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1. 发明申请

US20170352565A1 WORKPIECE CARRIER WITH GAS PRESSURE IN INNER CAVITIES 审中-公开
公开(公告)号：US20170352565A1
公开(公告)日：2017-12-07
申请号：US15364589
申请日：2016-11-30
申请人： Chunlei Zhang , Haitao Wang , Kartik Ramaswamy , Vijay D. Parkhe , Jaeyong Cho
发明人： Chunlei Zhang , Haitao Wang , Kartik Ramaswamy , Vijay D. Parkhe , Jaeyong Cho
IPC分类号： H01L21/683 , C23C16/46 , H01J37/32 , H01L21/687 , C23C16/505 , C23C16/455 , C23C16/458 , H01L21/67
CPC分类号： H01J37/32697 , C23C16/45565 , C23C16/4586 , C23C16/4587 , C23C16/466 , C23C16/505 , C23C16/5096 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01J2237/2007 , H01L21/67109 , H01L21/6831 , H01L21/68742
摘要： A workpiece carrier suitable for high power processes is described. It may include a top plate to support a workpiece, a lift pin to lift a workpiece from a top plate, a lift pin hole through the top plate to contain the lift pin, and a connector to the lift pin hole to connect to a source of gas under pressure to deliver a cooling gas, for example helium, to the back side of the workpiece.

2. 发明申请

US20170352568A1 HIGH POWER ELECTROSTATIC CHUCK WITH APERTURE-REDUCING PLUG IN A GAS HOLE 审中-公开
公开(公告)号：US20170352568A1
公开(公告)日：2017-12-07
申请号：US15383124
申请日：2016-12-19
申请人： Jaeyong Cho , Haitao Wang , Vijay D. Parkhe , Kartik Ramaswamy , Chunlei Zhang
发明人： Jaeyong Cho , Haitao Wang , Vijay D. Parkhe , Kartik Ramaswamy , Chunlei Zhang
IPC分类号： H01L21/683 , H01J37/32
摘要： An electrostatic chuck is described to carry a workpiece for processing such as high power plasma processing. In embodiments, the chuck includes a top plate to carry the workpiece, the top plate having an electrode to grip the workpiece, a cooling plate under the top plate to cool the top plate, a gas hole through the cooling plate and the top plate to feed a gas to the workpiece through the top plate, and an aperture-reducing plug in the cooling plate gas hole to conduct gas flow through the hole.

3. 发明申请

US20110009999A1 PLASMA REACTOR WITH RF GENERATOR AND AUTOMATIC IMPEDANCE MATCH WITH MINIMUM REFLECTED POWER-SEEKING CONTROL 审中-公开
标题翻译：具有RF发生器的等离子体反应器和具有最小反射功率控制的自动阻抗匹配
公开(公告)号：US20110009999A1
公开(公告)日：2011-01-13
申请号：US12502037
申请日：2009-07-13
申请人： Chunlei Zhang , Lawrence Wong , Kartik Ramaswamy , James P. Cruse , Hiroji Hanawa
发明人： Chunlei Zhang , Lawrence Wong , Kartik Ramaswamy , James P. Cruse , Hiroji Hanawa
IPC分类号： H01L21/306 , B05C11/00 , G06F19/00
CPC分类号： H01J37/32183 , H01J37/32091
摘要： An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.
摘要翻译：在等离子体电抗器的RF发生器输出端处的阻抗匹配包括多个最小寻求环路控制器，其具有耦合以从反射功率感测电路和相应控制输出端口接收反射的RF功率信号的各个反馈输入端口。输出端口耦合到连接在RF发生器和反应器的RF功率施加器之间的阻抗匹配电路的可变电抗。

4. 发明授权

US09338871B2 Feedforward temperature control for plasma processing apparatus 有权
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
申请人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
发明人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

5. 发明授权

US08513889B2 Methods and apparatus for tuning matching networks 有权
标题翻译：调整匹配网络的方法和装置
公开(公告)号：US08513889B2
公开(公告)日：2013-08-20
申请号：US12899048
申请日：2010-10-06
申请人： Chunlei Zhang , Sergio F. Shoji , Andrey Semenin , Kartik Ramaswamy , James P. Cruse , Bryan Liao
发明人： Chunlei Zhang , Sergio F. Shoji , Andrey Semenin , Kartik Ramaswamy , James P. Cruse , Bryan Liao
IPC分类号： H03H7/38
CPC分类号： H03H7/40 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.
摘要翻译：本文提供了用于调整匹配网络的方法和装置。调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

6. 发明申请

US20170323813A1 ADVANCED TEMPERATURE CONTROL FOR WAFER CARRIER IN PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：US20170323813A1
公开(公告)日：2017-11-09
申请号：US15217513
申请日：2016-07-22
申请人： Fernando M. Silveira , Chunlei Zhang , Phillip Criminale , Jaeyong Cho
发明人： Fernando M. Silveira , Chunlei Zhang , Phillip Criminale , Jaeyong Cho
IPC分类号： H01L21/67 , C23C16/50 , C23C16/56
CPC分类号： H01L21/67248 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/52 , C23C16/56 , H01J37/32715 , H01J37/32724 , H01J37/3299 , H01L21/67017 , H01L21/67103 , H01L21/67109
摘要： An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.

7. 发明申请

US20140370504A1 METHOD FOR DETECTING GENETIC VARIATION 审中-公开
标题翻译：检测遗传变异的方法
公开(公告)号：US20140370504A1
公开(公告)日：2014-12-18
申请号：US14369615
申请日：2011-12-31
申请人： Shengpei Chen , Chunlei Zhang , Fang Chen , Weiwei Xie , Xiaoyu Pan , Jian Wang , Jun Wang , Huanming Yang , Xiuqing Zhang
发明人： Shengpei Chen , Chunlei Zhang , Fang Chen , Weiwei Xie , Xiaoyu Pan , Jian Wang , Jun Wang , Huanming Yang , Xiuqing Zhang
IPC分类号： G06F19/22 , G06F17/18 , C12Q1/68
CPC分类号： G16B30/00 , C12Q1/6809 , C12Q1/6869 , G06F17/18 , C12Q2535/122 , C12Q2537/16 , C12Q2537/165
摘要： The present invention relates to a method for detecting genetic variation, comprising the following steps: acquiring reads from a test sample; aligning said reads with a reference genome sequence; dividing said reference genome sequence into windows, calculating the number of said reads which are aligned to each window, and acquiring the statistic for each window on the basis of the number of said reads; and for a fragment of the reference genome sequence, acquiring the genetic variation sites on the basis of the change in the statistics of all the windows thereon in the fragment of the reference genome sequence.
摘要翻译：本发明涉及一种检测遗传变异的方法，包括以下步骤：从测试样品获取读数; 将所述读数与参考基因组序列对齐; 将所述参考基因组序列划分为窗口，计算与每个窗口对齐的所述读取的数量，并且基于所述读取的数量获取每个窗口的统计量; 并且对于参考基因组序列的片段，基于参考基因组序列的片段中所有窗口的统计学变化来获取遗传变异位点。

8. 发明申请

US20140228226A1 METHOD AND SYSTEM FOR DETERMINING CHROMOSOME ANEUPLOIDY OF SINGLE CELL 审中-公开
标题翻译：用于确定单细胞色素沉着异常的方法和系统
公开(公告)号：US20140228226A1
公开(公告)日：2014-08-14
申请号：US14346067
申请日：2011-09-21
申请人： Xuyang Yin , Chunlei Zhang , Yong Qiu , Shengpei Chen , Hui Jiang , Jun Wang , Jian Wang
发明人： Xuyang Yin , Chunlei Zhang , Yong Qiu , Shengpei Chen , Hui Jiang , Jun Wang , Jian Wang
IPC分类号： G06F19/22 , C12Q1/68
CPC分类号： G16B30/00 , C12Q1/6869 , C12Q1/6881 , C12Q1/6883 , C12Q2600/156
摘要： Disclosed is a method for determining the chromosome aneuploidy of a single cell and a system for determining the chromosome aneuploidy of a single cell. Among them, the method for determining the chromosome aneuploidy of a single cell according to the embodiments of the present invention comprises: the whole genome of the single cell is sequenced to obtain a first sequencing result; the total number of sequencing data from the first sequencing result is counted, obtaining a value L; the number of sequencing data of a first chromosome from the first sequencing result is counted, obtaining a value M; a first parameter is determined based on the value L and the value M; and it is determined whether or not the single cell has aneuploidy in respect of the first chromosome based on the difference between the first parameter and a predetermined control parameter.
摘要翻译：公开了一种用于确定单个细胞的染色体非整倍性的方法和用于确定单细胞的染色体非整倍性的系统。其中，根据本发明实施方案的单细胞染色体非整倍性测定方法包括：对单细胞的全基因组进行测序以获得第一测序结果; 计算来自第一测序结果的测序数据的总数，获得值L; 对来自第一测序结果的第一染色体的测序数据的数量进行计数，获得值M; 基于值L和值M确定第一参数; 并且基于第一参数和预定控制参数之间的差来确定单细胞是否相对于第一染色体具有非整倍体。

9. 发明授权

US07848840B2 Method of controlling process parameters for semiconductor manufacturing apparatus 失效
标题翻译：控制半导体制造装置的工艺参数的方法
公开(公告)号：US07848840B2
公开(公告)日：2010-12-07
申请号：US12052024
申请日：2008-03-20
申请人： Ritchie Dao , Derek Brodie , Scott Olszewski , Duy D Nguyen , Chunlei Zhang
发明人： Ritchie Dao , Derek Brodie , Scott Olszewski , Duy D Nguyen , Chunlei Zhang
IPC分类号： G06F19/00 , G05B13/00 , G05B11/42 , G05D23/00
CPC分类号： G05D23/1904 , G05B11/42 , H01L21/67098 , H01L21/67248
摘要： Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.
摘要翻译：半导体制造设备中自动控制工艺参数的方法和系统。一个实施例提供了PID控制器在配方步骤中的增益调度。一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度，一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。

10. 发明申请

US20100107892A1 ADJUSTABLE TEMPERATURE ELECTROTHERMAL ROASTER 审中-公开
标题翻译：可调节温度电热器
公开(公告)号：US20100107892A1
公开(公告)日：2010-05-06
申请号：US12532747
申请日：2008-04-02
申请人： Yaohong Yeh , Chunlei Zhang
发明人： Yaohong Yeh , Chunlei Zhang
IPC分类号： A47J37/06 , H05B1/02
CPC分类号： A47J37/0611
摘要： An adjustable temperature electrothermal grill is provided. The present invention discloses a grill comprising a grill pan provided with a heating member, a temperature sensing member for sensing temperature of the grill pan. The heating member and the temperature sensing member are connected to a control circuit. The temperature sensing member provides the temperature signal of the grill pan to the control circuit. The grill further comprises a thermoregulation member and a high temperature switch. The thermoregulation member and the high temperature switch provide the temperature control signal to the control circuit. The control circuit controls the power on/off of the heating member based on the temperature signal of the grill pan and the temperature control signal.
摘要翻译：提供可调节温度的电热格栅。本发明公开了一种格栅，包括设置有加热构件的格栅盘，用于感测烤盘温度的温度检测构件。加热构件和感温构件连接到控制电路。温度检测构件将格栅的温度信号提供给控制电路。格栅还包括温度调节构件和高温开关。温度调节构件和高温开关向控制电路提供温度控制信号。控制电路基于格栅的温度信号和温度控制信号来控制加热部件的电源接通/断开。

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