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1. 发明授权

US08227032B2 Method of forming silicon oxide containing films 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US08227032B2
公开(公告)日：2012-07-24
申请号：US11908707
申请日：2006-03-17
申请人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
发明人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至400℃的基板温度下在减压下将惰性气体进料到反应室内，在相同的温度和减压下通过脉冲式在处理基板上吸收硅化合物将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物，含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

2. 发明申请

US20070190807A1 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US20070190807A1
公开(公告)日：2007-08-16
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

3. 发明申请

US20050048204A1 Method for the fabrication of silicon nitride, silicon oxynitride, and silicon oxide films by chemical vapor deposition 审中-公开
标题翻译：通过化学气相沉积制造氮化硅，氮氧化硅和氧化硅膜的方法
公开(公告)号：US20050048204A1
公开(公告)日：2005-03-03
申请号：US10497191
申请日：2002-07-26
申请人： Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： C23C16/42 , C23C16/30 , C23C16/34 , C23C16/40 , H01L21/318 , C23C16/00
CPC分类号： C23C16/308 , C23C16/345 , C23C16/402
摘要： At least one compound selected from the group consisting of silane compounds with the formulas Si(NHRi)4 and SiH(NHRi)3 (each Ri in each of the preceding formulas is independently selected from C1 to C4 hydrocarbyl) is used as a precursor for silicon nitride, silicon oxynitride, and silicon oxide films.
摘要翻译：使用选自具有式Si（NHRi）4和SiH（NHRi）3的硅烷化合物（前述各式中的每个R 1独立地选自C 1至C 4烃基）的至少一种化合物作为前体氮化硅，氮氧化硅和氧化硅膜。

4. 发明授权

US06376712B2 Process for producing trifluoromethylbenzylamines 失效
标题翻译：制备三氟甲基苄胺的方法
公开(公告)号：US06376712B2
公开(公告)日：2002-04-23
申请号：US09833211
申请日：2001-04-12
申请人： Satoru Narizuka , Eri Tsukada , Takashi Kume
发明人： Satoru Narizuka , Eri Tsukada , Takashi Kume
IPC分类号： C07C21100
CPC分类号： C07C209/40 , C07C211/29
摘要： The present invention relates to a process for producing a trifluoromethylbenzylamine represented by the general formula (1), where R1 represents hydrogen atom, a halogen atom selected from the group consisting of fluorine, chlorine, bromine and iodine, or trifluoromethyl group. This process includes the step of reducing an oxime by hydrogen in an organic solvent in the presence of a catalyst and ammonia. The oxime is represented by the general formula (2), where R1 is defined as above, and R2 represents hydrogen atom, an alkyl group or an aralkyl group. With this process, the trifluoromethylbenzylamine can be produced with high yield.
摘要翻译：本发明涉及由通式（1）表示的三氟甲基苄胺的制备方法，其中R1表示氢原子，选自氟，氯，溴和碘的卤素原子或三氟甲基。该方法包括在催化剂和氨的存在下，通过有机溶剂中的氢还原肟的步骤。肟由通式（2）表示，其中R 1如上定义，R 2表示氢原子，烷基或芳烷基。通过该方法，可以高产率制备三氟甲基苄胺。

5. 发明申请

US20090232985A1 METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US20090232985A1
公开(公告)日：2009-09-17
申请号：US11908707
申请日：2006-03-17
申请人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
发明人： Christian Dussarrat , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至4000℃的基板温度下在减压下将惰性气体进料到反应室中，在相同的温度和减压下，通过脉冲式在处理基板上吸收硅化合物将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物，含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

6. 发明授权

US06175041B1 Process for producing trifluoromethylbenzylamines 失效
标题翻译：制备三氟甲基苄胺的方法
公开(公告)号：US06175041B1
公开(公告)日：2001-01-16
申请号：US09521009
申请日：2000-03-07
申请人： Seiji Takasaki , Takahiro Koizumi , Takashi Kume , Michio Ishida , Satoru Narizuka , Eri Tsukada
发明人： Seiji Takasaki , Takahiro Koizumi , Takashi Kume , Michio Ishida , Satoru Narizuka , Eri Tsukada
IPC分类号： C07C20900
CPC分类号： C07C209/48 , C07C211/29
摘要： The invention relates to a process for producing a trifluoromethylbenzylamine represented by the following general formula (1). This process includes hydrogenating a trifliuoromethylbenzonitrile represented by the following general formula (2) by hydrogen in an organic solvent in the presence of ammonia, using a Raney catalyst, where each R independently represents a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine, an alkyl group having a carbon atom number of 1-4, an alkoxy group having a carbon atom number of 1-4, an amino group, a hydroxyl group or a trifluoromethyl group, and n represents an integer from 0 to 4, where R and n are defined as above. With this process, it is possible to obtain the trifluoromethylbenzylamine easily and inexpensively at an extremely high yield.
摘要翻译：本发明涉及一种由以下通式（1）表示的三氟甲基苄胺的制备方法。该方法包括使用阮内催化剂，在氨的存在下，在有机溶剂中，用氢气氢化由以下通式（2）表示的三氟甲基苄腈，其中每个R独立地表示选自氟，氯，溴的卤素和碘，碳原子数为1-4的烷基，碳原子数为1-4的烷氧基，氨基，羟基或三氟甲基，n为0-4的整数其中R和n如上定义。通过该方法，可以以极高的收率容易且廉价地得到三氟甲基苄基胺。

7. 发明授权

US08613976B2 Method of forming silicon oxide containing films 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US08613976B2
公开(公告)日：2013-12-24
申请号：US13547876
申请日：2012-07-12
申请人： Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
发明人： Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

8. 发明申请

US20120276292A1 METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
标题翻译：形成含氧化硅膜的方法
公开(公告)号：US20120276292A1
公开(公告)日：2012-11-01
申请号：US13547876
申请日：2012-07-12
申请人： Christian DUSSARRAT , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
发明人： Christian DUSSARRAT , Julien Gatineau , Kazutaka Yanagita , Eri Tsukada , Ikuo Suzuki
IPC分类号： C23C16/40
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02219 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
摘要翻译：一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

9. 发明申请

US20070160774A1 Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition 审中-公开
标题翻译：通过化学气相沉积法生产氮化硅膜和氧氮化硅膜的方法
公开(公告)号：US20070160774A1
公开(公告)日：2007-07-12
申请号：US10587427
申请日：2005-01-19
申请人： Eri Tsukada , Christian Dussarrat , Jean-Marc Girard
发明人： Eri Tsukada , Christian Dussarrat , Jean-Marc Girard
IPC分类号： H05H1/24 , H01L21/31
CPC分类号： C23C16/308 , C23C16/34 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/02222 , H01L21/02271
摘要： To provide a CVD-based method for the relatively low temperature production of silicon nitride films and silicon oxynitride films that exhibit excellent film properties wherein said method is not accompanied by the production of ammonium chloride. Gaseous aminosilane such as tris(isopropylamino)silane and a gaseous hydrazine compound such as dimethylhydrazine are fed into a chemical vapor deposition reaction chamber that holds at least one substrate and silicon nitride film is formed on the substrate by reacting the two gases in said chemical vapor deposition reaction chamber.
摘要翻译：为了提供用于相对低温生产氮化硅膜和氧氮化硅膜的基于CVD的方法，其表现出优异的膜性质，其中所述方法不伴随氯化铵的生产。将气态氨基硅烷如三（异丙基氨基）硅烷和气态肼化合物如二甲基肼进料到化学气相沉积反应室中，所述化学气相沉积反应室保持至少一个基底，并且通过使所述化学气体中的两种气体反应在基底上形成氮化硅膜沉积反应室。

10. 发明授权

US06506951B1 Process for producing brominated trifluoromethylbenzenes 失效
标题翻译：溴化三氟甲基苯的制备方法
公开(公告)号：US06506951B1
公开(公告)日：2003-01-14
申请号：US09551912
申请日：2000-04-19
申请人： Eri Tsukada , Mikio Ujiie , Shozo Kaneda , Satoru Narizuka , Takashi Kume
发明人： Eri Tsukada , Mikio Ujiie , Shozo Kaneda , Satoru Narizuka , Takashi Kume
IPC分类号： C07C2200
CPC分类号： B01J27/135 , B01J27/10 , B01J27/128 , C07C17/12 , C07C25/13
摘要： The invention relates to a process for producing a brominated trifluoromethylbenzene represented by the general formula (1). This process includes brominating in a liquid or gas phase a trifluoromethylbenzene, represented by the general formula (2), by bromine in the presence of a catalyst under a condition that the bromine is coexistent with chlorine, where n is an integer of 1-2, and m is an integer of 1-3 where n is an integer of 1-2. The catalyst is preferably iron chloride in the case of the bromination in a liquid phase. It is preferably activated carbon carrying thereon iron chloride in the case of the bromination in a gas phase. The trifluoromethylbenzene is turned to the brominated trifluoromethylbenzene with high reactivity and high yield.
摘要翻译：本发明涉及由通式（1）表示的溴代三氟甲基苯的制备方法。该方法包括在液相或气相中溴在溴中与氯共存的条件下，在溴存在下，用溴在通式（2）表示的三氟甲基苯中溴化，其中n为1-2的整数，m为1-3的整数，其中n为1-2的整数。在液相中溴化的情况下，催化剂优选为氯化铁。在气相溴化的情况下，优选载有氯化铁的活性炭。三氟甲基苯转化为溴化三氟甲基苯，反应性高，产率高。

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