924/0002 , H01L2924/3025
摘要： GaAs FETs exhibit excellent long-term stability if they have a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees C. indicate essentially no device failures after 200 hours of observation and a median failure time of approximately 500 hours.
摘要翻译：如果它们具有漏极凸缘，具有降低的枝晶尺寸的漏极接触和氮化硅钝化层，则GaAs FET具有优异的长期稳定性。装置外壳温度为250摄氏度时的加速老化试验，在观察200小时后基本没有显示器件故障，中位失效时间约为500小时。

3. 发明授权

US4189208A Zinc chloride optical fibers for transmission in the infrared 失效
标题翻译：氯化锌光纤在红外线传输
公开(公告)号：US4189208A
公开(公告)日：1980-02-19
申请号：US885198
申请日：1978-03-10
申请人： William H. Grodkiewicz , LeGrand G. van Uitert , Stuart H. Wemple
发明人： William H. Grodkiewicz , LeGrand G. van Uitert , Stuart H. Wemple
IPC分类号： C03C3/32 , C03C13/04 , G02B6/10 , G02B5/14 , C03C25/02
CPC分类号： G02B6/102 , C03C13/041 , C03C3/32 , Y10S65/16
摘要： ZnCl.sub.2 optical fibers are advantageously used for transmission of radiation in the infrared portion of the spectrum. Losses as low as 10.sup.-3 dB/km may be obtained when radiation of wavelength between 3.0 and 4.5 microns is transmitted in such fibers. Fabrication techniques allow for the formation of graded fibers to further improve transmission characteristics.
摘要翻译： ZnCl2光纤有利地用于在光谱的红外部分中的辐射传输。当在这种光纤中传播波长在3.0微米到4.5微米之间的辐射时，可以获得低至10 -3 dB / km的损失。制造技术允许形成渐变纤维以进一步改善传输特性。

4. 发明授权

US5568094A Rf power amplifier with increased efficiency at low power 失效
标题翻译： Rf功率放大器在低功耗下具有更高的效率
公开(公告)号：US5568094A
公开(公告)日：1996-10-22
申请号：US356812
申请日：1994-12-15
申请人： John W. Bowen , Dwight Daugherty , Stuart H. Wemple , Melvin West, Jr.
发明人： John W. Bowen , Dwight Daugherty , Stuart H. Wemple , Melvin West, Jr.
IPC分类号： H03F3/20 , H03F1/02 , H03G3/00 , H03G3/30
CPC分类号： H03F3/24 , H03F1/0211 , H03G3/007 , H03G3/3042 , H03G3/3047 , H03F2200/405 , H03F2200/516
摘要： An apparatus and method is provided that uses a simple voltage ratio technique to supply specific voltages to a voltage variable attenuator, and the gates of a GaAs RF power amplifier in order to control the efficiency of the amplifier. The output of the power amplifier is sampled and then fed back to the variable voltage attenuator as a control signal. A ratio portion of the control signal is then used to control the gate biases of the power amplifier. When the power requirements are less than maximum, the voltage ratio will become more negative, resulting in less current. As the RF output increases, the voltage ratio will become more positive. Therefore, as the DC voltage varies, the power amplifier's output power will vary accordingly providing the desired output power with enhanced efficiency.
摘要翻译：提供了一种使用简单的电压比技术向电压可变衰减器和GaAs RF功率放大器的栅极提供特定电压以便控制放大器的效率的装置和方法。功率放大器的输出被采样，然后作为控制信号反馈到可变电压衰减器。然后控制信号的比率部分用于控制功率放大器的栅极偏置。当功率要求小于最大值时，电压比将变得更负，导致电流较小。随着RF输出增加，电压比将变得更加正。因此，随着直流电压的变化，功率放大器的输出功率将相应地变化，从而提供所需的输出功率并提高效率。

5. 发明授权

US4300148A Semiconductor device gate-drain configuration 失效
标题翻译：半导体器件栅 - 漏配置
公开(公告)号：US4300148A
公开(公告)日：1981-11-10
申请号：US65526
申请日：1979-08-10
申请人： William C. Niehaus , Stuart H. Wemple
发明人： William C. Niehaus , Stuart H. Wemple
IPC分类号： H01L29/423 , H01L29/812 , H01L29/48
CPC分类号： H01L29/42316 , H01L29/8128
摘要： Power handling capability and gain of metal-semiconductor field effect devices is adversely affected by a phenomenon variously known as gate-drain avalanche or gate breakdown which occurs at elevated gate-drain voltage. Consequently, it is desirable to design devices so as to maximize gate-drain breakdown voltage V.sub.gd consistent with maximum output power capability.According to the invention, such voltage is maximized by a gate-drain configuration which involves approximate equalization of per-unit-area mobile charge in a portion of the active layer under the gate contact and in an adjoining portion between gate and drain contacts. Equalization of charge may be achieved by appropriate doping or appropriate choice of layer thickness, either alone or in combination. In particular, if dopant concentration per unit volume is essentially equal in the two portions, approximate equalization of conducting channel thickness in the two portions is called for. Devices of the invention are capable of higher gain and output power as is desirable in applications such as, e.g., the amplification of microwaves.
摘要翻译：功率处理能力和金属半导体场效应器件的增益受到各种所谓的栅极 - 漏极雪崩或栅极击穿的现象的不利影响，栅极 - 漏极雪崩或栅极击穿在升高的栅极 - 漏极电压下发生。因此，期望设计器件以最大化与最大输出功率能力一致的栅 - 漏击穿电压Vgd。根据本发明，这种电压通过栅极 - 漏极配置最大化，其包括栅极接触之下的有源层的一部分中以及栅极和漏极接触之间的邻接部分中的每单位面积移动电荷的近似均衡。电荷的均衡可以通过单独或组合地适当掺杂或适当选择层厚度来实现。特别地，如果在两部分中每单位体积的掺杂剂浓度基本相等，则需要两部分中的导电通道厚度的近似均衡。本发明的装置能够具有更高的增益和输出功率，如在诸如微波放大的应用中所希望的。

6. 发明授权

US4196439A Semiconductor device drain contact configuration 失效
标题翻译：半导体器件漏极接触配置
公开(公告)号：US4196439A
公开(公告)日：1980-04-01
申请号：US921585
申请日：1978-07-03
申请人： William C. Niehaus , Stuart H. Wemple
发明人： William C. Niehaus , Stuart H. Wemple
IPC分类号： H01L29/08 , H01L29/812 , H01L29/80
CPC分类号： H01L29/0891 , H01L29/8128
摘要： Disclosed are unipolar semiconductor devices such as, e.g., metal-semiconductor field effect transistors. The disclosed devices comprise an n- or p-type active layer on a substrate and a drain contact on the active layer.The active layer comprises two contiguous regions, namely a first, more heavily doped region which is in contact with the drain contact and a second, less heavily doped region which in a direction perpendicular to the active layer extends through the remainder of the active layer. In the disclosed configuration the more heavily doped region extends past the edge of the drain contact towards a source of free carriers such as e.g., a source contact.Devices incorporating such configuration of regions in the active layer are more resistant to burnout and are capable of operating at higher voltage and power levels.
摘要翻译：公开了单极半导体器件，例如金属 - 半导体场效应晶体管。所公开的器件包括衬底上的n型或p型有源层和有源层上的漏极接触。有源层包括两个连续的区域，即与漏极接触相接触的第一，更重掺杂的区域和在垂直于有源层的方向延伸穿过有源层的其余部分的第二较低重掺杂区域。在所公开的配置中，较高掺杂区域延伸穿过漏极接触边缘朝向自由载流体源，例如源极接触。在活性层中结合这样的区域配置的装置更能抵抗烧坏，并且能够在更高的电压和功率水平下操作。

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