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1. 发明授权

US07544535B2 Method for manufacturing semiconductor laser element 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US07544535B2
公开(公告)日：2009-06-09
申请号：US11625617
申请日：2007-01-22
申请人： Chikara Watatani , Toru Ota , Takashi Nagira
发明人： Chikara Watatani , Toru Ota , Takashi Nagira
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2224 , H01S5/34306 , H01S2304/04
摘要： The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated structure to form a mesa; forming a first burying layer at a first growing temperature so as to coat the side of the mesa; and forming a second burying layer at a second growing temperature higher than the first growing temperature on the first burying layer to bury the circumference of the mesa.
摘要翻译：根据本发明的半导体激光元件的制造方法具有以下步骤：形成具有由含有Al的半导体材料构成的有源层的半导体层叠结构体; 蚀刻半导体层叠结构以形成台面; 在第一生长温度下形成第一掩埋层以涂覆所述台面的一侧; 以及在所述第一掩埋层上高于所述第一生长温度的第二生长温度下形成第二掩埋层以埋置所述台面的周长。

2. 发明申请

US20080032435A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US20080032435A1
公开(公告)日：2008-02-07
申请号：US11625617
申请日：2007-01-22
申请人： Chikara Watatani , Toru Ota , Takashi Nagira
发明人： Chikara Watatani , Toru Ota , Takashi Nagira
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2224 , H01S5/34306 , H01S2304/04
摘要： The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated structure to form a mesa; forming a first burying layer at a first growing temperature so as to coat the side of the mesa; and forming a second burying layer at a second growing temperature higher than the first growing temperature on the first burying layer to bury the circumference of the mesa.
摘要翻译：根据本发明的半导体激光元件的制造方法具有以下步骤：形成具有由含有Al的半导体材料构成的有源层的半导体层叠结构体; 蚀刻半导体层叠结构以形成台面; 在第一生长温度下形成第一掩埋层以涂覆所述台面的一侧; 以及在所述第一掩埋层上高于所述第一生长温度的第二生长温度下形成第二掩埋层以埋置所述台面的周长。

3. 发明申请

US20090260780A1 METHOD AND APPARATUS FOR COOLING BREAD JUST AFTER BAKED 审中-公开
标题翻译：烘烤后的方法和装置
公开(公告)号：US20090260780A1
公开(公告)日：2009-10-22
申请号：US12092647
申请日：2005-11-04
申请人： Yoichi Katori , Toru Ota , Satoshi Tsutsumi
发明人： Yoichi Katori , Toru Ota , Satoshi Tsutsumi
IPC分类号： F28F5/00 , F26B3/02 , F26B25/08 , A23L1/00
CPC分类号： A21D15/02 , A21C15/00 , F25D13/067
摘要： A method and apparatus for cooling bread just after baked are proposed in which bread f just after baked is transferred on a conveyor 2 into a cooling chamber 1 and carried out therefrom after it is allowed to reside therein for a period of time needed for cooling, inside temperature of the cooling chamber is maintained at 5-20° C., hydrated air m is supplied in an upstream side part of the transfer direction of the conveyor where temperature is highest in the cooling chamber 1 to form an atmosphere of high absolute humidity around the transfer passage of the bread f by virtue of the heat of the bread f just after baked, by which the transfer space 3 surrounding the transfer passage of the conveyor 2 is rendered highly humid with relative humidity of 60% or higher, as a result, cooling time is reduced, eating quality is maintained by preventing evaporation of water from the bread while it is cooled just after it is baked, process yield is increased resulting in a reduced processing cost, temperature in the center part of the bread is properly lowered so that the bread can be cut well without developing a rough cut surface.
摘要翻译：提出了一种在烘烤之后冷却面包的方法和装置，其中烘烤后的面包f在传送带2上被转移到冷却室1中，并在其被放置在冷却所需的时间段之后从其中进行，冷却室的内部温度保持在5-20℃，在冷却室1中温度最高的输送机的输送方向的上游侧部分供给水合空气，形成高绝对湿度的气氛围绕传送通道的面包f由于刚刚烘烤后的面包f的热量，传送带2的传送通道周围的传送空间3变得高度相对湿度为60％以上，作为结果，降低冷却时间，通过防止水从面包中蒸发而保持饮食质量，同时在烘烤之后立即冷却，加工产率增加，从而减少了处理剂 st，正确地降低面包中心部分的温度，使面包切割得好，而不会形成粗糙的切面。

4. 发明授权

US07061963B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07061963B2
公开(公告)日：2006-06-13
申请号：US10421797
申请日：2003-04-24
申请人： Masayoshi Takemi , Toru Ota , Shiro Ryochiku
发明人： Masayoshi Takemi , Toru Ota , Shiro Ryochiku
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/1231 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S5/34306 , H01S5/34373
摘要： A semiconductor laser device includes an n type diffraction grating layer of n-InGaAsP on an n-InP substrate, and having through-holes periodically disposed alongside of one another in a laser optical waveguide direction, an n-InP layer containing S as a dopant impurity in a concentration of at least 1×1019 cm−3. The through holes are buried in the n-InP layer, and an active layer is disposed on both the n-InP layer and the diffraction grating layer through an n-InP cladding layer.
摘要翻译：半导体激光装置包括在n-InP衬底上的n型InGaAsP的n型衍射光栅层，并且具有沿激光光波导方向彼此并列地周期性地设置的通孔，含有S作为掺杂剂的n-InP层浓度至少为1×10 9 cm -3的杂质。通孔被埋在n-InP层中，并且有源层通过n-InP包层设置在n-InP层和衍射光栅层两者上。

5. 发明授权

US5567730A Method of stabilizing an .omega.-3 unsaturated fatty acid compound 失效
标题翻译：稳定ω-3不饱和脂肪酸化合物的方法
公开(公告)号：US5567730A
公开(公告)日：1996-10-22
申请号：US385573
申请日：1995-02-08
申请人： Kazuo Miyashita , Toru Ota , Suguru Okazaki , Masazumi Nishikawa , Kazuaki Maruyama
发明人： Kazuo Miyashita , Toru Ota , Suguru Okazaki , Masazumi Nishikawa , Kazuaki Maruyama
IPC分类号： A23D9/007 , A23C9/152 , A23C11/04 , A23D9/00 , A23D9/06 , A23L1/30 , A23L2/52 , C07C51/50 , C07C57/03 , C07C57/12 , C07C67/48 , C07C67/62 , C07C69/587 , C11B5/00 , A61K31/22 , A61K31/20
CPC分类号： A23C9/1528 , A23C11/04 , A23D9/06 , A23L2/52 , A23L33/12 , C07C51/50 , C07C67/62 , C11B5/0007
摘要： A method of stabilizing .omega.-3 unsaturated fatty acid compounds comprising dispersing one or more compounds selected from a group consisting of an .omega.-3 unsaturated fatty acid, its derivative and an oil and fat containing the .omega.-3 unsaturated fatty acid or the derivative in an aqueous solution, is presented. .omega.-3 Unsaturated fatty acids such as DHA and EPA which have been regarded as unstable can be kept under stable conditions.
摘要翻译：一种稳定ω-3不饱和脂肪酸化合物的方法，其包括将一种或多种选自ω-3不饱和脂肪酸，其衍生物和含有ω-3不饱和脂肪酸或其衍生物的油脂的化合物分散在提出了一种水溶液。已被认为不稳定的ω-3不饱和脂肪酸如DHA和EPA可以保持在稳定的条件下。

6. 发明申请

US20120189611A1 DIPEPTIDYL PEPTIDASE-4 INHIBITOR 审中-公开
公开(公告)号：US20120189611A1
公开(公告)日：2012-07-26
申请号：US13388913
申请日：2010-08-03
申请人： Yuji Tominaga , Shinichi Yokota , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa , Hiroshi Tachi , Toru Ota
发明人： Yuji Tominaga , Shinichi Yokota , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa , Hiroshi Tachi , Toru Ota
IPC分类号： A61K35/66 , C12P21/06 , A61P3/10
CPC分类号： A61K38/168 , A23L33/10 , A23L33/18 , A61K36/48 , C12P21/06 , C12Y304/14005 , Y02P20/52
摘要： The present invention aims to provide a DPP-4 inhibitor that is obtained by using a food as a raw material and that is suitable for oral ingestion from the viewpoints of flavor and absorbability, and a composition for the prevention and/or amelioration of diabetes which contains the DPP-4 inhibitor. The present invention provides a DPP-4 inhibitor obtained by treating an azuki bean or a kidney bean with a microorganism or a proteolytic enzyme produced by the microorganism. In particular, a preferable DPP-4 inhibitor can be obtained by hydrolyzing an azuki bean with a koji mold or a proteolytic enzyme derived from the koji mold to fragment a protein in the azuki bean.
摘要翻译：本发明的目的在于提供一种DPP-4抑制剂，其是从味道和吸收性的观点出发，通过使用食品作为原料，适用于口服摄取的DPP-4抑制剂，以及用于预防和/或改善糖尿病的组合物含有DPP-4抑制剂。本发明提供通过微生物或微生物产生的蛋白水解酶处理芸豆或芸豆而获得的DPP-4抑制剂。特别地，优选的DPP-4抑制剂可以通过用曲霉霉素或衍生自曲霉菌的蛋白水解酶水解azuki豆来分解azuki bean中的蛋白质来获得。

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