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    • 1. 发明授权
    • Method and apparatus for global die thinning and polishing of flip-chip packaged integrated circuits
    • 用于倒装芯片封装集成电路的全局模具稀疏和抛光的方法和装置
    • US06939209B2
    • 2005-09-06
    • US10693310
    • 2003-10-24
    • Chun-Cheng TsaoJohn Valliant
    • Chun-Cheng TsaoJohn Valliant
    • B24B1/00B24B7/22B24B37/04B24B49/12
    • B24B49/12B24B7/228B24B37/042
    • A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.
    • 一种可靠,廉价的“背面”稀释方法及其设备,能够将集成电路管芯全局变薄至目标厚度为10微米,并保持至少80%的产量,用于芯片修复和/或故障分析 包装模具 倒装芯片封装的裸片在其背面露出并安装在背面暴露的研磨机上。 模具的厚度在模具上的至少五个位置处被测量。 研磨机将模具的暴露表面研磨到稍大于目标厚度的厚度。 模具的暴露表面被抛光。 再次以高精度光学测量模具的厚度。 基于收集的厚度数据,确定用于进一步研磨和抛光暴露表面的合适的机器操作参数。 进行进一步研磨和抛光。 重复这些步骤,直到达到目标厚度。
    • 3. 发明授权
    • Method for global die thinning and polishing of flip-chip packaged integrated circuits
    • 用于倒装芯片封装集成电路的全局模具稀疏和抛光的方法
    • US06672947B2
    • 2004-01-06
    • US09924736
    • 2001-08-07
    • Chun-Cheng TsaoJohn Valliant
    • Chun-Cheng TsaoJohn Valliant
    • B24B100
    • B24B49/12B24B7/228B24B37/042
    • A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.
    • 一种可靠,廉价的“背面”稀释工艺,能够将集成电路裸片全局变薄至目标厚度为10微米,并保持至少80%的产量,用于封装芯片的芯片修复和/或故障分析。 倒装芯片封装的裸片在其背面露出并安装在背面暴露的研磨机上。 模具的厚度在模具上的至少五个位置处被测量。 研磨机将模具的暴露表面研磨到稍大于目标厚度的厚度。 模具的暴露表面被抛光。 再次以高精度光学测量模具的厚度。 基于收集的厚度数据,确定用于进一步研磨和抛光暴露表面的合适的机器操作参数。 进行进一步研磨和抛光。 重复这些步骤,直到达到目标厚度。