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1. 发明授权

US08045376B2 Flash memory device with multi level cell and burst access method therein 失效
标题翻译：具有多级单元和突发存取方法的闪存器件
公开(公告)号：US08045376B2
公开(公告)日：2011-10-25
申请号：US12615374
申请日：2009-11-10
申请人： Jung-Woo Lee , Jae-Yong Jeong
发明人： Jung-Woo Lee , Jae-Yong Jeong
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G11C11/5628 , G11C2211/5633
摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
摘要翻译：一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字，重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

2. 发明授权

US07359240B2 Flash memory device with multi level cell and burst access method therein 失效
标题翻译：具有多级单元和突发存取方法的闪存器件
公开(公告)号：US07359240B2
公开(公告)日：2008-04-15
申请号：US11322983
申请日：2005-12-29
申请人： Jung-Woo Lee , Jae-Yong Jeong
发明人： Jung-Woo Lee , Jae-Yong Jeong
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G11C11/5628 , G11C2211/5633
摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
摘要翻译：一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字，重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

3. 发明申请

US20070016722A1 Flash memory device with multi level cell and burst access method therein 失效
标题翻译：具有多级单元和突发存取方法的闪存器件
公开(公告)号：US20070016722A1
公开(公告)日：2007-01-18
申请号：US11322983
申请日：2005-12-29
申请人： Jung-Woo Lee , Jae-Yong Jeong
发明人： Jung-Woo Lee , Jae-Yong Jeong
IPC分类号： G06F12/00 , G06F13/28 , G06F13/00
CPC分类号： G11C11/5642 , G11C11/5628 , G11C2211/5633
摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
摘要翻译：一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字，重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

4. 发明授权

US07623376B2 Flash memory device with multi level cell and burst access method therein 失效
标题翻译：具有多级单元和突发存取方法的闪存器件
公开(公告)号：US07623376B2
公开(公告)日：2009-11-24
申请号：US12035346
申请日：2008-02-21
申请人： Jung-Woo Lee , Jae-Yong Jeong
发明人： Jung-Woo Lee , Jae-Yong Jeong
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G11C11/5628 , G11C2211/5633
摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
摘要翻译：一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字，重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

5. 发明授权

US07787305B2 Flash memory devices and programming methods that vary programming conditions in response to a selected step increment 有权
标题翻译：闪存器件和编程方法可以响应于选定的步进增量而改变编程条件
公开(公告)号：US07787305B2
公开(公告)日：2010-08-31
申请号：US12134648
申请日：2008-06-06
申请人： In-Mo Kim , Jae-Yong Jeong , Chi-Weon Yoon
发明人： In-Mo Kim , Jae-Yong Jeong , Chi-Weon Yoon
IPC分类号： G11C16/04
CPC分类号： G11C16/10
摘要： A flash memory device includes a flash memory cell array having flash memory cells arranged with word and bit lines, a word line driver circuit configured to drive the word lines at a selected step increment during a programming operation, a bulk-voltage supply circuit configured to supply a bulk voltage into a bulk of the flash memory cell array and a writing circuit configured to drive the bit lines selected by conditions during a programming operation. A control logic block is configured to control the writing circuit and the bulk-voltage supply circuit during the programming operation. The control logic block is configured to cause the writing circuit and/or the bulk-voltage supply circuit to change at least one of the conditions of the writing circuit and/or the bulk voltage responsive to the selected step increment.
摘要翻译：一种闪速存储器件包括：闪存单元阵列，具有布置有字线和位线的闪速存储器单元;字线驱动器电路，被配置为在编程操作期间以选定的阶跃增量驱动所述字线，所述体电压电源电路被配置为将大容量电压提供到闪存单元阵列的大部分中;以及写入电路，其被配置为驱动在编程操作期间由条件选择的位线。控制逻辑块被配置为在编程操作期间控制写入电路和体电压电源电路。控制逻辑块被配置为使得写入电路和/或体电压电源电路响应于所选择的步进增量来改变写入电路和/或体电压的条件中的至少一个。

6. 发明授权

US07474566B2 Non-volatile memory device and method capable of re-verifying a verified memory cell 有权
标题翻译：能够重新验证经过验证的存储单元的非易失性存储器件和方法
公开(公告)号：US07474566B2
公开(公告)日：2009-01-06
申请号：US11763606
申请日：2007-06-15
申请人： Kee-Ho Jung , Jae-Yong Jeong , Chi-Weon Yoon
发明人： Kee-Ho Jung , Jae-Yong Jeong , Chi-Weon Yoon
IPC分类号： G11C16/06
CPC分类号： G11C16/3454
摘要： A method of driving a non-volatile memory device includes programming a plurality of memory cells based on a first data copied from a program data buffer to a verification data buffer, verifying the memory cells by overwriting a result of the verification of the programmed memory cells to a verification data buffer, and re-verifying the memory cells by repeating the programming and verifying operations at least once with respect to the memory cells that were successfully verified, based on the verification result written to the verification data buffer. A non-volatile memory device includes a program data buffer storing first data, a verification data buffer copying and storing the first data, a plurality of memory cells programmed based on the data stored in the verification data buffer, a comparator comparing data stored in the verification data buffer with data read out from the programmed memory cells and outputting comparison data generated based on a result of the comparison to the verification data buffer, and a control unit controlling the program data buffer, the verification data buffer, the memory cells, and the comparator to additionally program or verify the memory cells that were successfully verified, based on the first data.
摘要翻译：驱动非易失性存储器件的方法包括：基于从程序数据缓冲器复制到验证数据缓冲器的第一数据来编程多个存储器单元，通过覆盖编程的存储器单元的验证结果来验证存储器单元并且基于写入验证数据缓冲器的验证结果，通过重复对相对于成功验证的存储器单元的编程和验证操作至少一次来重新验证存储器单元。非易失性存储装置包括存储第一数据的程序数据缓冲器，复制和存储第一数据的验证数据缓冲器，基于存储在验证数据缓冲器中的数据编程的多个存储器单元，比较存储在验证数据缓冲器中的数据的比较器验证数据缓冲器，其具有从编程的存储器单元读出的数据，并输出基于与验证数据缓冲器的比较结果生成的比较数据;以及控制单元，控制程序数据缓冲器，验证数据缓冲器，存储器单元和所述比较器基于所述第一数据额外编程或验证已成功验证的存储器单元。

7. 发明申请

US20080137435A1 Flash memory devices that support incremental step-pulse programming using nonuniform verify time intervals 有权
标题翻译：使用非均匀验证时间间隔支持增量式步进脉冲编程的闪存设备
公开(公告)号：US20080137435A1
公开(公告)日：2008-06-12
申请号：US12031422
申请日：2008-02-14
申请人： Soo-Han Kim , Jae-Yong Jeong
发明人： Soo-Han Kim , Jae-Yong Jeong
IPC分类号： G11C16/06
CPC分类号： G11C16/12 , G11C16/3454 , G11C16/3459
摘要： Nonvolatile memory devices support programming and verify operations that improve threshold-voltage distribution within programmed memory cells. This improvement is achieved by reducing a magnitude of the programming voltage steps and increasing a duration of the verify operations once at least one of the plurality of memory cells undergoing programming has been verified as a “passed” memory cell. The nonvolatile memory device includes an array of nonvolatile memory cells and a control circuit, which is electrically coupled to the array of nonvolatile memory cells. The control circuit is configured to perform a plurality of memory programming operations (P) by driving a selected word line in the array with a first stair step sequence of program voltages having first step height (e.g., ΔV1) and then, in response to verifying that at least one of the memory cells coupled to the selected word line is a passed memory cell, driving the selected word line with a second stair step sequence of program voltages having a second step height (e.g., ΔV2) lower than the first step height.
摘要翻译：非易失性存储器件支持编程和验证操作，以改善程序存储单元内的阈值电压分布。一旦将经历编程的多个存储器单元中的至少一个已经被验证为“传递”的存储器单元，则通过减小编程电压步长的大小并增加验证操作的持续时间来实现这种改进。非易失性存储器件包括非易失性存储器单元的阵列和电耦合到非易失性存储单元阵列的控制电路。控制电路被配置为通过以具有第一台阶高度（例如，DeltaV 1）的编程电压的第一阶梯顺序驱动阵列中的选定字线来执行多个存储器编程操作（P），然后响应于验证耦合到所选择的字线的存储器单元中的至少一个是经过的存储单元，用具有低于第一个字线的第二阶梯高度（例如，DeltaV 2）的编程电压的第二阶梯顺序驱动所选择的字线步高。

8. 发明授权

US07298654B2 Non-volatile memory device and associated method of erasure 失效
标题翻译：非易失性存储器件及相关的擦除方法
公开(公告)号：US07298654B2
公开(公告)日：2007-11-20
申请号：US11133234
申请日：2005-05-20
申请人： Jae-Yong Jeong , Young-Ho Lim
发明人： Jae-Yong Jeong , Young-Ho Lim
IPC分类号： G11C11/34
CPC分类号： G11C16/3409 , G11C16/16 , G11C16/3404 , G11C16/344 , G11C16/3445
摘要： Disclosed is a non-volatile memory device and a method of erasing the non-volatile memory device. An erase voltage is simultaneously applied to a plurality of sectors contained in the non-volatile memory device. Then, erase validation is sequentially performed for each of the plurality sectors and results of the erase validation are stored in a plurality of pass information registers. According to the results stored in the pass information registers, sectors which were not successfully erased are simultaneously re-erased and then sequentially re-validated until no such “failed sectors” remain in the non-volatile memory device. Upon eliminating the “failed sectors” from the non-volatile memory device, a post-program operation is sequentially performed on each of the plurality of sectors.
摘要翻译：公开了一种非易失性存储器件和擦除非易失性存储器件的方法。同时将擦除电压施加到包含在非易失性存储器件中的多个扇区。然后，针对多个扇区中的每一个依次执行擦除验证，并将擦除确认的结果存储在多个通过信息寄存器中。根据存储在通过信息寄存器中的结果，同时重新擦除未成功擦除的扇区，然后顺序重新验证，直到在非易失性存储器件中不存在这样的“故障扇区”为止。在从非易失性存储器件消除“故障扇区”时，对多个扇区中的每一个依次执行后编程操作。

9. 发明授权

US07286413B2 Non-volatile memory device and method of programming same 失效
标题翻译：非易失性存储器件和编程方法相同
公开(公告)号：US07286413B2
公开(公告)日：2007-10-23
申请号：US11257074
申请日：2005-10-25
申请人： Jae-Yong Jeong , Heung-Soo Lim
发明人： Jae-Yong Jeong , Heung-Soo Lim
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/10 , G11C16/24
摘要： Disclosed are a non-volatile memory device and a method of programming the same. The method comprises applying a wordline voltage, a bitline voltage, and a bulk voltage to a memory cell during a plurality of program loops. In cases where the bitline voltage falls below a first predetermined detection voltage during a current program loop, or the bulk voltage becomes higher than a second predetermined detection voltage, the same wordline voltage is used in the current programming loop and a next program loop following the current program loop. Otherwise, the wordline voltage is incremented by a predetermined amount before the next programming loop.
摘要翻译：公开了一种非易失性存储器件及其编程方法。该方法包括在多个程序循环期间将字线电压，位线电压和体电压施加到存储器单元。在当前程序循环期间位线电压下降到低于第一预定检测电压或体电压变得高于第二预定检测电压的情况下，在当前编程环路中使用相同的字线电压，并在下一个程序循环当前程序循环。否则，在下一个编程循环之前，字线电压增加预定量。

10. 发明申请

US20070183216A1 Reprogrammable nonvolatile memory devices and methods 失效
标题翻译：可重复编程的非易失性存储器件和方法
公开(公告)号：US20070183216A1
公开(公告)日：2007-08-09
申请号：US11634058
申请日：2006-12-05
申请人： Jin-Young Chun , Jae-Yong Jeong
发明人： Jin-Young Chun , Jae-Yong Jeong
IPC分类号： G11C16/04 , G11C11/34 , G11C16/06
CPC分类号： G11C16/12 , G11C16/26 , G11C16/3459
摘要： A nonvolatile memory device includes a command decoder configured to generate a read/write flag signal in response to a read/write command and to generate a reprogram flag signal in response to a reprogram command, and a read/write circuit configured to control reading and writing operations in a memory cell array. The device further includes a read/write controller configured to cause the read/write circuit to perform a reading/writing operation in response to the read/write flag signal provided from the command decoder, and a reprogram controller configured to cause the read/write controller to perform a reprogramming operation in response to the reprogram flag signal. Methods of reprogramming a memory device include determining whether the memory device is in a busy state, delaying a reprogramming operation if the memory device is in a busy state, and executing the reprogramming operation when the memory device has turned to a standby state from the busy state.
摘要翻译：非易失性存储器件包括：命令解码器，被配置为响应于读/写命令产生读/写标志信号，并且响应于重编程命令产生再编程标志信号;以及读/写电路，被配置为控制读/ 在存储单元阵列中进行写操作。该装置还包括读/写控制器，其被配置为使得读/写电路响应于从命令解码器提供的读/写标志信号执行读/写操作;以及重新编程控制器，其被配置为使读/ 控制器响应于重新编程标志信号执行重新编程操作。重新编程存储器件的方法包括：确定存储器件是否处于忙状态，如果存储器件处于忙状态，则延迟重新编程操作，并且当存储器件已经从忙时转为待机状态时执行重新编程操作州。

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