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1. 发明申请

US20080044756A1 METHOD OF FINE PITCH BUMP STRIPPING 有权
标题翻译：精细抛光袋剥离方法
公开(公告)号：US20080044756A1
公开(公告)日：2008-02-21
申请号：US11465375
申请日：2006-08-17
申请人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Y. L. Feng , Tung-Wen Hsieh
发明人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Y. L. Feng , Tung-Wen Hsieh
IPC分类号： G03C11/12
CPC分类号： G03F7/422
摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.
摘要翻译：从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生，晶片在垂直位置处理。然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

2. 发明授权

US07781140B2 Method of fine pitch bump stripping 有权
标题翻译：细间距凸块剥离方法
公开(公告)号：US07781140B2
公开(公告)日：2010-08-24
申请号：US11465375
申请日：2006-08-17
申请人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Yu-Lung Feng , Tung-Wen Hsieh
发明人： Chih-Min Tseng , Hsiu-Mei Yu , Wen-Hsiang Tseng , Chia-Jen Cheng , Yu-Lung Feng , Tung-Wen Hsieh
IPC分类号： G03F7/42 , B08B3/08 , B08B3/10
CPC分类号： G03F7/422
摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.
摘要翻译：从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生，晶片在垂直位置处理。然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

3. 发明授权

US5951743A Method and apparatus for feeding exhaust gases to a wet scrubber 失效
标题翻译：将废气送入湿式洗涤器的方法和装置
公开(公告)号：US5951743A
公开(公告)日：1999-09-14
申请号：US986069
申请日：1997-12-05
申请人： Tung-Wen Hsieh , Kuo-Liang Lu , Bii-Junq Chang
发明人： Tung-Wen Hsieh , Kuo-Liang Lu , Bii-Junq Chang
IPC分类号： B01D47/06 , B01D53/14
CPC分类号： B01D47/06 , B01D53/14 , B01D53/1456
摘要： The present invention discloses an exhaust gas conduit for feeding exhaust gases to a scrubber wherein the conduit is equipped with a self-cleaning device mounted inside the conduit body adjacent to an outlet end of the conduit for dispensing a cleaning solvent onto the inside wall of the outlet end of the conduit such that solid depositions on the inside wall can be avoided. The present invention is also directed to a method for preventing solid depositions in an exhaust gas inlet port to a wet scrubber by utilizing a self-cleaning device mounted in a conduit adjacent to an outlet end of the exhaust conduit and by dispensing a cleaning solvent through the self-cleaning device and spraying the solvent onto an inside wall of the outlet end of the conduit to prevent the formation of solid depositions on the inside wall.
摘要翻译：本发明公开了一种用于将废气供给到洗涤器的排气管道，其中管道配备有自动清洁装置，该自清洁装置安装在导管主体内部，邻近导管的出口端，用于将清洁溶剂分配到内壁上导管的出口端可以避免内壁上的固体沉积。本发明还涉及一种用于通过利用安装在与排气导管的出口端相邻的导管中的自清洁装置并通过分配清洁溶剂而防止在废气进入端口中固体沉积到湿式洗涤器的方法自清洁装置并将溶剂喷射到导管的出口端的内壁上，以防止在内壁上形成固体沉积物。

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