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1. 发明授权

US08613976B2 Method of forming silicon oxide containing films 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US08613976B2
公开(公告)日：2013-12-24
申请号：US13547876
申请日：2012-07-12
申请人： Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
发明人： Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

2. 发明申请

US20090232985A1 METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US20090232985A1
公开(公告)日：2009-09-17
申请号：US11908707
申请日：2006-03-17
申请人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
发明人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至4000℃的基板温度下在减压下将惰性气体进料到反应室中，在相同的温度和减压下，通过脉冲式在处理基板上吸收硅化合物将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物，含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

3. 发明授权

US08227032B2 Method of forming silicon oxide containing films 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US08227032B2
公开(公告)日：2012-07-24
申请号：US11908707
申请日：2006-03-17
申请人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
发明人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至400℃的基板温度下在减压下将惰性气体进料到反应室内，在相同的温度和减压下通过脉冲式在处理基板上吸收硅化合物将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物，含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

4. 发明申请

US20100104755A1 DEPOSITION METHOD OF TERNARY FILMS 审中-公开
标题翻译：三层膜的沉积方法
公开(公告)号：US20100104755A1
公开(公告)日：2010-04-29
申请号：US11993570
申请日：2005-06-29
申请人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
发明人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
IPC分类号： C23C16/34 , C23C16/30
CPC分类号： C23C16/34
摘要： Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl 5 , SEt 2 ), a silicon precursor (for example, SiH(NMe 2 ) 3 or (SiH 3 ) 3 N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H 2 ) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step.
摘要翻译：通过引入不含金属-C或金属-N-C键的金属源来制造含金属膜的方法（例如，TaCl 5，SEt 2 SUB）），硅前体（例如，SiH（NMe 3）3 3或（SiH 3 N 3）3） > N），诸如氨的氮前体，诸如一甲胺或乙烯的碳源和还原剂（例如H 2 N 2）加入到CVD室中并在基板的表面上使其反应以在一个步骤中制造含金属膜。

5. 发明申请

US20080121249A1 Method for Cleaning Film-Forming Apparatuses 审中-公开
标题翻译：清洗成膜装置的方法
公开(公告)号：US20080121249A1
公开(公告)日：2008-05-29
申请号：US10583641
申请日：2004-12-10
申请人： Julien Gatineau , Christian Dussarrat , Kazutaka Yanagita , Tomomi Fujita , Jean-Marc Girard
发明人： Julien Gatineau , Christian Dussarrat , Kazutaka Yanagita , Tomomi Fujita , Jean-Marc Girard
IPC分类号： B08B5/00
CPC分类号： B08B7/00 , C23C14/564 , C23C16/4405 , C23C16/4412
摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.
摘要翻译：为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在钌型沉积物的表面区域最少包含固体氧化钌。至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。

6. 发明授权

US07544389B2 Precursor for film formation and method for forming ruthenium-containing film 有权
标题翻译：用于成膜的前体和形成含钌膜的方法
公开(公告)号：US07544389B2
公开(公告)日：2009-06-09
申请号：US11576209
申请日：2005-09-26
申请人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
发明人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/06 , C23C16/40 , C23C16/45553 , H01L21/28556 , H01L21/7687 , H01L28/65
摘要： Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein:2x+2≦y+zand 2≦x≦15and z>yand t+u≧1 (t+u preferably equal to 1)x, y, and z being positive integers equal to or greater than 1, t and u being integers greater than or equal to zero.
摘要翻译：用于钌膜沉积的前体包括溶解在至少一种不可燃溶剂中的四氧化钌，优选具有通式C x H y F z O t N u的氟化溶剂，其中：2x + 2 <= y + z和2 <= x <= 15，z> y 和t + u> = 1（t + u优选等于1）x，y和z是等于或大于1的正整数，t和u是大于或等于零的整数。

7. 发明申请

US20080038465A1 Precursor For Film Formation And Method For Forming Ruthenium-Containing Film 有权
标题翻译：用于成膜的前体和形成含钌膜的方法
公开(公告)号：US20080038465A1
公开(公告)日：2008-02-14
申请号：US11576209
申请日：2005-09-26
申请人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
发明人： Christian Dussarrat , Kazutaka Yanagita , Julien Gatineau
IPC分类号： C23C16/00 , C04B28/36
CPC分类号： C23C16/45519 , C23C16/06 , C23C16/40 , C23C16/45553 , H01L21/28556 , H01L21/7687 , H01L28/65
摘要： Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein: 2x+2 y and t+u>=1 (t+u preferably equal to 1) x, y, z, t and u being positive integers.
摘要翻译：用于钌膜沉积的前体包括溶解在至少一种不可燃溶剂中的四氧化钌，优选具有通式C x H y F z O t N u的氟化溶剂，其中：1/2×2 + = y + z和2≤x≤15 和z> y和t + u> = 1（t + u优选等于1）x，y，z，t和u是正整数。

8. 发明授权

US08557339B2 Method for the deposition of a Ruthenium containing film 有权
标题翻译：沉积含钌膜的方法
公开(公告)号：US08557339B2
公开(公告)日：2013-10-15
申请号：US12520116
申请日：2007-12-20
申请人： Julien Gatineau , Christian Dussarrat
发明人： Julien Gatineau , Christian Dussarrat
IPC分类号： C23C16/18
CPC分类号： C07F15/0046 , C23C16/18
摘要： Disclosed are processes for depositing ruthenium containing films on substrates using an organometallic compound having the following formula: L-Ru—X (I) wherein L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted.
摘要翻译：公开了使用具有下式的有机金属化合物在底物上沉积含钌膜的方法：其中L是具有至少六个环状碳原子的非芳族环状不饱和烃配体（L）的L-Ru-X（I）所述循环是未取代的或取代的，X是与（L）相同或不同的非芳族环状不饱和烃配体，具有至少六个环状碳原子，所述周期是未取代的或被取代的，或环状或非环状的共轭二烯烃配体，五至十个碳原子，所述烃配体是未取代的或被取代的。

9. 发明申请

US20130059078A1 USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS 有权
标题翻译：作为前体的四氢呋喃的使用和薄膜沉积的反应物
公开(公告)号：US20130059078A1
公开(公告)日：2013-03-07
申请号：US13580706
申请日：2010-12-22
申请人： Julien Gatineau , Christian Dussarrat
发明人： Julien Gatineau , Christian Dussarrat
IPC分类号： C23C16/18 , C23C16/40
CPC分类号： C23C16/40 , C23C16/18 , C23C16/45531 , H01L21/02197 , H01L21/02304
摘要： Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices.
摘要翻译：公开了使用含钌前驱物形成用于制造半导体，光伏，LCD-TFT或平板型器件的含钌膜的原子层沉积方法。

10. 发明授权

US08309174B2 Heteroleptic iridium precursors to be used for the deposition of iridium-containing films 有权
标题翻译：用于沉积含铱膜的异铱前体
公开(公告)号：US08309174B2
公开(公告)日：2012-11-13
申请号：US12424265
申请日：2009-04-15
申请人： Julien Gatineau , Christian Dussarrat
发明人： Julien Gatineau , Christian Dussarrat
IPC分类号： C23C16/18 , C07F15/00
CPC分类号： C07F17/02 , C23C16/18 , C23C16/45553
摘要： The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.
摘要翻译：本发明提供了一种用于在基材上沉积含铱膜的方法，该方法包括以下步骤：在反应器中提供至少一个基材; 将具有下式的至少一种含有铱的前体引入反应器中：其中A等于1或2，i）当A为1时，X为二烯基配体，Y为二烯配体; ii）当A为2时，a）X为二烯基配体，Y选自CO和乙烯配体，b）X为选自H，烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基，烷基甲硅烷基酰胺，烷基氨基和氟代烷基的配体，以及每个Y是二烯配体，和c）X是二烯基配体，Y是二烯配体; 在等于或大于100℃的温度下使反应器中的至少一种含铱前体反应; 以及将由所述至少一种含铱前体的反应形成的含铱膜沉积在所述至少一个基底上。

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