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1. 发明授权

US06740884B2 Imaging array and methods for fabricating same 有权
标题翻译：成像阵列及其制造方法
公开(公告)号：US06740884B2
公开(公告)日：2004-05-25
申请号：US10116469
申请日：2002-04-03
申请人： Ji Ung Lee , Douglas Albagli , George Edward Possin , Ching-Yeu Wei
发明人： Ji Ung Lee , Douglas Albagli , George Edward Possin , Ching-Yeu Wei
IPC分类号： H01L2100
CPC分类号： H01L27/14658
摘要： A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.
摘要翻译：一种辐射检测器，包括：一个包括源电极，漏电极，栅电极，第一电介质层和第二电介质层的顶栅极薄膜晶体管，其中第二电介质层在第一电介质层的表面上延伸电介质层。辐射检测器还包括包括至少两个电极和电介质层的电容器。电容器电介质层与TFT第二电介质层一体地形成。

2. 发明授权

US06784434B2 Imaging array and method for manufacturing same 有权
标题翻译：成像阵列及其制造方法
公开(公告)号：US06784434B2
公开(公告)日：2004-08-31
申请号：US10183904
申请日：2002-06-25
申请人： William Andrew Hennessy , Douglas Albagli , Ji Ung Lee , Ching-Yeu Wei
发明人： William Andrew Hennessy , Douglas Albagli , Ji Ung Lee , Ching-Yeu Wei
IPC分类号： G01T124
CPC分类号： H01L27/14658 , H01L27/14692
摘要： A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.
摘要翻译：一种用于制造包括至少一个薄膜晶体管（TFT）的辐射检测器的方法包括在TFT上形成与光阻挡元件一体的低电阻数据线条带。

3. 发明授权

US06559506B1 Imaging array and methods for fabricating same 有权
标题翻译：成像阵列及其制造方法
公开(公告)号：US06559506B1
公开(公告)日：2003-05-06
申请号：US10115829
申请日：2002-04-03
申请人： Ji Ung Lee , George Edward Possin
发明人： Ji Ung Lee , George Edward Possin
IPC分类号： H01L2701
CPC分类号： H01L27/14658 , H01L27/14643
摘要： A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a TFT dielectric layer, a TFT semiconductive layer, and a TFT intrinsic amorphous silicon (a-Si) layer. The radiation detector also includes a capacitor including a first electrode, a second electrode substantially coplanar with the gate electrode, and a capacitor dielectric, the capacitor dielectric including a capacitor dielectric layer substantially coplanar with the TFT dielectric layer, a capacitor semiconductive layer substantially coplanar with the TFT semiconductive layer, and a capacitor a-Si layer substantially coplanar with the TFT a-Si layer.
摘要翻译：辐射检测器包括一个包括源电极，漏电极，栅电极，TFT电介质层，TFT半导体层和TFT本征非晶硅（a-Si）层的顶栅极薄膜晶体管（TFT）。放射线检测器还包括电容器，其包括第一电极，与栅电极基本上共面的第二电极和电容器电介质，电容器电介质包括与TFT电介质层基本共面的电容器电介质层，与TFT电介质层基本共面的电容器半导体层， TFT半导体层和与TFT a-Si层基本上共面的电容器a-Si层。

4. 发明授权

US06777685B2 Imaging array and methods for fabricating same 失效
标题翻译：成像阵列及其制造方法
公开(公告)号：US06777685B2
公开(公告)日：2004-08-17
申请号：US10116185
申请日：2002-04-03
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01L27146
CPC分类号： H01L27/14658
摘要： A radiation detector includes a top-gate thin film transistor (TFT) including a source electrode, a drain electrode, and a gate electrode, and a diode electrically coupled to the source electrode.
摘要翻译：辐射检测器包括：包括源电极，漏电极和栅电极的顶栅薄膜晶体管（TFT）和与源电极电耦合的二极管。

5. 发明授权

US06552477B2 Field emission display backplates 失效
标题翻译：场发射显示背板
公开(公告)号：US06552477B2
公开(公告)日：2003-04-22
申请号：US09244558
申请日：1999-02-03
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01J1304
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/30407
摘要： A field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.
摘要翻译：一种场发射显示背板，包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分。

6. 发明授权

US06394871B2 Method for reducing emitter tip to gate spacing in field emission devices 失效
标题翻译：在场致发射器件中减少发射极尖端与栅极间距的方法
公开(公告)号：US06394871B2
公开(公告)日：2002-05-28
申请号：US09945510
申请日：2001-08-30
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01J902
CPC分类号： H01J9/025
摘要： An improved structure and method are provided to decouple the gate dielectric thickness and the emitter tip to gate layer distance by etching the dielectric using ion bombardment. The ion bombardment, or ion etch, is performed prior to depositing the gate layer. The improved structure and method will allow a smaller distance between the emitter tip and the gate structure without having to decrease the thickness of the gate insulator layer. The smaller emitter tip to gate distance lowers the turn-on voltage which is highly desirable in such areas as beam optics and power dissipation.
摘要翻译：提供改进的结构和方法，通过使用离子轰击蚀刻电介质来将栅极电介质厚度和发射极尖端去除栅极层距离。离子轰击或离子蚀刻在沉积栅极层之前进行。改进的结构和方法将允许发射极尖端和栅极结构之间的距离更小，而不必减小栅极绝缘体层的厚度。较小的发射极尖端到栅极距离降低了导通电压，这在诸如光束光学和功率耗散的区域中是非常需要的。

7. 发明授权

US07378715B2 Free-standing electrostatically-doped carbon nanotube device 失效
标题翻译：独立静电掺杂碳纳米管装置
公开(公告)号：US07378715B2
公开(公告)日：2008-05-27
申请号：US11060667
申请日：2005-02-18
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01L31/058
CPC分类号： B81C1/00142 , B82B3/00 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G11C13/025 , H01L29/0665 , H01L29/0673 , H01L29/861 , H01L33/18 , H01L33/24 , H01L33/34 , H01L51/002 , H01L51/0048 , H01L51/0508 , H01L51/0512 , H01L51/0545 , H01L51/055 , H01L51/0554 , H01L51/0558 , H01L51/5012 , H01L51/5262 , Y02E10/549 , Y10S977/742 , Y10S977/938
摘要： A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.
摘要翻译：描述了用于形成独立静电掺杂碳纳米管器件的方法和相关结构。该方法包括在基板上提供具有独立部分的碳纳米管。形成碳纳米管的独立部分的一种方法是去除基底的一部分。形成碳纳米管的独立部分的另一种描述的方法是在第一基板部分上设置一对金属电极，去除与金属电极相邻的第一基板部分的部分，并且将第二基板部分保形地设置在第一衬底部分以形成沟槽。

8. 发明授权

US06710539B2 Field emission devices having structure for reduced emitter tip to gate spacing 失效
标题翻译：具有用于减小发射极尖端到栅极间隔的结构的场致发射器件
公开(公告)号：US06710539B2
公开(公告)日：2004-03-23
申请号：US09145595
申请日：1998-09-02
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01J1304
CPC分类号： H01J9/025
摘要： An improved structure and method are provided to decouple the gate dielectric thickness and the emitter tip to gate layer distance by etching the dielectric using ion bombardment. The ion bombardment, or ion etch, is performed prior to depositing the gate layer. The improved structure and method will allow a smaller distance between the emitter tip and the gate structure without having to decrease the thickness of the gate insulator layer. The smaller emitter tip to gate distance lowers the turn-on voltage which is highly desirable in such areas as beam optics and power dissipation.
摘要翻译：提供改进的结构和方法，通过使用离子轰击蚀刻电介质来将栅极电介质厚度和发射极尖端去除栅极层距离。离子轰击或离子蚀刻在沉积栅极层之前进行。改进的结构和方法将允许发射极尖端和栅极结构之间的距离更小，而不必减小栅极绝缘体层的厚度。较小的发射极尖端到栅极距离降低了导通电压，这在诸如光束光学和功率耗散的区域中是非常需要的。

9. 发明授权

US06464550B2 Methods of forming field emission display backplates 失效
标题翻译：形成场发射显示背板的方法
公开(公告)号：US06464550B2
公开(公告)日：2002-10-15
申请号：US09838845
申请日：2001-04-20
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01J902
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/30407
摘要： The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.
摘要翻译：本发明包括场发射显示背板和形成场发射显示背板的方法。根据一个方面，本发明提供一种场发射显示器背板，其包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分。

10. 发明授权

US06890780B2 Method for forming an electrostatically-doped carbon nanotube device 失效
标题翻译：形成静电掺杂碳纳米管器件的方法
公开(公告)号：US06890780B2
公开(公告)日：2005-05-10
申请号：US10683895
申请日：2003-10-10
申请人： Ji Ung Lee
发明人： Ji Ung Lee
IPC分类号： H01L21/00 , H01L29/12 , H01L29/26 , H01L33/24 , H01L51/00 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y20/00 , G11C13/025 , H01L33/24 , H01L51/002 , H01L51/0048 , H01L51/0512 , Y10S977/742 , Y10S977/842 , Y10S977/95
摘要： The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube, and disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube. The method further includes disposing a first metal electrode adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube, and disposing a second metal electrode adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube. The method still further includes selectively applying a first bias to the first metal electrode to electrostatically dope the first end of the carbon nanotube and selectively applying a second bias to the second metal electrode to electrostatically dope the second end of the carbon nanotube.
摘要翻译：本发明提供了一种用于形成静电掺杂碳纳米管器件的方法和相关结构。该方法包括提供具有第一端和第二端的碳纳米管。该方法还包括将直接与碳纳米管的第一端直接相邻的第一金属触点设置，其中第一金属触点电耦合到碳纳米管的第一端，并且将第二金属触点直接邻近于碳纳米管的第二端所述碳纳米管，其中所述第二金属触点电耦合到所述碳纳米管的第二端。该方法还包括在碳纳米管的第一端附近设置第一金属电极，并且与碳纳米管的第一端相距一定距离，其中第一金属电极电容耦合到碳纳米管的第一端，并且设置第二金属电极在距离碳纳米管的第二端一定距离处，其中第二金属电极电容耦合到碳纳米管的第二端。该方法还包括：选择性地向第一金属电极施加第一偏压以静电地掺杂碳纳米管的第一端，并选择性地向第二金属电极施加第二偏压，以静电地掺杂碳纳米管的第二端。

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