专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07195991B2 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip 有权
标题翻译：用于制造电磁辐射发射半导体芯片和相应的电磁辐射发射半导体芯片的方法
公开(公告)号：US07195991B2
公开(公告)日：2007-03-27
申请号：US10524186
申请日：2003-08-21
申请人： Christian Karnutsch , Peter Stauss , Klaus Streubel
发明人： Christian Karnutsch , Peter Stauss , Klaus Streubel
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L21/02381 , H01L21/02543 , H01L21/0262 , H01L33/0066
摘要： In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1−y)1−xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
摘要翻译：在制造基于AlGaInP的发射辐射半导体芯片的方法中，包括准备衬底的方法步骤，向衬底施加包括发光有源层的半导体层序列，并施加透明去耦层，其包括（Ga < 其中0.8 <= x和0≤y其中， <= 1，根据本发明提供的是，衬底由锗制成并且透明去耦层在低温下被施加。

2. 发明申请

US20060003467A1 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip 有权
标题翻译：用于制造电磁辐射发射半导体芯片和相应的电磁辐射发射半导体芯片的方法
公开(公告)号：US20060003467A1
公开(公告)日：2006-01-05
申请号：US10524186
申请日：2003-08-21
申请人： Christian Karnutsch , Peter Stauss , Klaus Streubei
发明人： Christian Karnutsch , Peter Stauss , Klaus Streubei
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L21/02381 , H01L21/02543 , H01L21/0262 , H01L33/0066
摘要： In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1-y)1-xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
摘要翻译：在制造基于AlGaInP的发射辐射半导体芯片的方法中，包括准备衬底的方法步骤，向衬底施加包括发光有源层的半导体层序列，并施加透明去耦层，其包括（Ga < 其中0.8 <= x和0≤y其中， <= 1，根据本发明提供的是，衬底由锗制成并且透明去耦层在低温下被施加。

3. 发明申请

US20100097609A1 Radiation Detector 有权
标题翻译：辐射检测器
公开(公告)号：US20100097609A1
公开(公告)日：2010-04-22
申请号：US12516831
申请日：2007-11-29
申请人： Arndt Jaeger , Peter Stauss , Klaus Streubel , Werner Kuhlmann
发明人： Arndt Jaeger , Peter Stauss , Klaus Streubel , Werner Kuhlmann
IPC分类号： G01J3/50
CPC分类号： G01J1/4228 , G01J1/0488 , G01J3/36 , G01J3/46 , G01J3/465 , G01J3/50 , G01J3/51 , G01J3/513 , G01J2003/507 , H01L31/105
摘要： A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals. At least one detector element includes a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region. The radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector. A channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.
摘要翻译：公开了一种具有检测器装置的检测器装置，其具有多个检测器元件，通过该检测器元件在放射线检测器的操作期间获得检测器信号，并且具有控制装置，其中检测器元件各自具有光谱灵敏度分布，并且适于产生信号。至少一个检测器元件包括化合物半导体材料，并且该检测器元件被设计用于检测可见光谱区域中的辐射。辐射检测器被设计成使得检测器元件的灵敏度分布用于形成辐射检测器的不同光谱灵敏度通道。可以使用检测器元件在这些灵敏度通道中产生分配给相应灵敏度通道的通道信号，并且控制装置被设计成使得不同通道信号对辐射检测器的检测器信号的贡献被不同地控制。

4. 发明授权

US08274657B2 Radiation detector 有权
标题翻译：辐射检测器
公开(公告)号：US08274657B2
公开(公告)日：2012-09-25
申请号：US12516831
申请日：2007-11-29
申请人： Arndt Jaeger , Peter Stauss , Klaus Streubel , Werner Kuhlmann
发明人： Arndt Jaeger , Peter Stauss , Klaus Streubel , Werner Kuhlmann
IPC分类号： G01J3/46
CPC分类号： G01J1/4228 , G01J1/0488 , G01J3/36 , G01J3/46 , G01J3/465 , G01J3/50 , G01J3/51 , G01J3/513 , G01J2003/507 , H01L31/105
摘要： A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.
摘要翻译：公开了一种具有检测器装置的检测器装置，其具有多个检测器元件，通过该检测器元件在放射线检测器的操作期间获得检测器信号，并且具有控制装置，其中检测器元件各自具有光谱灵敏度分布并且适于产生信号，至少一个检测器元件包括化合物半导体材料，并且该检测器元件被设计用于检测可见光谱区域中的辐射，辐射检测器被设计成使用检测器元件的灵敏度分布为了形成辐射检测器的不同光谱灵敏度通道，可以使用检测器元件在这些灵敏度通道中产生分配给相应灵敏度通道的通道信号，并且控制装置被设计成使得不同通道信号对检测器信号的贡献的辐射探测器是不同的控制 ed。

5. 发明授权

US07042013B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07042013B2
公开(公告)日：2006-05-09
申请号：US10647000
申请日：2003-08-22
申请人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
发明人： Norbert Linder , Peter Stauss , Mark Hampel , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L33/30 , H01L33/04
摘要： A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.
摘要翻译：一种具有包含n掺杂包层（18），p掺杂包层（20）和基于InGaAlP的有源层（14）的层结构的辐射发射半导体部件，其布置在n掺杂包层（18）和p掺杂包层（20）。扩散阻挡层（16）布置在有源层（14）和p掺杂覆层（20）之间。扩散停止层（16）由应变超晶格形成。

6. 发明申请

US20120132689A1 FASTENER DRIVING TOOL 审中-公开
标题翻译：紧固件驱动工具
公开(公告)号：US20120132689A1
公开(公告)日：2012-05-31
申请号：US13302270
申请日：2011-11-22
申请人： Tilo Dittrich , Thomas Sperrfechter , Heeb Norbert , Peter Stauss
发明人： Tilo Dittrich , Thomas Sperrfechter , Heeb Norbert , Peter Stauss
IPC分类号： B25C1/14 , B25C1/18
CPC分类号： B25C1/08
摘要： The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank (5), wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2) wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber (2), and wherein the metering device (4) comprises a movable displacement member (16) for ejecting the fuel out of the metering space (12), wherein the movement of the displacement member (16) is supplied by the pressure of the fuel as the energy source.
摘要翻译：本发明涉及一种紧固件驱动工具，其包括用于储存燃料（特别是液化石油气）的罐（5），连接到罐（5）的燃烧室（2），其中燃烧室（2）具有活动活塞用于为驱动柱塞供电;以及设置在罐（5）和燃烧室（2）之间的计量装置（4），其中定量的燃料可以通过计量装置（4）从计量空间（ 12）进入燃烧室（2），并且其中计量装置（4）包括用于将燃料排出计量空间（12）的可移动位移构件（16），其中位移构件（16）的运动是由作为能源的燃料的压力供给。

7. 发明申请

US20100025652A1 Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component 审中-公开
标题翻译：多量子阱结构，辐射发射半导体基座和辐射发射元件
公开(公告)号：US20100025652A1
公开(公告)日：2010-02-04
申请号：US12303249
申请日：2007-05-04
申请人： Peter Stauss
发明人： Peter Stauss
IPC分类号： H01L29/66
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A multiple quantum well structure (1) which comprises at least a first quantum well structure (2a) for generating radiation of a first wavelength (6) and at least a second quantum well structure (2b) for generating radiation of a second wavelength (7), which is greater than the first wavelength (6), and is provided for emission of radiation of a main wavelength (14), wherein the second wavelength (7) differs from the first wavelength (6) in such a way that the main wavelength (14) changes only by a predetermined maximum value in the event of a shift in the first wavelength (6) and the second wavelength (7). A radiation-emitting semiconductor body and a radiation-emitting component are furthermore described.
摘要翻译：一种多量子阱结构（1），其包括用于产生第一波长（6）的辐射的至少第一量子阱结构（2a）和用于产生第二波长（7）的至少第二量子阱结构（2b）），其大于第一波长（6），并且被提供用于发射主波长（14）的辐射，其中第二波长（7）与第一波长（6）不同，使得主波长在第一波长（6）和第二波长（7）的偏移的情况下，波长（14）仅改变预定的最大值。此外还描述了辐射发射半导体本体和发射辐射的部件。

8. 发明申请

US20050266588A1 Optoelectronic component and method of fabricating same 有权
标题翻译：光电子元件及其制造方法
公开(公告)号：US20050266588A1
公开(公告)日：2005-12-01
申请号：US11137680
申请日：2005-05-25
申请人： Peter Stauss
发明人： Peter Stauss
IPC分类号： H01L33/00 , H01L33/08 , H01L33/46 , H01L21/66
CPC分类号： H01L33/08 , H01L33/0079 , H01L33/46 , H01L2924/0002 , Y10S438/93 , H01L2924/00
摘要： The invention concerns an optoelectronic component comprising a layer stack that includes at least two active zones and a carrier that is applied to the layer stack. The invention further concerns a method of fabricating such an optoelectronic component.
摘要翻译：本发明涉及一种光电子部件，其包括层堆叠，其包括至少两个活动区域和施加到层叠层的载体。本发明还涉及制造这种光电子部件的方法。

9. 发明申请

US20130328101A1 METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP 有权
标题翻译：生产光电子半导体芯片的方法及其半导体芯片
公开(公告)号：US20130328101A1
公开(公告)日：2013-12-12
申请号：US13883782
申请日：2011-10-21
申请人： Peter Stauss , Alexander Behres
发明人： Peter Stauss , Alexander Behres
IPC分类号： H01L33/26
CPC分类号： H01L33/26 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L33/0066 , H01L33/0079 , H01L33/12 , H01L2924/0002 , H01L2933/0091 , H01S5/3201 , H01S2301/173 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.
摘要翻译：制造具有基于材料体系AlInGaP的半导体层堆叠的光电子半导体芯片的方法包括制备具有硅表面的生长衬底，在生长衬底上布置压缩松弛缓冲层堆叠，以及变质地外延生长半导体层堆叠在缓冲层堆叠上，半导体层堆叠具有产生辐射的活性层。

10. 发明申请

US20110233784A1 COMPOSITE SUBSTRATE FOR A SEMICONDUCTOR CHIP 有权
标题翻译：用于半导体芯片的复合基板
公开(公告)号：US20110233784A1
公开(公告)日：2011-09-29
申请号：US13128960
申请日：2009-11-09
申请人： Jürgen Moosburger , Peter Stauss , Andreas Plössl
发明人： Jürgen Moosburger , Peter Stauss , Andreas Plössl
IPC分类号： H01L23/48 , B32B9/00 , B32B15/00
CPC分类号： H01L21/02381 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02491 , H01L21/02529 , H01L21/02532 , H01L21/0254 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A composite substrate for a semiconductor chip includes a first covering layer containing a semiconductor material, a second covering layer, and a core layer arranged between the first covering layer and the second covering layer, wherein the core layer has a greater coefficient of thermal expansion than the covering layers.
摘要翻译：用于半导体芯片的复合衬底包括：第一覆盖层，其包含半导体材料，第二覆盖层和布置在第一覆盖层和第二覆盖层之间的芯层，其中芯层的热膨胀系数大于覆盖层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式