专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060079086A1 Apparatus and method of forming silicide in a localized manner 失效
标题翻译：以局部方式形成硅化物的装置和方法
公开(公告)号：US20060079086A1
公开(公告)日：2006-04-13
申请号：US10964157
申请日：2004-10-12
申请人： Christian Boit , Theodore Lundquist , Chun-Cheng Tsao , Uwe Kerst , Stephan Schoemann , Peter Sadewater
发明人： Christian Boit , Theodore Lundquist , Chun-Cheng Tsao , Uwe Kerst , Stephan Schoemann , Peter Sadewater
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
摘要翻译：在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。

2. 发明授权

US07439168B2 Apparatus and method of forming silicide in a localized manner 失效
标题翻译：以局部方式形成硅化物的装置和方法
公开(公告)号：US07439168B2
公开(公告)日：2008-10-21
申请号：US10964157
申请日：2004-10-12
申请人： Christian Boit , Theodore R. Lundquist , Chun-Cheng Tsao , Uwe Jürgen Kerst , Stephan Schoemann , Peter Sadewater
发明人： Christian Boit , Theodore R. Lundquist , Chun-Cheng Tsao , Uwe Jürgen Kerst , Stephan Schoemann , Peter Sadewater
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/31749 , H01L21/76892 , H01L21/76898
摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.
摘要翻译：在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。

3. 发明申请

US20070293052A1 APPARATUS AND METHOD FOR OPTICAL INTERFERENCE FRINGE BASED INTEGRATED CIRCUIT PROCESSING 有权
标题翻译：基于光干扰法的基于集成电路处理的装置和方法
公开(公告)号：US20070293052A1
公开(公告)日：2007-12-20
申请号：US11754466
申请日：2007-05-29
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore Lundquist , Rajesh Jain
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/30466 , H01J2237/31749 , H01L22/12 , H01L22/26
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光线指向沟槽的地板。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。作为检测到的条纹图案的函数可以控制铣削。

4. 发明申请

US20060188797A1 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US20060188797A1
公开(公告)日：2006-08-24
申请号：US11362240
申请日：2006-02-24
申请人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
发明人： Erwan Roy , Chun-Cheng Tsao , Theodore Lundquist
IPC分类号： G03C5/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B23K26/03 , B23K26/032 , B82Y10/00 , B82Y40/00
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光照在沟槽的地板上。当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。作为检测干涉条纹的功能，可以控制处理。

5. 发明授权

US07245133B2 Integration of photon emission microscope and focused ion beam 失效
标题翻译：光子发射显微镜和聚焦离子束的集成
公开(公告)号：US07245133B2
公开(公告)日：2007-07-17
申请号：US10985808
申请日：2004-11-09
申请人： Chun-Cheng Tsao , Eugene Delenia
发明人： Chun-Cheng Tsao , Eugene Delenia
IPC分类号： G01R31/302 , G01L21/30
CPC分类号： G01R31/302
摘要： An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure Analysis. An iterative method is described for identifying and localizing fault sites on the circuit.
摘要翻译：用于对集成电路执行故障分析的集成FIB / PEM装置和方法。通过将光子发射显微镜集成到聚焦离子束系统中来实现原位故障分析，从而提高故障分析的吞吐量和效率。描述了用于识别和定位电路上的故障位置的迭代方法。

6. 发明授权

US06672947B2 Method for global die thinning and polishing of flip-chip packaged integrated circuits 有权
标题翻译：用于倒装芯片封装集成电路的全局模具稀疏和抛光的方法
公开(公告)号：US06672947B2
公开(公告)日：2004-01-06
申请号：US09924736
申请日：2001-08-07
申请人： Chun-Cheng Tsao , John Valliant
发明人： Chun-Cheng Tsao , John Valliant
IPC分类号： B24B100
CPC分类号： B24B49/12 , B24B7/228 , B24B37/042
摘要： A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.
摘要翻译：一种可靠，廉价的“背面”稀释工艺，能够将集成电路裸片全局变薄至目标厚度为10微米，并保持至少80％的产量，用于封装芯片的芯片修复和/或故障分析。倒装芯片封装的裸片在其背面露出并安装在背面暴露的研磨机上。模具的厚度在模具上的至少五个位置处被测量。研磨机将模具的暴露表面研磨到稍大于目标厚度的厚度。模具的暴露表面被抛光。再次以高精度光学测量模具的厚度。基于收集的厚度数据，确定用于进一步研磨和抛光暴露表面的合适的机器操作参数。进行进一步研磨和抛光。重复这些步骤，直到达到目标厚度。

7. 发明授权

US07036109B1 Imaging integrated circuits with focused ion beam 有权
标题翻译：具有聚焦离子束的成像集成电路
公开(公告)号：US07036109B1
公开(公告)日：2006-04-25
申请号：US10274431
申请日：2002-10-17
申请人： Chun-Cheng Tsao , Theodore R. Lundquist , William Thompson , Erwan Le Roy , Eugene A. Delenia
发明人： Chun-Cheng Tsao , Theodore R. Lundquist , William Thompson , Erwan Le Roy , Eugene A. Delenia
IPC分类号： G06F17/50
CPC分类号： H01J37/3056 , H01J2237/3174
摘要： Methods and apparatus for integrated circuit diagnosis, characterization or modification using a focused ion beam. A method for editing an integrated circuit includes acquiring an image of structures of an integrated circuit by applying a focused ion beam to an outer surface of the integrated circuit to visualize structures beneath the outer surface of the integrated circuit. The method includes using the image to find a location of a circuit element in the integrated circuit and then performing one or more editing operations on the circuit element by applying a focused ion beam to the location found.
摘要翻译：使用聚焦离子束进行集成电路诊断，表征或修改的方法和装置。一种用于编辑集成电路的方法包括通过将集中的离子束施加到集成电路的外表面来获取集成电路的结构图像，以便可视化集成电路外表面下方的结构。该方法包括使用图像来找到集成电路中的电路元件的位置，然后通过将聚焦离子束施加到所找到的位置来对电路元件执行一个或多个编辑操作。

8. 发明申请

US20060012385A1 Integration of photon emission microscope and focused ion beam 失效
标题翻译：光子发射显微镜和聚焦离子束的集成
公开(公告)号：US20060012385A1
公开(公告)日：2006-01-19
申请号：US10985808
申请日：2004-11-09
申请人： Chun-Cheng Tsao , Eugene Delenia
发明人： Chun-Cheng Tsao , Eugene Delenia
IPC分类号： G01R31/302
CPC分类号： G01R31/302
摘要： An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure Analysis. An iterative method is described for identifying and localizing fault sites on the circuit.
摘要翻译：用于对集成电路执行故障分析的集成FIB / PEM装置和方法。通过将光子发射显微镜集成到聚焦离子束系统中来实现原位故障分析，从而提高故障分析的吞吐量和效率。描述了用于识别和定位电路上的故障位置的迭代方法。

9. 发明授权

US07884024B2 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US07884024B2
公开(公告)日：2011-02-08
申请号：US11754466
申请日：2007-05-29
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist , Rajesh Kumar Jain
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist , Rajesh Kumar Jain
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/228 , H01J37/3056 , H01J2237/2482 , H01J2237/30466 , H01J2237/31749 , H01L22/12 , H01L22/26
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of the same, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection and/or characteristics of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Resulting fringes will be a function, in part, of the thickness and/or profile of the trench floor. Milling may be controlled as a function of the detected fringe patterns.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，一个或多个波长的光被引导到集成电路上，并且基于干涉条纹和其特性的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理，作为干涉条纹的检测和/或特征的函数。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光线指向沟槽的地板。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。所产生的条纹将部分地是沟槽地板的厚度和/或轮廓的函数。作为检测到的条纹图案的函数可以控制铣削。

10. 发明授权

US07697146B2 Apparatus and method for optical interference fringe based integrated circuit processing 有权
标题翻译：用于光干涉条纹集成电路处理的装置和方法
公开(公告)号：US07697146B2
公开(公告)日：2010-04-13
申请号：US11362240
申请日：2006-02-24
申请人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist
发明人： Erwan Le Roy , Chun-Cheng Tsao , Theodore R. Lundquist
IPC分类号： G01B11/02
CPC分类号： H01J37/3174 , B23K26/03 , B23K26/032 , B82Y10/00 , B82Y40/00
摘要： An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection of interference fringes. A charged particle beam trench milling operation is performed in or on the substrate of an integrated circuit. Light is directed on the floor of the trench. When the floor approaches the underlying circuit structures, some light is reflected from the floor of the trench and some light penetrates the substrate and is reflected off the underlying circuit structures. Interference fringes may be formed from the constructive or destructive interference between the light reflected from the floor and the light from the circuit structures. Processing may be controlled as function of the detection of interference fringes.
摘要翻译：一种使用光学干涉条纹处理集成电路的装置和方法。在处理期间，光被引导到集成电路上，并且基于干涉条纹的检测，可以控制进一步的处理。一种实施方案涉及集成电路的带电粒子束处理作为干涉条纹检测的功能。在集成电路的衬底中或其上执行带电粒子束沟槽铣削操作。光照在沟槽的地板上。当地板接近下面的电路结构时，一些光从沟槽的底部反射，并且一些光穿透衬底并从下面的电路结构反射。干涉条纹可以由从地板反射的光与来自电路结构的光之间的建构性或破坏性干扰形成。作为检测干涉条纹的功能，可以控制处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式