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1. 发明授权

US08604377B2 Automatic transfer switch 有权
标题翻译：自动转接开关
公开(公告)号：US08604377B2
公开(公告)日：2013-12-10
申请号：US13183702
申请日：2011-07-15
申请人： Choong-Hyun Lee , Jung-Woo Lee
发明人： Choong-Hyun Lee , Jung-Woo Lee
IPC分类号： H01H33/08
CPC分类号： H01H1/22 , H01H1/5822 , H01H2009/365 , H01H2300/018 , H02J9/06
摘要： Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.
摘要翻译：公开了一种自动转印开关。根据本发明的示例性实施例，自动转换开关通过移动一对可动接触器而从商用电源端子和应急电源端子交替地供电以加载端子，其中，所述一对可动接触器中的至少一个是一体的通过由柔性材料制成的电线与商业电源终端或应急电源终端形成。

2. 发明申请

US20130015044A1 AUTOMATIC TRANSFER SWITCH 有权
标题翻译：自动转换开关
公开(公告)号：US20130015044A1
公开(公告)日：2013-01-17
申请号：US13183702
申请日：2011-07-15
申请人： Choong-Hyun LEE , Jung-Woo Lee
发明人： Choong-Hyun LEE , Jung-Woo Lee
IPC分类号： H01H63/00
CPC分类号： H01H1/22 , H01H1/5822 , H01H2009/365 , H01H2300/018 , H02J9/06
摘要： Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.
摘要翻译：公开了一种自动转印开关。根据本发明的示例性实施例，自动转换开关通过移动一对可动接触器而从商用电源端子和应急电源端子交替地供电以加载端子，其中，所述一对可动接触器中的至少一个是一体的通过由柔性材料制成的电线与商业电源终端或应急电源终端形成。

3. 发明授权

US08110255B2 Method for preparation of hybrid comprising magnetite nanoparticles and carbon nitride nanotubes 有权
标题翻译：制备包含磁铁矿纳米颗粒和碳纳米管的杂化物的方法
公开(公告)号：US08110255B2
公开(公告)日：2012-02-07
申请号：US12764467
申请日：2010-04-21
申请人： Jeung-Ku Kang , Jung-Woo Lee , Ravindranath Viswan , Yoon-Jung Choi , Yeob Lee , Se-Yun Kim
发明人： Jeung-Ku Kang , Jung-Woo Lee , Ravindranath Viswan , Yoon-Jung Choi , Yeob Lee , Se-Yun Kim
IPC分类号： B05D3/00 , H05H1/24
CPC分类号： C01B21/0605 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2006/42
摘要： The present invention discloses a method for preparation of a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, comprising: preparing carbon nitride nanotubes by plasma chemical vapor deposition (CVD); dissolving the prepared carbon nitride nanotubes in triethyleneglycol to form solution and adding Fe (acetylacetonate)3 to the solution to obtain a mixture; and heating and cooling the mixture to form a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, in which the carbon nitride nanotubes are doped with magnetite nanoparticles.
摘要翻译：本发明公开了一种制备包含磁铁矿纳米颗粒和碳纳米管的杂化物的方法，包括：通过等离子体化学气相沉积（CVD）制备碳纳米管; 将制备的碳纳米管溶解在三乙二醇中以形成溶液，并向溶液中加入Fe（乙酰丙酮化物）3以获得混合物; 并加热和冷却混合物以形成包含磁铁矿纳米颗粒和碳氮化物纳米管的混合物，其中氮化碳纳米管掺杂有磁铁矿纳米颗粒。

4. 发明授权

US08045376B2 Flash memory device with multi level cell and burst access method therein 失效
标题翻译：具有多级单元和突发存取方法的闪存器件
公开(公告)号：US08045376B2
公开(公告)日：2011-10-25
申请号：US12615374
申请日：2009-11-10
申请人： Jung-Woo Lee , Jae-Yong Jeong
发明人： Jung-Woo Lee , Jae-Yong Jeong
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G11C11/5628 , G11C2211/5633
摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
摘要翻译：一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字，重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

5. 发明申请

US20110256316A1 Method for Patterning Nanomaterial Using Solution Evaporation 有权
标题翻译：使用溶液蒸发形成纳米材料的方法
公开(公告)号：US20110256316A1
公开(公告)日：2011-10-20
申请号：US13140879
申请日：2009-02-03
申请人： Jeung-Ku Kang , Kyung-Min Choi , Jung-Hoon Choi , Weon-Ho Shin , Jung-Woo Lee , Hyung-Mo Jeong
发明人： Jeung-Ku Kang , Kyung-Min Choi , Jung-Hoon Choi , Weon-Ho Shin , Jung-Woo Lee , Hyung-Mo Jeong
IPC分类号： B05D5/02 , B82Y40/00
CPC分类号： B81C1/00031 , B82Y30/00 , B82Y40/00 , C01B32/174
摘要： Disclosed is a method for patterning a nanomaterial using solution evaporation. More particularly, the method for patterning a nanomaterial using solution evaporation includes; coating the nanomaterial with a polymer material and uniformly dispersing the coated nanomaterial in a solvent to prepare a solution containing the nanomaterial, and pouring the nanomaterial-containing solution on a substrate, enabling the nanomaterial to be patterned after evaporation of the solvent.
摘要翻译：公开了使用溶液蒸发来对纳米材料进行图案化的方法。更具体地，使用溶液蒸发来构图纳米材料的方法包括：用聚合物材料涂覆纳米材料，并将涂覆的纳米材料均匀分散在溶剂中以制备含有纳米材料的溶液，并将含纳米材料的溶液倾倒在基材上，使纳米材料在蒸发溶剂后进行图案化。

6. 发明授权

US07663226B2 Heat-releasing printed circuit board and semiconductor chip package 失效
标题翻译：散热印刷电路板和半导体芯片封装
公开(公告)号：US07663226B2
公开(公告)日：2010-02-16
申请号：US12010643
申请日：2008-01-28
申请人： Seung-Hyun Cho , Seung-Chul Kim , Sang-Soo Lee , Jung-Woo Lee
发明人： Seung-Hyun Cho , Seung-Chul Kim , Sang-Soo Lee , Jung-Woo Lee
IPC分类号： H01L23/12 , H01L23/053
CPC分类号： H05K3/285 , B82Y10/00 , H01L23/373 , H01L2224/16 , H01L2224/73204 , H01L2924/01019 , H01L2924/15311 , H05K1/0209 , H05K3/3452 , H05K2201/026 , Y10S977/742
摘要： A heat-releasing printed circuit board and semiconductor chip package are disclosed. The heat-releasing printed circuit board includes an insulation layer, on a surface of which a circuit pattern is formed, and a solder resist, which is stacked on the insulation layer, where the solder resist contains carbon nanotubes. The heat-releasing printed circuit board allows the heat generated in a semiconductor chip to be dispersed in several directions of the board or package, to improve heat-releasing property.
摘要翻译：公开了一种散热印刷电路板和半导体芯片封装。散热印刷电路板包括在其表面上形成电路图案的绝缘层和层叠在绝缘层上的阻焊剂，其中阻焊剂包含碳纳米管。散热印刷电路板允许在半导体芯片中产生的热分散在板或封装的多个方向上，以提高散热性能。

7. 发明申请

US20090004091A1 Carbonnitride nanotubes with nano-sized pores on their stems, their preparation method and control method of size and quantity of pore thereof 有权
标题翻译：碳纳米管在其茎上具有纳米尺寸的孔，其制备方法和孔的尺寸和数量的控制方法
公开(公告)号：US20090004091A1
公开(公告)日：2009-01-01
申请号：US11819700
申请日：2007-06-28
申请人： Jeung-Ku Kang , Jai-Young Lee , Hyun-Seok Kim , Seong-Ho Yang , Kyu-Sung Han , Se-Yun Kim , Jung-Woo Lee , Weon-Ho Sin
发明人： Jeung-Ku Kang , Jai-Young Lee , Hyun-Seok Kim , Seong-Ho Yang , Kyu-Sung Han , Se-Yun Kim , Jung-Woo Lee , Weon-Ho Sin
IPC分类号： C01C3/00
CPC分类号： C01B21/0605 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/36 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2006/14 , C01P2006/16 , C23C16/347 , Y10S977/734
摘要： Disclosed are carbon nitride (C1-xNx) nanotubes with nano-sized pores on their stems, their preparation method and control method of size and quantity of pores thereof.The present invention further has an object of providing the C1-xNx nanotube with pores having the size of not more than 1 nm over structure of the nanotube and a method for preparing the same.Another object of the present invention is to provide the control method of the size and quantity of pores with size of not more than 1 nm in the preparation of the C1-xNx nanotube with the pores over structure of the nanotube.The present invention can produce the C1-xNx nanotube with nano-sized pores by reacting hydrocarbon gas and nitrogen gas through plasma CVD in the presence of metal catalyst particles, wherein x ranges from 0.001 to 0.2.
摘要翻译：公开了其茎上具有纳米尺寸孔的碳氮化物（C1-xNx）纳米管及其孔的尺寸和数量的制备方法和控制方法。本发明的目的还在于提供具有尺寸不超过纳米管结构的1nm以上的孔的C1-xNx纳米管及其制备方法。本发明的另一个目的是提供在制备具有纳米管结构的孔的C1-xNx纳米管的尺寸不超过1nm的孔的尺寸和数量的控制方法。本发明可以在金属催化剂颗粒存在的情况下通过等离子体CVD与烃气体和氮气反应来生产具有纳米尺寸孔的C1-xNx纳米管，其中x为0.001至0.2。

8. 发明申请

US20080008824A1 Method for manufacturing printed circuit board using imprinting 有权
标题翻译：使用印记制造印刷电路板的方法
公开(公告)号：US20080008824A1
公开(公告)日：2008-01-10
申请号：US11819720
申请日：2007-06-28
申请人： Jae-Choon Cho , Myeong-Ho Hong , Senug-Hyun Ra , Hyuk-Soo Lee , Jeong-Bok Kwak , Jung-Woo Lee , Choon-Keun Lee , Sang-Moon Lee
发明人： Jae-Choon Cho , Myeong-Ho Hong , Senug-Hyun Ra , Hyuk-Soo Lee , Jeong-Bok Kwak , Jung-Woo Lee , Choon-Keun Lee , Sang-Moon Lee
IPC分类号： H05K3/46
CPC分类号： H05K1/09 , H05K3/0014 , H05K3/107 , H05K2201/0329 , H05K2203/0108 , H05K2203/0796
摘要： The present invention relates to a method for manufacturing a printed circuit board, more particularly to a method for manufacturing a printed circuit board, in which an oxidant capable of polymerizing conductive polymers is selectively marked on a board using imprinting, and the monomer of a conductive polymer is filled in the selected pattern and polymerized, to provide a conductive polymer wiring pattern. With the method for manufacturing a printed circuit board according to certain aspects of the invention as set forth above, a printed circuit board can be given finer wiring widths to allow a highly integrated, highly efficient printed circuit board. Thus, a printed circuit board (PCB) or a flexible printed circuit boards (FPCB) can be manufactured that is applicable to industrial, clerical, and domestic electric electronic products, by a new technique of forming conductive polymer wiring using imprinting.
摘要翻译：本发明涉及一种印刷电路板的制造方法，更具体地说，涉及一种印刷电路板的制造方法，其中使用压印法在基板上选择性地标记导电聚合物聚合的氧化剂，并且导电的单体聚合物以选定的图案填充并聚合，以提供导电聚合物布线图案。根据如上所述的根据本发明的某些方面的印刷电路板的制造方法，印刷电路板可以被给予更细的布线宽度，以允许高度集成的高效印刷电路板。因此，可以通过使用压印形成导电聚合物布线的新技术，制造适用于工业，文书和家用电子电子产品的印刷电路板（PCB）或柔性印刷电路板（FPCB）。

9. 发明授权

US06926544B2 Flash memory apparatus having single body type rotary cover 有权
标题翻译：具有单体型旋转盖的闪存装置
公开(公告)号：US06926544B2
公开(公告)日：2005-08-09
申请号：US10346105
申请日：2003-01-17
申请人： Jung-Woo Lee
发明人： Jung-Woo Lee
IPC分类号： B65D43/16 , B65D55/16 , G06F3/06 , G06F12/00 , G06F13/40 , G06K19/00 , G06K19/077 , G11C29/00 , H01R13/44 , H01R13/447 , H01R13/52 , H05K5/02 , H05K7/16
CPC分类号： H01R13/447 , H01R13/5213 , H05K5/0278
摘要： A flash memory apparatus having a single body type rotary cover, wherein a cover is not completely separated from a main body so that loss of the cover is prevented. The flash memory apparatus includes: a flash memory main body including a rectangular shaped case within which a memory element is mounted. A USB terminal piece is electrically connected with the memory element and is installed at a front end of the case to project therefrom and a hinge protuberance formed on at least one side of the case. A cover defined by a pair of parallel plate members facing each other with an interval corresponding to the thickness of the case is provided. The cover has an open front end and a closed rear end. Both lateral ends of the cover are open. The parallel plate members have a pair of hinge holes joined to the hinge protuberance, so that the cover is rotatable with respect to the flash memory main body, whereby the USB terminal piece is either received in an inner space of the cover or rotated for exposure to the outside of the cover.
摘要翻译：一种具有单体型旋转盖的闪存装置，其中盖子与主体不完全分离，从而防止了盖子的损失。闪速存储装置包括：闪存主体，包括其中安装有存储元件的矩形壳体。 USB端子片与存储元件电连接并且安装在壳体的前端以从其突出并且形成在壳体的至少一侧上的铰链突起。提供由一对平行板构件限定的盖子，该平板板构件面对彼此具有对应于壳体厚度的间隔。盖子有一个敞开的前端和一个封闭的后端。盖子的两个侧端均打开。平行板构件具有连接到铰链突起的一对铰链孔，使得盖可相对于闪存主体旋转，由此USB端子件被接收在盖的内部空间中或旋转以进行曝光到外面的封面。

10. 发明授权

US06872510B2 Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same 有权
标题翻译：具有用于制造半导体存储器件中的开口的开口的小间距图像的光掩模和用于制造该光掩模的光刻方法
公开(公告)号：US06872510B2
公开(公告)日：2005-03-29
申请号：US10391909
申请日：2003-03-19
申请人： Jung-Woo Lee , Hak Kim
发明人： Jung-Woo Lee , Hak Kim
IPC分类号： H01L21/027 , G03F1/00 , G03F7/40 , G03C5/00
CPC分类号： G03F7/40 , G03F1/50
摘要： A photomask having small pitch images of openings for fabricating an opening of a semiconductor memory device includes a plurality of images of openings arranged in a row direction with a predetermined pitch to be used to transfer the images of openings onto a photoresist layer, and is used for a photolithographic process employing a photoresist flow process. The distance between the centers of the images of openings arranged in the photomask is larger than the pitch. A photolithographic method for fabricating reduced size openings and a semiconductor memory device having openings fabricated using the same method is also provided.
摘要翻译：具有用于制造半导体存储器件的开口的开口的小间距图像的光掩模包括以预定间距排列成行方向的多个开口图像，以用于将开口图像转印到光致抗蚀剂层上，并且被使用用于使用光致抗蚀剂流动方法的光刻工艺。布置在光掩模中的开口的图像的中心之间的距离大于间距。还提供了一种用于制造尺寸较小的开口的光刻方法和具有使用相同方法制造的开口的半导体存储器件。

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