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1. 发明申请

US20080080582A1 Optically Pumped Semiconductor Device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US20080080582A1
公开(公告)日：2008-04-03
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/183 , H01S5/026
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

2. 发明授权

US07195991B2 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip 有权
标题翻译：用于制造电磁辐射发射半导体芯片和相应的电磁辐射发射半导体芯片的方法
公开(公告)号：US07195991B2
公开(公告)日：2007-03-27
申请号：US10524186
申请日：2003-08-21
申请人： Christian Karnutsch , Peter Stauss , Klaus Streubel
发明人： Christian Karnutsch , Peter Stauss , Klaus Streubel
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L21/02381 , H01L21/02543 , H01L21/0262 , H01L33/0066
摘要： In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1−y)1−xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
摘要翻译：在制造基于AlGaInP的发射辐射半导体芯片的方法中，包括准备衬底的方法步骤，向衬底施加包括发光有源层的半导体层序列，并施加透明去耦层，其包括（Ga < 其中0.8 <= x和0≤y其中， <= 1，根据本发明提供的是，衬底由锗制成并且透明去耦层在低温下被施加。

3. 发明授权

US07778300B2 Optically pumped semiconductor device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US07778300B2
公开(公告)日：2010-08-17
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

4. 发明申请

US20060003467A1 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip 有权
标题翻译：用于制造电磁辐射发射半导体芯片和相应的电磁辐射发射半导体芯片的方法
公开(公告)号：US20060003467A1
公开(公告)日：2006-01-05
申请号：US10524186
申请日：2003-08-21
申请人： Christian Karnutsch , Peter Stauss , Klaus Streubei
发明人： Christian Karnutsch , Peter Stauss , Klaus Streubei
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L21/02381 , H01L21/02543 , H01L21/0262 , H01L33/0066
摘要： In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1-y)1-xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
摘要翻译：在制造基于AlGaInP的发射辐射半导体芯片的方法中，包括准备衬底的方法步骤，向衬底施加包括发光有源层的半导体层序列，并施加透明去耦层，其包括（Ga < 其中0.8 <= x和0≤y其中， <= 1，根据本发明提供的是，衬底由锗制成并且透明去耦层在低温下被施加。

5. 发明授权

US07529284B2 Semiconductor optical pumping device for radiation emission and the production method thereof 失效
标题翻译：用于辐射发射的半导体光泵装置及其制造方法
公开(公告)号：US07529284B2
公开(公告)日：2009-05-05
申请号：US10526214
申请日：2003-08-13
申请人： Christian Karnutsch , Norbert Linder , Johann Luft , Stephan Lutgen , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Johann Luft , Stephan Lutgen , Wolfgang Schmid
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1082 , H01S5/141 , H01S5/18305 , H01S5/4056
摘要： An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).
摘要翻译：一种具有半导体本体的光学泵浦的辐射发射半导体器件，包括至少一个泵浦辐射源（20）和表面发射量子阱结构（11），泵浦辐射源（20）和量子阱结构（11））整体整合。泵浦辐射源（20）产生用于光学泵浦量子阱结构（11）的泵浦辐射（2），用于将形成在半导体中的量子阱结构（9）中的泵浦辐射（2）引入的凹部（10）泵浦辐射源（20）和量子阱结构（11）之间的主体。

6. 发明申请

US20060104327A1 Semiconductor optical pumping device for radiation emission and the production method thereof 失效
标题翻译：用于辐射发射的半导体光泵装置及其制造方法
公开(公告)号：US20060104327A1
公开(公告)日：2006-05-18
申请号：US10526214
申请日：2003-08-13
申请人： Christian Karnutsch , Norbert Linder , Johann Luft , Stephan Lutgen , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Johann Luft , Stephan Lutgen , Wolfgang Schmid
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1082 , H01S5/141 , H01S5/18305 , H01S5/4056
摘要： An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).
摘要翻译：一种具有半导体本体的光学泵浦的辐射发射半导体器件，包括至少一个泵浦辐射源（20）和表面发射量子阱结构（11），泵浦辐射源（20）和量子阱结构（11））整体整合。泵浦辐射源（20）产生用于光学泵浦量子阱结构（11）的泵浦辐射（2），用于将形成在半导体中的量子阱结构（9）中的泵浦辐射（2）引入的凹部（10）泵浦辐射源（20）和量子阱结构（11）之间的主体。

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