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1. 发明授权

US07968926B2 Logic non-volatile memory cell with improved data retention ability 有权
标题翻译：具有提高数据保留能力的逻辑非易失性存储单元
公开(公告)号：US07968926B2
公开(公告)日：2011-06-28
申请号：US12022943
申请日：2008-01-30
申请人： Chin-Yi Huang , Te-Hsun Hsu , Cheng Hsiang Huang
发明人： Chin-Yi Huang , Te-Hsun Hsu , Cheng Hsiang Huang
IPC分类号： H01L27/112
CPC分类号： H01L27/115 , G11C16/0441 , G11C2216/10 , H01L27/11521 , H01L27/11558
摘要： A memory cell includes a semiconductor substrate; and a first, a second, and a third transistor. The first transistor includes a first dielectric over the semiconductor substrate; and a first floating gate over the first dielectric. The second transistor is electrically coupled to the first transistor and includes a second dielectric over the semiconductor substrate; and a second floating gate over the second dielectric. The first and the second floating gates are electrically disconnected. The memory cell further includes a first capacitor; a second capacitor electrically coupled to the first capacitor; a third capacitor; a fourth capacitor electrically coupled to the third capacitor, wherein each of the first, the second, the third and the fourth capacitors includes the semiconductor substrate as one of the capacitor plates. The third transistor is a selector of the memory cell and is electrically coupled to the first and the second transistors.
摘要翻译：存储单元包括半导体衬底; 以及第一，第二和第三晶体管。第一晶体管包括半导体衬底上的第一电介质; 以及在第一电介质上的第一浮动栅极。第二晶体管电耦合到第一晶体管，并且在半导体衬底上包括第二电介质; 以及在第二电介质上的第二浮栅。第一和第二浮栅电气断开。存储单元还包括第一电容器; 电耦合到所述第一电容器的第二电容器; 第三电容器; 电耦合到第三电容器的第四电容器，其中第一，第二，第三和第四电容器中的每一个包括作为电容器板之一的半导体衬底。第三晶体管是存储单元的选择器，并且电耦合到第一和第二晶体管。

2. 发明申请

US20090159946A1 Logic Non-Volatile Memory Cell with Improved Data Retention Ability 有权
标题翻译：具有改进的数据保留能力的逻辑非易失性存储器单元
公开(公告)号：US20090159946A1
公开(公告)日：2009-06-25
申请号：US12022943
申请日：2008-01-30
申请人： Chin-Yi Huang , Te-Hsun Hsu , Cheng Hsiang Huang
发明人： Chin-Yi Huang , Te-Hsun Hsu , Cheng Hsiang Huang
IPC分类号： H01L27/115
CPC分类号： H01L27/115 , G11C16/0441 , G11C2216/10 , H01L27/11521 , H01L27/11558
摘要： A memory cell includes a semiconductor substrate; and a first, a second, and a third transistor. The first transistor includes a first dielectric over the semiconductor substrate; and a first floating gate over the first dielectric. The second transistor is electrically coupled to the first transistor and includes a second dielectric over the semiconductor substrate; and a second floating gate over the second dielectric. The first and the second floating gates are electrically disconnected. The memory cell further includes a first capacitor; a second capacitor electrically coupled to the first capacitor; a third capacitor; a fourth capacitor electrically coupled to the third capacitor, wherein each of the first, the second, the third and the fourth capacitors includes the semiconductor substrate as one of the capacitor plates. The third transistor is a selector of the memory cell and is electrically coupled to the first and the second transistors.
摘要翻译：存储单元包括半导体衬底; 以及第一，第二和第三晶体管。第一晶体管包括半导体衬底上的第一电介质; 以及在第一电介质上的第一浮动栅极。第二晶体管电耦合到第一晶体管，并且在半导体衬底上包括第二电介质; 以及在第二电介质上的第二浮栅。第一和第二浮栅电气断开。存储单元还包括第一电容器; 电耦合到所述第一电容器的第二电容器; 第三电容器; 电耦合到第三电容器的第四电容器，其中第一，第二，第三和第四电容器中的每一个包括作为电容器板之一的半导体衬底。第三晶体管是存储单元的选择器，并且电耦合到第一和第二晶体管。

3. 发明授权

US09534588B2 Gravity-assisted rotational mechanism and generator device cooperating therewith 有权
标题翻译：与其配合的重力辅助旋转机构和发电机装置
公开(公告)号：US09534588B2
公开(公告)日：2017-01-03
申请号：US14509158
申请日：2014-10-08
申请人： Ting Yen Huang , Cheng Chieh Huang , Cheng Hsiang Huang
发明人： Ting Yen Huang , Cheng Chieh Huang , Cheng Hsiang Huang
IPC分类号： F03G3/00 , H02K53/00 , A63H33/00 , A63H1/18 , F03G7/10 , A63H33/26
CPC分类号： F03G3/00 , A63H1/18 , A63H33/00 , A63H33/26 , F03G7/10 , H02K53/00 , Y10S74/09
摘要： A gravity-assisted rotational mechanism and a generator device cooperating therewith. The gravity-assisted rotational mechanism includes multiple concentric rotational members having different sizes and rotatable about the same rotational center, several link members having equal weights for driving the same, and at least one connection member for pivotally connecting the rotational members with the link members. The rotational members can symmetrically push/pull each other. The link members and connection member are respectively mounted on interference sections of at least some of the rotational members to absorb gravitational energy. The energy of the link members is transmitted via the interference sections to the rotational members to form a cycle of energy storage and transmission. The generator device serves to convert the gravitational energy and minimize the rotational inertia loss and increase yield rate of electrical energy.
摘要翻译：重力辅助旋转机构和与其配合的发电机装置。重力辅助旋转机构包括具有不同尺寸并且可围绕相同旋转中心旋转的多个同心旋转构件，具有用于驱动相同重量的多个连杆构件以及用于将旋转构件与连杆构件枢转连接的至少一个连接构件。旋转构件可以对称地推/拉。连杆构件和连接构件分别安装在至少一些旋转构件的干涉部分上以吸收重力。连杆构件的能量通过干涉区段传递到旋转构件，以形成能量储存和传输的循环。发电机装置用于转换重力并最小化旋转惯性损失并提高电能的产率。

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