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1. 发明申请

US20070122948A1 Thin-film transistor and diode array for an imager panel or the like 有权
标题翻译：用于成像器面板的薄膜晶体管和二极管阵列等
公开(公告)号：US20070122948A1
公开(公告)日：2007-05-31
申请号：US11291602
申请日：2005-11-30
申请人： Ching-Yeu Wei , Douglas Albagli , William Hennessy
发明人： Ching-Yeu Wei , Douglas Albagli , William Hennessy
IPC分类号： H01L33/00 , H01L21/84
CPC分类号： H01L27/1214 , H01L27/14663 , H01L31/115
摘要： Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
摘要翻译：简而言之，根据一个或多个实施例，可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。薄膜晶体管阵列可以具有形成的一个或多个通孔，用于增加光电二极管阵列与薄膜晶体管阵列的粘附。通孔可以包括具有阶梯结构的侧壁。薄膜晶体管阵列可以包括第一金属化层和第二金属化层。第三金属化层可以添加到薄膜晶体管阵列中，其中光电二极管阵列的二极管可以接触第三金属化层。光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。

2. 发明授权

US07759680B2 Thin-film transistor and diode array for an imager panel or the like 有权
标题翻译：用于成像器面板的薄膜晶体管和二极管阵列等
公开(公告)号：US07759680B2
公开(公告)日：2010-07-20
申请号：US11291602
申请日：2005-11-30
申请人： Ching-Yeu Wei , Douglas Albagli , William Hennessy
发明人： Ching-Yeu Wei , Douglas Albagli , William Hennessy
IPC分类号： H01L31/00
CPC分类号： H01L27/1214 , H01L27/14663 , H01L31/115
摘要： Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
摘要翻译：简而言之，根据一个或多个实施例，可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。薄膜晶体管阵列可以具有形成的一个或多个通孔，用于增加光电二极管阵列与薄膜晶体管阵列的粘附。通孔可以包括具有阶梯结构的侧壁。薄膜晶体管阵列可以包括第一金属化层和第二金属化层。第三金属化层可以添加到薄膜晶体管阵列中，其中光电二极管阵列的二极管可以接触第三金属化层。光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。

3. 发明申请

US20050078231A1 Storage capacitor design for a solid state imager 有权
标题翻译：存储电容设计为固态成像仪
公开(公告)号：US20050078231A1
公开(公告)日：2005-04-14
申请号：US10687407
申请日：2003-10-14
申请人： Ji-Ung Lee , Douglas Albagli , George Possin , William Hennessy , Ching-Yeu Wei
发明人： Ji-Ung Lee , Douglas Albagli , George Possin , William Hennessy , Ching-Yeu Wei
IPC分类号： G01T1/20 , G02F1/136 , H01L21/02 , H01L27/14 , H01L27/146 , H01L31/09
CPC分类号： H01L27/14658
摘要： Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.
摘要翻译：存储电容设计为固态成像仪。成像器包括以成像阵列图案设置在基板上的若干像素。每个像素包括耦合到薄膜开关晶体管的光电传感器。若干扫描线沿着第一轴相对于衬底设置在第一水平面上，并且几个数据线沿着成像阵列的第二轴线设置在第二水平处。沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。每个像素包括与光电传感器并联耦合的存储电容器，存储电容器包括存储电容器电极和电容器公共电极。

4. 发明授权

US06396046B1 Imager with reduced FET photoresponse and high integrity contact via 有权
标题翻译：具有降低的FET光响应和高完整性接触通孔的成像器
公开(公告)号：US06396046B1
公开(公告)日：2002-05-28
申请号：US09643228
申请日：2000-08-22
申请人： George Edward Possin , Robert Forrest Kwasnick , Ching-Yeu Wei , Douglas Albagli
发明人： George Edward Possin , Robert Forrest Kwasnick , Ching-Yeu Wei , Douglas Albagli
IPC分类号： H01L2700
CPC分类号： H01L27/14663 , H01L27/14609 , H01L27/14623
摘要： A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.
摘要翻译：公开了一种设置在辐射成像器的开关装置（例如TFT）的感光区域上的光阻材料。光阻止材料防止从闪烁体发出的光子光子进入开关装置并被吸收。因此，成像器中的串扰和噪声被降低。此外，避免了非线性像素响应和传递到读出电子装置的寄生信号。可选地，包含相同的光块材料的不透明盖可以包括在成像器结构中。帽盖覆盖填充有公共电极并位于成像器的接触指状区域中的接触通孔。从而在随后的处理期间保持填充的通孔的完整性。还公开了包含这些结构的辐射成像仪。

5. 发明授权

US06740884B2 Imaging array and methods for fabricating same 有权
标题翻译：成像阵列及其制造方法
公开(公告)号：US06740884B2
公开(公告)日：2004-05-25
申请号：US10116469
申请日：2002-04-03
申请人： Ji Ung Lee , Douglas Albagli , George Edward Possin , Ching-Yeu Wei
发明人： Ji Ung Lee , Douglas Albagli , George Edward Possin , Ching-Yeu Wei
IPC分类号： H01L2100
CPC分类号： H01L27/14658
摘要： A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.
摘要翻译：一种辐射检测器，包括：一个包括源电极，漏电极，栅电极，第一电介质层和第二电介质层的顶栅极薄膜晶体管，其中第二电介质层在第一电介质层的表面上延伸电介质层。辐射检测器还包括包括至少两个电极和电介质层的电容器。电容器电介质层与TFT第二电介质层一体地形成。

6. 发明授权

US06167110A High voltage x-ray and conventional radiography imaging apparatus and method 失效
标题翻译：高压x射线和常规放射成像设备及方法
公开(公告)号：US06167110A
公开(公告)日：2000-12-26
申请号：US963519
申请日：1997-11-03
申请人： Gerorge Edward Possin , Andrew Joseph Galish , Ralph Gerald Isaacs , Douglas Albagli , Ching-Yeu Wei , Thomas William Birdwell , Francis Howard Little , Sung Su Han
发明人： Gerorge Edward Possin , Andrew Joseph Galish , Ralph Gerald Isaacs , Douglas Albagli , Ching-Yeu Wei , Thomas William Birdwell , Francis Howard Little , Sung Su Han
IPC分类号： G01T5/08 , H05G1/60
CPC分类号： G01T1/201
摘要： A detector (20) for high voltage x-rays includes a plurality of sensor elements (22) with each sensor element being aligned along a respective focal axis (25) with respect to a high voltage x-ray source (24). A fiber optic scintillator (34) is optically coupled to each of said sensor elements and is disposed to receive incident x-ray radiation passing from the object to be imaged. Optical fibers of the scintillator are positioned such that their optical axes are perpendicular to incident x-rays. Each sensor element has a length along the focal axis sufficiently long for the fibers to absorb substantially all incident x-rays. Each sensor element comprises an array of amorphous silicon photosensors disposed to detect light generated by the scintillator.
摘要翻译：用于高电压X射线的检测器（20）包括多个传感器元件（22），其中每个传感器元件相对于高压x射线源（24）沿相应的焦点轴线对齐。光纤闪烁体（34）被光学耦合到每个所述传感器元件并被设置成接收从待成像的物体通过的入射的x射线辐射。闪烁体的光纤被定位成使得它们的光轴垂直于入射的X射线。每个传感器元件具有沿着焦点轴线的足够长的长度以使纤维基本上吸收所有入射的X射线。每个传感器元件包括设置成检测由闪烁体产生的光的非晶硅光电传感器的阵列。

7. 发明授权

US07145152B2 Storage capacitor design for a solid state imager 有权
标题翻译：存储电容设计为固态成像仪
公开(公告)号：US07145152B2
公开(公告)日：2006-12-05
申请号：US10687407
申请日：2003-10-14
申请人： Ji-Ung Lee , Douglas Albagli , George Edward Possin , William Andrew Hennessy , Ching-Yeu Wei
发明人： Ji-Ung Lee , Douglas Albagli , George Edward Possin , William Andrew Hennessy , Ching-Yeu Wei
IPC分类号： G02F1/136 , H01L31/115 , G06T11/00
CPC分类号： H01L27/14658
摘要： Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.
摘要翻译：存储电容设计为固态成像仪。成像器包括以成像阵列图案设置在基板上的若干像素。每个像素包括耦合到薄膜开关晶体管的光电传感器。若干扫描线沿着第一轴相对于基板设置在第一水平面上，并且沿着成像阵列的第二轴将多条数据线布置在第二级。沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。每个像素包括与光电传感器并联耦合的存储电容器，存储电容器包括存储电容器电极和电容器公共电极。

8. 发明授权

US06784434B2 Imaging array and method for manufacturing same 有权
标题翻译：成像阵列及其制造方法
公开(公告)号：US06784434B2
公开(公告)日：2004-08-31
申请号：US10183904
申请日：2002-06-25
申请人： William Andrew Hennessy , Douglas Albagli , Ji Ung Lee , Ching-Yeu Wei
发明人： William Andrew Hennessy , Douglas Albagli , Ji Ung Lee , Ching-Yeu Wei
IPC分类号： G01T124
CPC分类号： H01L27/14658 , H01L27/14692
摘要： A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.
摘要翻译：一种用于制造包括至少一个薄膜晶体管（TFT）的辐射检测器的方法包括在TFT上形成与光阻挡元件一体的低电阻数据线条带。

9. 发明申请

US20050072931A1 Solid-state radiation imager with back-side irradiation 有权
标题翻译：固体辐射成像仪具有背面照射
公开(公告)号：US20050072931A1
公开(公告)日：2005-04-07
申请号：US10681767
申请日：2003-10-06
申请人： Douglas Albagli , Joseph Shiang , George Possin , William Hennessy
发明人： Douglas Albagli , Joseph Shiang , George Possin , William Hennessy
IPC分类号： G01T1/20 , G01T1/24 , H01L27/14 , H01L27/146 , H01L31/09 , H01L31/115 , H04N5/32
CPC分类号： G01T1/2018
摘要： A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.
摘要翻译：具有背面照射的固态成像仪。本发明提供了一种固态成像器，其包括适于接收入射辐射的基本上辐射透明的衬底。辐射通过基片和像素化的感光元件阵列到闪烁体材料，其吸收辐射。感光元件的像素化阵列接收光子，并测量与闪烁体材料的辐射相互作用产生的光量。有了这个成像器，传播和模糊就越少，从而形象越好。在另一个实施例中，存在设置在像素化的感光元件阵列和闪烁体材料之间的基本上透明的材料。基本上透明的材料吸收并基本上阻挡电子进入感光元件的像素化阵列的有源区域。这使得成像器能够根据其规格执行更长的时间。

10. 发明申请

US20070138397A1 DIODE DESIGN TO REDUCE THE EFFECTS OF RADIATION DAMAGE 有权
标题翻译：二极管设计，以减少辐射损害的影响
公开(公告)号：US20070138397A1
公开(公告)日：2007-06-21
申请号：US11300815
申请日：2005-12-15
申请人： Scott Zelakiewicz , Snezana Bogdanovich , Aaron Couture , Douglas Albagli , William Hennessy
发明人： Scott Zelakiewicz , Snezana Bogdanovich , Aaron Couture , Douglas Albagli , William Hennessy
IPC分类号： G01T1/24
CPC分类号： G01T1/2928 , G01T1/2018
摘要： A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.
摘要翻译：用于X射线应用的光电检测器包括在每个像素位置处的光电二极管，其被门控以减少电荷从光电二极管的泄漏。栅极层可以围绕检测器的整个周边边缘设置，并且与接触层保持在共同的电位，或者处于不同的电位。钝化或介电层将栅极层与光电二极管分开。通过栅极层减少可能由于延长的辐射暴露而导致的二极管边缘周围的泄漏。

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