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1. 发明申请

US20080044756A1 METHOD OF FINE PITCH BUMP STRIPPING 有权
标题翻译：精细抛光袋剥离方法
公开(公告)号：US20080044756A1
公开(公告)日：2008-02-21
申请号：US11465375
申请日：2006-08-17
申请人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Y. L. Feng , Tung-Wen Hsieh
发明人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Y. L. Feng , Tung-Wen Hsieh
IPC分类号： G03C11/12
CPC分类号： G03F7/422
摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.
摘要翻译：从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生，晶片在垂直位置处理。然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

2. 发明授权

US07781140B2 Method of fine pitch bump stripping 有权
标题翻译：细间距凸块剥离方法
公开(公告)号：US07781140B2
公开(公告)日：2010-08-24
申请号：US11465375
申请日：2006-08-17
申请人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Yu-Lung Feng , Tung-Wen Hsieh
发明人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Yu-Lung Feng , Tung-Wen Hsieh
IPC分类号： G03F7/42 , B08B3/08 , B08B3/10
CPC分类号： G03F7/422
摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.
摘要翻译：从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生，晶片在垂直位置处理。然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

3. 发明申请

US20060194407A1 APPLICATION OF IMPRESSED-CURRENT CATHODIC PROTECTION TO PREVENT METAL CORROSION AND OXIDATION 有权
标题翻译：应用减少电流阴极保护以防止金属腐蚀和氧化
公开(公告)号：US20060194407A1
公开(公告)日：2006-08-31
申请号：US11382500
申请日：2006-05-10
申请人： Kai-Ming Ching , Chia Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Wen-Hsiang Tseng
发明人： Kai-Ming Ching , Chia Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Wen-Hsiang Tseng
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L21/76838 , H01L24/11 , H01L24/12 , H01L2223/54453 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/1147 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/30105 , H01L2224/05647 , H01L2924/00014 , H01L2224/05671 , H01L2224/05124 , H01L2224/05147
摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.
摘要翻译：提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

4. 发明授权

US07468321B2 Application of impressed-current cathodic protection to prevent metal corrosion and oxidation 有权
标题翻译：应用电流阴极保护，防止金属腐蚀和氧化
公开(公告)号：US07468321B2
公开(公告)日：2008-12-23
申请号：US11382500
申请日：2006-05-10
申请人： Kai-Ming Ching , Chia-Fu Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Wen-Hsiang Tseng
发明人： Kai-Ming Ching , Chia-Fu Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Wen-Hsiang Tseng
IPC分类号： H01L21/44
CPC分类号： H01L23/544 , H01L21/76838 , H01L24/11 , H01L24/12 , H01L2223/54453 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/1147 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/30105 , H01L2224/05647 , H01L2924/00014 , H01L2224/05671 , H01L2224/05124 , H01L2224/05147
摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.
摘要翻译：提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

5. 发明授权

US06691738B2 Filler for airtight container 失效
标题翻译：填料用于密封容器
公开(公告)号：US06691738B2
公开(公告)日：2004-02-17
申请号：US09996335
申请日：2001-11-21
申请人： Wen-Chang Kuo , Szu-Yao Wang , Wen-Hsiang Tseng
发明人： Wen-Chang Kuo , Szu-Yao Wang , Wen-Hsiang Tseng
IPC分类号： G05D700
CPC分类号： B67D7/0288 , B67D7/344 , Y10T137/86332
摘要： The present invention is directed to a filler assembly for dispensing liquid to and from a container capable of storing an indicated liquid. The filler assembly has a portable part and a stationary part cooperating to provide a sealed dispensing means for communicating an indicated liquid from an indicated liquid source to a container and for safely communicating the indicated liquid from the container to another location. The portable part and the stationary part are adapted to sealably mate together and further provide means for preventing misassembly of the two parts. The portable part provides dispensing means capable of communicating the liquid from the stationary part to a remote location. The stationary part is adapted to further sealably mate and communicate with a container capable of storing an indicated liquid.
摘要翻译：本发明涉及一种用于将液体分配到能够存储指定液体的容器中的填充器组件。填充器组件具有便携式部件和固定部件，其配合以提供密封的分配装置，用于将指示的液体从指示的液体源传送到容器并且用于将指示的液体从容器安全地传递到另一位置。便携式部件和固定部件适于密封地配合在一起，并且还提供用于防止两个部件的错误组装的装置。便携式部件提供能够将液体从静止部分传送到远程位置的分配装置。固定部分适于进一步密封地配合并与能够储存指定液体的容器连通。

6. 发明授权

US06918397B2 Flush system for dry film photoresist remover 失效
标题翻译：用于干膜光刻胶去除剂的冲洗系统
公开(公告)号：US06918397B2
公开(公告)日：2005-07-19
申请号：US10127086
申请日：2002-04-22
申请人： Ta-Min Lin , Szu-Yao Wang , Chia-Fu Lin , Kai-Ming Ching , Wen-Hsiang Tseng
发明人： Ta-Min Lin , Szu-Yao Wang , Chia-Fu Lin , Kai-Ming Ching , Wen-Hsiang Tseng
IPC分类号： B01D36/02 , B01D37/00 , B08B7/04 , B08B9/093
CPC分类号： B01D36/02 , B01D37/00
摘要： A flush system comprising a network of conduits, valves and screens that can be interposed between the process container and solvent re-claim tank components of a dry film photoresist (DFR) remover system, for example, that is used in the processing and packaging of integrated circuit chips. By operation of the valves in the flush system, DFR particles can be removed from the DFR remover system in order to prevent or minimize particle clogging of a particle filter in the DFR remover system. The screens in the flush system can be periodically cleaned by reverse flow of solvent or by operation of a nitrogen and DI (deionized) water purge system.
摘要翻译：一种冲洗系统，其包括可以介于干膜光致抗蚀剂（DFR）去除剂系统的处理容器和溶剂重新溶液罐组分之间的管道网络，阀门和筛网，例如用于加工和包装集成电路芯片。通过操作冲洗系统中的阀，可以从DFR去除器系统中去除DFR颗粒，以防止或最小化DFR去除器系统中的颗粒过滤器的颗粒堵塞。冲洗系统中的筛网可以通过溶剂的反向流动或通过操作氮气和DI（去离子水）清洗系统来定期清洁。

7. 发明授权

US06911097B1 Photoresist stripper using nitrogen bubbler 失效
标题翻译：使用氮气鼓泡机的光刻胶剥离器
公开(公告)号：US06911097B1
公开(公告)日：2005-06-28
申请号：US09629213
申请日：2000-07-31
申请人： Chie-Chi Chen , Wen-Hsiang Tseng , Sheng-Liang Pan , Jen-Shiang Fang
发明人： Chie-Chi Chen , Wen-Hsiang Tseng , Sheng-Liang Pan , Jen-Shiang Fang
IPC分类号： B08B3/10 , B08B5/00 , H01L21/00
CPC分类号： H01L21/67086 , B08B3/102 , Y10S438/906
摘要： Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.
摘要翻译：提供了一种工艺和装置，其特征在于气体分配板，其中气体供应歧管将处理罐底部的气泡向上引导到包含在盒中并在其中支撑的晶片之间。这种改进的方法和装置用于从具有突出侧壁的致密顶部导电图案的较大半导体晶片有效地剥离光致抗蚀剂。该方法提供了平行于在晶片表面上形成的器件阵列的擦洗动作。广泛地说，在载体附近支撑在其各个边缘部分上的大的基板上的化学作用的方法包括将载体和由其支撑的基板浸没在包含液体化学品的处理槽中，以及设置在罐的底部上的气体分配板用于将气泡向上引导并平行于包含在载体中的每个基底的表面，以确保发生均匀的化学作用。

8. 发明申请

US20100168929A1 METHOD OF DETERMINING DEMAND THRESHOLD, AND METHOD AND SYSTEM OF DEMAND CONTROL 有权
标题翻译：确定需求阈值的方法，以及需求控制的方法和系统
公开(公告)号：US20100168929A1
公开(公告)日：2010-07-01
申请号：US12539761
申请日：2009-08-12
申请人： Wen-Hsiang Tseng , Cheng-Ting Lin
发明人： Wen-Hsiang Tseng , Cheng-Ting Lin
IPC分类号： G06F1/32 , G06F1/28
CPC分类号： G06Q10/06 , G06Q50/06
摘要： A method of setting a demand threshold is provided. The method comprises: (a) a control unit arranging a plurality of demand data in a descending or an ascending order as a curve; (b) the control unit connecting a maximum demand datum and a minimum demand datum with a line; and (c) the control unit setting a demand datum with a longest perpendicular distance to the line as a demand threshold.
摘要翻译：提供了一种设置需求阈值的方法。该方法包括：（a）以降序或升序排列多个需求数据作为曲线的控制单元; （b）控制单元将最大需求基准和最小需求基准与一条线连接; 以及（c）所述控制单元将与所述线的最长垂直距离的需求基准设置为需求阈值。

9. 发明授权

US07276454B2 Application of impressed-current cathodic protection to prevent metal corrosion and oxidation 有权
标题翻译：应用电流阴极保护，防止金属腐蚀和氧化
公开(公告)号：US07276454B2
公开(公告)日：2007-10-02
申请号：US10286626
申请日：2002-11-02
申请人： Kai-Ming Ching , Chia Fu Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Li-Chih Chen
发明人： Kai-Ming Ching , Chia Fu Lin , Wen-Hsiang Tseng , Ta-Min Lin , Yen-Ming Chen , Hsin-Hui Lee , Chao-Yuan Su , Li-Chih Chen
IPC分类号： H01L21/302
CPC分类号： H01L23/544 , H01L21/76838 , H01L24/11 , H01L24/12 , H01L2223/54453 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/1147 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/30105 , H01L2224/05647 , H01L2924/00014 , H01L2224/05671 , H01L2224/05124 , H01L2224/05147
摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.
摘要翻译：提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

10. 发明授权

US08311680B2 Method of determining demand threshold, and method and system of demand control 有权
标题翻译：确定需求阈值的方法，需求控制的方法和系统
公开(公告)号：US08311680B2
公开(公告)日：2012-11-13
申请号：US12539761
申请日：2009-08-12
申请人： Wen-Hsiang Tseng , Cheng-Ting Lin
发明人： Wen-Hsiang Tseng , Cheng-Ting Lin
IPC分类号： G05B15/00 , G05B11/01 , G04F1/00 , G05D17/00 , G06F7/00
CPC分类号： G06Q10/06 , G06Q50/06
摘要： A method of setting a demand threshold is provided. A control unit arranges a plurality of demand data in a descending or an ascending order as a curve. The control unit connects a maximum demand datum and a minimum demand datum with a line. The control unit sets a demand datum with a longest perpendicular distance to the line as a demand threshold.
摘要翻译：提供了一种设置需求阈值的方法。控制单元以降序或升序排列多个需求数据作为曲线。控制单元将最大需求数据和最小需求基准线连接起来。控制单元将与线路最长垂直距离的需求基准设置为需求阈值。

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