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1. 发明申请

US20130301346A1 SELF REFERENCING SENSE AMPLIFIER FOR SPIN TORQUE MRAM 有权
标题翻译：自适应感应放大器用于旋转扭矩MRAM
公开(公告)号：US20130301346A1
公开(公告)日：2013-11-14
申请号：US13872993
申请日：2013-04-29
申请人： Chitra K. Subramanian , Syed M. Alam
发明人： Chitra K. Subramanian , Syed M. Alam
IPC分类号： G11C11/16
CPC分类号： G11C11/1673
摘要： Circuitry and a method provide self-referenced sensing of a resistive memory cell by using its characteristic of resistance variation with applied voltage in one state versus a relatively constant resistance regardless of the applied voltage in its opposite state. Based on an initial bias state with equalized resistances, a current comparison at a second bias state between a mock bit line and a bit line is used to determine the state of the memory cell, since a significant difference in current implies that the memory cell state has a significant voltage coefficient of resistance. An offset current applied to the mock bit line optionally may be used to provide symmetry and greater sensing margin.
摘要翻译：电路和方法通过使用其在一个状态下的施加电压与相对恒定电阻的电阻变化的特性来提供电阻式存储器单元的自参考感测，而不管其相反状态下的施加电压如何。基于具有均衡电阻的初始偏置状态，使用模拟位线和位线之间的第二偏置状态下的电流比较来确定存储器单元的状态，因为电流的显着差异意味着存储单元状态具有显着的电阻系数。施加到模拟位线的偏移电流可选地可以用于提供对称性和更大的感测余量。

2. 发明授权

US09135965B2 Memory controller and method for interleaving DRAM and MRAM accesses 有权
标题翻译：用于交错DRAM和MRAM访问的存储器控制器和方法
公开(公告)号：US09135965B2
公开(公告)日：2015-09-15
申请号：US13328867
申请日：2011-12-16
申请人： Syed M. Alam , Thomas Andre , Dietmar Gogl
发明人： Syed M. Alam , Thomas Andre , Dietmar Gogl
IPC分类号： G11C11/00 , G11C7/10 , G11C11/4076 , G11C8/04
CPC分类号： G06F3/0659 , G06F3/0611 , G06F3/0685 , G06F12/0246 , G06F12/0638 , G06F13/1694 , G06F2212/205 , G06F2212/7201 , G11C7/1042 , G11C7/1072 , G11C8/04 , G11C11/005 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/4076 , G11C11/4091 , G11C11/4094 , G11C11/4096 , G11C14/0036
摘要： A memory controller and method for interleaving volatile and non-volatile memory different latencies and page sizes are described wherein a single DDR3 memory controller communicates with a number of memory modules comprising of at least non-volatile memory, e.g., spin torque magnetic random access memory, integrated in a different Rank or Channel with a volatile memory, e.g., dynamic random access memory (DRAM).
摘要翻译：描述了用于交错易失性和非易失性存储器的不同延迟和页面大小的存储器控制器和方法，其中单个DDR3存储器控制器与包括至少非易失性存储器的多个存储器模块进行通信，例如，自旋转矩磁性随机存取存储器集成在具有易失性存储器的不同等级或信道中，例如动态随机存取存储器（DRAM）。

3. 发明授权

US07723207B2 Three dimensional integrated circuit and method of design 失效
标题翻译：三维集成电路及设计方法
公开(公告)号：US07723207B2
公开(公告)日：2010-05-25
申请号：US11737598
申请日：2007-04-19
申请人： Syed M. Alam , Ibrahim M. Elfadel , Kathryn W Guarini , Meikei Ieong , Prabhakar N. Kudva , David S. Kung , Mark A. Lavin , Arifur Rahman
发明人： Syed M. Alam , Ibrahim M. Elfadel , Kathryn W Guarini , Meikei Ieong , Prabhakar N. Kudva , David S. Kung , Mark A. Lavin , Arifur Rahman
IPC分类号： H01L21/30
CPC分类号： H01L27/0688 , H01L21/2007 , H01L21/84 , H01L27/1203
摘要： A three dimensional (3D) integrated circuit (IC), 3D IC chip and method of fabricating a 3D IC chip. The chip includes multiple layers of circuits, e.g., silicon insulator (SOI) CMOS IC layers, each including circuit elements. The layers may be formed in parallel and one layer attached to another to form a laminated 3D chip.
摘要翻译：三维（3D）集成电路（IC），3D IC芯片和3D IC芯片的制造方法。该芯片包括多层电路，例如硅绝缘体（SOI）CMOS IC层，每层包括电路元件。这些层可以平行地形成，并且一层附着到另一层以形成层叠的3D芯片。

4. 发明申请

US20090086524A1 PROGRAMMABLE ROM USING TWO BONDED STRATA AND METHOD OF OPERATION 有权
标题翻译：可编程ROM使用两个绑定的条纹和操作方法
公开(公告)号：US20090086524A1
公开(公告)日：2009-04-02
申请号：US11865991
申请日：2007-10-02
申请人： Syed M. Alam , Robert E. Jones
发明人： Syed M. Alam , Robert E. Jones
IPC分类号： G11C17/00 , H01S4/00
CPC分类号： G11C17/14 , H01L25/18 , H01L27/112 , H01L27/11226 , H01L2225/06513 , H01L2225/06527 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.
摘要翻译：实现为3D集成设备的只读存储器具有用于将第一层耦合到第二层的第一层，第二层和粘结层间连接。两层之间的物理绑定实现了只读存储器的编程。层可以是晶片形式或模具形式。第一层包括功能性有源器件和至少一个非编程有源器件。第二层包括至少与至少一个非编程的有源设备相关联的导电路由。所述接合的层间连接包括用于对所述至少一个非编程的有源器件进行编程以及为所述编程的有源器件提供导电路由的至少一个结合的可编程层间连接。因此，这两个层由此形成一个编程的ROM。其他类型的可编程存储设备可以通过键合两个层来实现。

5. 发明申请

US20080113505A1 METHOD OF FORMING A THROUGH-SUBSTRATE VIA 审中-公开
标题翻译：形成通过基底的方法
公开(公告)号：US20080113505A1
公开(公告)日：2008-05-15
申请号：US11558988
申请日：2006-11-13
申请人： Terry G. Sparks , Syed M. Alam , Ritwik Chatterjee , Shahid Rauf
发明人： Terry G. Sparks , Syed M. Alam , Ritwik Chatterjee , Shahid Rauf
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method for achieving a through-substrate via through a substrate having active circuitry on a first major surface begins by forming a hole into the substrate through the first major surface. The hole is lined with a conductive layer. A dielectric layer is deposited over the conductive layer. This deposition is performed in a manner that causes the dielectric layer to be substantially conformal. Conductive material is formed over first dielectric layer. A second major surface of the substrate is etched to expose the conductive material.
摘要翻译：通过在第一主表面上具有有源电路的基板实现贯通基板通孔的方法首先通过第一主表面在基板中形成孔。孔内衬有导电层。介电层沉积在导电层上。这种沉积以使介电层基本上保形的方式进行。导电材料形成在第一介电层上。蚀刻衬底的第二主表面以暴露导电材料。

6. 发明授权

US09112536B2 Method of reading and writing to a spin torque magnetic random access memory with error correcting code 有权
标题翻译：读取和写入具有纠错码的自旋转矩磁随机存取存储器的方法
公开(公告)号：US09112536B2
公开(公告)日：2015-08-18
申请号：US13362805
申请日：2012-01-31
申请人： Syed M. Alam , Thomas Andre , Matthew R. Croft
发明人： Syed M. Alam , Thomas Andre , Matthew R. Croft
IPC分类号： H03M13/05 , G06F11/10 , H03M13/29
CPC分类号： G06F11/1076 , G06F11/1012 , G06F11/1048 , G11C11/1673 , G11C11/1675 , H03M13/2906
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.
摘要翻译：一种方法包括使用用于纠错的纠错码（ECC）和将反相或非反相数据存储在数据存储锁存器中来自动读取自旋扭矩磁随机存取存储器的位。当随后的写入操作改变数据存储锁存器的状态时，启动奇偶校验计算和多数位的检测。写入数据的多数位检测和潜在反转使写入电流脉冲的数量最小化。在指定时间内或原始写入操作开始之前接收到的后续写入操作将导致多数检测操作中止。

7. 发明授权

US09047969B2 Method of writing to a spin torque magnetic random access memory 有权
标题翻译：写入自旋转矩磁随机存取存储器的方法
公开(公告)号：US09047969B2
公开(公告)日：2015-06-02
申请号：US14452071
申请日：2014-08-05
申请人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
发明人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
IPC分类号： G11C11/00 , G11C11/16 , G06F11/10 , G11C29/04
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译：一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。

8. 发明授权

US08811071B2 Method of writing to a spin torque magnetic random access memory 有权
标题翻译：写入自旋转矩磁随机存取存储器的方法
公开(公告)号：US08811071B2
公开(公告)日：2014-08-19
申请号：US13362599
申请日：2012-01-31
申请人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
发明人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译：一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。

9. 发明申请

US20120195112A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：写入旋转磁力随机存取存储器的方法
公开(公告)号：US20120195112A1
公开(公告)日：2012-08-02
申请号：US13362599
申请日：2012-01-31
申请人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
发明人： Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G06F11/1048 , G06F11/1076 , G11C11/00 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C2013/0076 , G11C2029/0411
摘要： A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
摘要翻译：一种方法包括破坏性地读取自旋扭矩磁随机存取存储器的位并立即写回原始值或反相值。采用回写位的多数状态的检测和回写位的条件反转来减少回写脉冲的数量。在指定时间内或在原始写入操作开始之前接收到的后续写入命令将导致回写脉冲的一部分或原始写入操作脉冲中止。在后续写入操作期间的写入脉冲将遵循在破坏性读取期间为回写位确定的条件反演。

10. 发明授权

US07715227B2 Programmable ROM using two bonded strata 有权
标题翻译：可编程ROM使用两个粘结层
公开(公告)号：US07715227B2
公开(公告)日：2010-05-11
申请号：US11865991
申请日：2007-10-02
申请人： Syed M. Alam , Robert E. Jones
发明人： Syed M. Alam , Robert E. Jones
IPC分类号： G11C11/50
CPC分类号： G11C17/14 , H01L25/18 , H01L27/112 , H01L27/11226 , H01L2225/06513 , H01L2225/06527 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.
摘要翻译：实现为3D集成设备的只读存储器具有用于将第一层耦合到第二层的第一层，第二层和粘结层间连接。两层之间的物理绑定实现了只读存储器的编程。层可以是晶片形式或模具形式。第一层包括功能性有源器件和至少一个非编程有源器件。第二层包括至少与至少一个非编程的有源设备相关联的导电路由。所述接合的层间连接包括用于对所述至少一个非编程的有源器件进行编程以及为所述编程的有源器件提供导电路由的至少一个结合的可编程层间连接。因此，这两个层由此形成一个编程的ROM。其他类型的可编程存储设备可以通过键合两个层来实现。

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