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    • 7. 发明授权
    • Wafer heater assembly
    • 晶圆加热器总成
    • US5796074A
    • 1998-08-18
    • US565185
    • 1995-11-28
    • Sergio EdelsteinSteven A. ChenVijay D. Parkhe
    • Sergio EdelsteinSteven A. ChenVijay D. Parkhe
    • C30B35/00C23C14/50C23C16/458H01L21/02H01L21/205H01L21/31F27B5/14
    • C23C14/50C23C16/4586
    • A wafer heater assembly (8) for a deposition/etch chamber (2) includes a base (32) and a wafer support or chuck (36), having a wafer-chucking surface (76), spaced apart from the base by a circumferential barrier support (38). A heater sub-assembly (54) is mounted to the wafer support. Bolts (48) are used to secure the wafer support to the base with the barrier support therebetween to press the barrier support against an elastomeric O-ring, a metal V-seal or other fluid seal (46) positioned between the base and base end (42) of the barrier support. This eliminates the need to discard the entire heater assembly if the dielectric wafer-chucking surface becomes damaged. The temperature of the fluid seal is about 50.degree.-70.degree. C. lower than the temperature of the wafer-chucking surface when the wafer-chucking surface is about 200.degree.-300.degree. C.
    • 用于沉积/蚀刻室(2)的晶片加热器组件(8)包括基部(32)和具有晶片夹持表面(76)的晶片支撑或卡盘(36),所述晶片夹持表面与基部间隔开圆周 屏障支撑(38)。 加热器子组件(54)安装到晶片支撑件上。 螺栓(48)用于将晶片支撑件固定到底座上,其间具有阻挡支撑件,以将阻挡支撑件压靠在弹性体O形环,金属V形密封件或位于基部和基端之间的其它流体密封件(46) (42)。 这就消除了如果介质晶片夹紧表面损坏,则放弃整个加热器组件的需要。 当晶片夹紧表面约为200-300℃时,流体密封件的温度比晶片夹持表面的温度低约50-70℃。