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    • 1. 发明授权
    • Liquid level indication device
    • 液位指示装置
    • US4845986A
    • 1989-07-11
    • US894919
    • 1986-08-08
    • Chikahisa HayashiMakoto KawaiYoshikazu Hirose
    • Chikahisa HayashiMakoto KawaiYoshikazu Hirose
    • G01F23/72
    • G01F23/72
    • A liquid level indicator for detecting a liquid level by utilizing the variation inductance of a coil having a core made of an electrical insulating magnetic material and provided inside a winding of the coil. The core may be made by piling a plurality of thin, plate-shaped conductive materials one on another in the cross-sectional direction of the coil so that they are insulated from each other or by winding a conductive magnetic material at least one turn in the form of a roll so that a closed loop current is not formed in the cross-sectional direction of the coil. An eddy current loss of the core so arranged is so small that it can be disregarded. Furthermore, the winding component of the core itself is substantially released in the equivalent circuit of the coil.
    • 一种液位指示器,用于通过利用具有由电绝缘磁性材料制成的芯并且设置在线圈的绕组内的线圈的变化电感来检测液位。 芯可以通过在线圈的横截面方向上一个接一个地堆叠多个薄的板状导电材料制成,使得它们彼此绝缘或者通过将导电磁性材料卷绕在至少一个转弯处 使得在线圈的横截面方向上不形成闭环电流。 如此排列的核心的涡流损耗非常小,可以忽略。 此外,芯本身的绕组部件基本上被释放在线圈的等效电路中。
    • 3. 发明授权
    • Liquid level gauge
    • 液位计
    • US4891980A
    • 1990-01-09
    • US199154
    • 1988-05-26
    • Makoto KawaiChikahisa HayashiYoshikazu HiroseTatsuya Terayama
    • Makoto KawaiChikahisa HayashiYoshikazu HiroseTatsuya Terayama
    • G01F23/62G01F23/68G01V3/10
    • G01F23/68G01V3/102
    • A liquid level gauge comprising a core disposed inside a liquid container that has a cross sectional configuration that varies in the direction of its height, the core extending in the vertical direction and isolated from the liquid, a coil wound around the core in the direction of the length of the core, the coil comprising a densely wound portion formed at one end of the core and a thinly wound portion wound around the remaining part of the core, a conductor ring disposed around the outer circumference of the coil and is movable in the direction of the length of the coil according to the liquid level inside the container, a detecting portion that detects the change in the inductance of the coil according to the displacement of the conductor ring, a transforming portion that transforms the change in the inductance of the coil to a change in an electric signal, and a display portion that displays the quantity of the liquid inside te container, corresponding to the electric signal, the thinly wound portion having a winding density that varies in steps along the length of the core and the display portion displaying a value proportional to the quantity of the liquid inside the container.
    • 一种液位计,包括设置在液体容器内部的芯体,所述芯体具有在其高度方向上变化的横截面形状,所述芯体在垂直方向上延伸并且与液体隔离;线圈, 芯的长度,线圈包括形成在芯的一端处的致密缠绕部分和缠绕在芯的剩余部分上的薄卷绕部分,导体环设置在线圈的外周周围并且可在该线圈的外周移动 根据容器内的液面的线圈长度的方向,检测部,根据导体环的位移检测线圈的电感变化;变换部,其变换电感的变化, 线圈到电信号的变化,以及显示部分,其显示对应于电信号的te容器内的液体的量, 具有卷绕密度的薄卷绕部分,该卷绕密度沿着芯的长度逐步变化,并且显示部分显示与容器内的液体量成比例的值。
    • 6. 发明授权
    • Liquid level gauge
    • 液位计
    • US4981039A
    • 1991-01-01
    • US375671
    • 1989-07-05
    • Chikahisa HayashiMakoto KawaiToshinori TakahashiMitsuhiro Kikuta
    • Chikahisa HayashiMakoto KawaiToshinori TakahashiMitsuhiro Kikuta
    • G01F23/74G01K13/10H01H36/02
    • H01H36/02G01F23/74G01K13/10
    • A gauge for detecting both the temperature and surface level of a fluid within a container. The gauge includes an elongated casing which extends into the fluid. A float which rises and falls with the fluid surface is slidably coupled to the casing and carries a magnet. A support member positioned within the casing carries both a sensor for determining the position of the magnet and a sensor for measuring the fluid temperature. The surface level of the fluid can be determined from the position of the magnet. A heat conducting element thermally couples the temperature detecting sensor to the fluid. In a preferred embodiment, the support member takes the form of a printed board. In a separate preferred aspect, the temperature and magnet detecting sensors are reed switches which are vertically spaced apart yet aligned in parallel to minimize interference.
    • 用于检测容器内的流体的温度和表面水平的量规。 该计量器包括延伸到流体中的细长壳体。 与流体表面一起上升和下降的浮子可滑动地联接到壳体并承载磁体。 定位在壳体内的支撑构件承载用于确定磁体位置的传感器和用于测量流体温度的传感器。 流体的表面水平可以从磁体的位置确定。 导热元件将温度检测传感器热耦合到流体。 在优选实施例中,支撑构件采取印刷板的形式。 在单独的优选方面,温度和磁体检测传感器是螺旋开关,它们是垂直间隔开的,但并联排列,以最小化干扰。
    • 9. 发明授权
    • Method for manufacturing SOI wafer
    • 制造SOI晶圆的方法
    • US08268700B2
    • 2012-09-18
    • US12153160
    • 2008-05-14
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • H01L21/30
    • H01L21/76254
    • There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
    • 公开了一种制造SOI晶片的方法,该方法至少包括:将氢离子,稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面,从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理,把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层,由此降低其膜厚以提供SOI层,并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。