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1. 发明授权

US08315024B2 Electrostatic discharge protection circuit, integrated circuit and method of protecting circuitry from an electrostatic discharge voltage 有权
标题翻译：静电放电保护电路，集成电路和保护电路免受静电放电电压的影响
公开(公告)号：US08315024B2
公开(公告)日：2012-11-20
申请号：US12560475
申请日：2009-09-16
申请人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krysztof Domanski
发明人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krysztof Domanski
IPC分类号： H02H3/22
CPC分类号： H01L27/0281 , H01L27/0285
摘要： Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node.
摘要翻译：本文给出了包括静电放电（ESD）保护电路的实现。 ESD保护电路包括第一晶体管和第二晶体管。第一晶体管具有耦合到第一电源线的第一端子和耦合到第二电源线的本体。第二晶体管具有耦合到第二电源线的第一端子，耦合到第一电源线的体和耦合到第一晶体管的第二端子以限定受保护节点的第二端子。 ESD保护电路还包括具有耦合到受保护节点的第一端子的限流元件。

2. 发明授权

US09197061B2 Electrostatic discharge clamping devices with tracing circuitry 有权
标题翻译：具有跟踪电路的静电放电钳位装置
公开(公告)号：US09197061B2
公开(公告)日：2015-11-24
申请号：US12975210
申请日：2010-12-21
申请人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
发明人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
IPC分类号： H02H9/00 , H02H9/04 , H01L27/02
CPC分类号： H02H9/046 , H01L27/0285
摘要： Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.
摘要翻译：描述对应于具有跟踪电路的静电放电钳位电路的技术和架构。

3. 发明授权

US08976496B2 Electrostatic discharge blocking circuits 有权
标题翻译：静电放电阻塞电路
公开(公告)号：US08976496B2
公开(公告)日：2015-03-10
申请号：US12975069
申请日：2010-12-21
申请人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krzysztof Domanski , Klaus von Arnim
发明人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krzysztof Domanski , Klaus von Arnim
IPC分类号： H02H9/04 , H02H3/22 , H02H3/20
CPC分类号： H02H9/046 , H02H3/202 , H02H3/22
摘要： Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.
摘要翻译：描述对应于静电放电阻断电路的技术和架构。

4. 发明申请

US20120154961A1 ELECTROSTATIC DISCHARGE BLOCKING CIRCUITS 有权
标题翻译：静电放电阻塞电路
公开(公告)号：US20120154961A1
公开(公告)日：2012-06-21
申请号：US12975069
申请日：2010-12-21
申请人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krzysztof Domanski , Klaus von Arnim
发明人： Christian Russ , Wolfgang Soldner , Gernot Langguth , David Alvarez , Krzysztof Domanski , Klaus von Arnim
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H02H3/202 , H02H3/22
摘要： Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.
摘要翻译：描述对应于静电放电阻断电路的技术和架构。

5. 发明申请

US20120154962A1 ELECTROSTATIC DISCHARGE CLAMPING DEVICES WITH TRACING CIRCUITRY 有权
标题翻译：具有跟踪电路的静电放电钳位装置
公开(公告)号：US20120154962A1
公开(公告)日：2012-06-21
申请号：US12975210
申请日：2010-12-21
申请人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
发明人： Christian Russ , Wolfgang Soldner , Klaus von Arnim , David Alvarez , Krzysztof Domanski , Gernot Langguth
IPC分类号： H02H9/00
CPC分类号： H02H9/046 , H01L27/0285
摘要： Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.
摘要翻译：描述对应于具有跟踪电路的静电放电钳位电路的技术和架构。

6. 发明授权

US08335064B2 ESD clamp adjustment 有权
标题翻译： ESD钳位调整
公开(公告)号：US08335064B2
公开(公告)日：2012-12-18
申请号：US12826983
申请日：2010-06-30
申请人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
发明人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
IPC分类号： H02H9/00 , H02H1/00 , H02H1/04 , H02H3/22 , H02H9/06
CPC分类号： H02H9/046 , H01L23/60 , H01L2924/0002 , H03K17/08122 , H01L2924/00
摘要： Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.
摘要翻译：本公开的实施例涉及静电放电（ESD）保护技术。例如，一些实施例包括可变电阻器，其选择性地将来自第一电路节点的输入ESD脉冲的功率分流到第二电路节点并远离半导体器件。提供给可变电阻器的控制电压使得晶体管在只有亚阈值电流（如果有的话）流动的完全关闭模式之间改变; 其中最大量的电流流动的完全启动模式; 以及其中中间和时变量的电流流动的模拟模式。特别地，模拟模式允许ESD保护装置比先前可实现的更精确地分流功率，使得ESD保护装置可以保护半导体器件免受ESD脉冲。

7. 发明申请

US20100090283A1 Electro Static Discharge Protection Device 有权
标题翻译：静电放电保护装置
公开(公告)号：US20100090283A1
公开(公告)日：2010-04-15
申请号：US12250436
申请日：2008-10-13
申请人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
发明人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
IPC分类号： H01L23/58 , H01L21/04
CPC分类号： H01L29/7436 , H01L27/0262 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type. A third heavily doped region is disposed in the second low doped region, the third heavily doped region comprising the second conductivity type and being coupled to a second power supply potential node.
摘要翻译：公开了一种用于防止静电放电的半导体器件。在一个实施例中，半导体器件包括设置在衬底中的第一低掺杂区域，设置在第一低掺杂区域内的第一重掺杂区域，第一重掺杂区域包括第一导电类型，第一低掺杂区域包括第二导电类型，第一和第二导电类型是相反的，第一重掺杂区域耦合到待保护的节点。所述半导体器件还包括耦合到第一电源电势节点的第二重掺杂区域，所述第二重掺杂区域由所述第一低掺杂区域的一部分与所述第一重掺杂区域分离，以及邻近设置的第二低掺杂区域第一低掺杂区域，第二低掺杂区域包括第一导电类型。第三重掺杂区域设置在第二低掺杂区域中，第三重掺杂区域包括第二导电类型并耦合到第二电源电位节点。

8. 发明授权

US08198651B2 Electro static discharge protection device 有权
标题翻译：静电放电保护装置
公开(公告)号：US08198651B2
公开(公告)日：2012-06-12
申请号：US12250436
申请日：2008-10-13
申请人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
发明人： Gernot Langguth , Wolfgang Soldner , Cornelius Christian Russ
IPC分类号： H01L29/02
CPC分类号： H01L29/7436 , H01L27/0262 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type. A third heavily doped region is disposed in the second low doped region, the third heavily doped region comprising the second conductivity type and being coupled to a second power supply potential node.
摘要翻译：公开了一种用于防止静电放电的半导体器件。在一个实施例中，半导体器件包括设置在衬底中的第一低掺杂区域，设置在第一低掺杂区域内的第一重掺杂区域，第一重掺杂区域包括第一导电类型，第一低掺杂区域包括第二导电类型，第一和第二导电类型是相反的，第一重掺杂区域耦合到待保护的节点。所述半导体器件还包括耦合到第一电源电势节点的第二重掺杂区域，所述第二重掺杂区域由所述第一低掺杂区域的一部分与所述第一重掺杂区域分离，以及邻近设置的第二低掺杂区域第一低掺杂区域，第二低掺杂区域包括第一导电类型。第三重掺杂区域设置在第二低掺杂区域中，第三重掺杂区域包括第二导电类型并耦合到第二电源电位节点。

9. 发明申请

US20120002333A1 ESD Clamp Adjustment 有权
标题翻译： ESD钳位调整
公开(公告)号：US20120002333A1
公开(公告)日：2012-01-05
申请号：US12826983
申请日：2010-06-30
申请人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
发明人： Wolfgang Soldner , Gernot Langguth , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L23/60 , H01L2924/0002 , H03K17/08122 , H01L2924/00
摘要： Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.
摘要翻译：本公开的实施例涉及静电放电（ESD）保护技术。例如，一些实施例包括可变电阻器，其选择性地将来自第一电路节点的输入ESD脉冲的功率分流到第二电路节点并远离半导体器件。提供给可变电阻器的控制电压使得晶体管在只有亚阈值电流（如果有的话）流动的完全关闭模式之间改变; 其中最大量的电流流动的完全启动模式; 以及其中中间和时变量的电流流动的模拟模式。特别地，模拟模式允许ESD保护装置比先前可实现的更精确地分流功率，使得ESD保护装置可以保护半导体器件免受ESD脉冲。

10. 发明授权

US07943928B2 ESD protection structures for semiconductor components 有权
标题翻译：半导体元件的ESD保护结构
公开(公告)号：US07943928B2
公开(公告)日：2011-05-17
申请号：US11603340
申请日：2006-11-21
申请人： Michael Runde , Gernot Langguth , Klaus Roeschlau , Karlheinz Mueller
发明人： Michael Runde , Gernot Langguth , Klaus Roeschlau , Karlheinz Mueller
IPC分类号： H01L29/04
CPC分类号： H01L27/0255 , H01L29/861
摘要： An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.
摘要翻译： ESD保护结构包括被配置在半导体本体中的要被保护的结构。第一导电类型的区域设置在半导体本体内，并且沟道设置在半导体本体中并且延伸穿过第一导电类型的区域。第二导电类型的半导体设置在与第一导电类型的区域相邻的沟道内，使得第一导电类型的区域和第二导电类型的半导体形成二极管。第一导电类型的区域和第二导电类型的半导体中的至少一个电耦合到待保护的结构。

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