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    • 1. 发明授权
    • Semiconductor device having gradient doping profile
    • 具有梯度掺杂分布的半导体器件
    • US08501569B2
    • 2013-08-06
    • US13157930
    • 2011-06-10
    • Chih-Hsiang HuangFeng-Cheng Yang
    • Chih-Hsiang HuangFeng-Cheng Yang
    • H01L21/336
    • H01L29/7833H01L29/513H01L29/6653H01L29/66545H01L29/66636
    • The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.
    • 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成栅极。 该方法包括执行第一注入工艺以在衬底中形成第一掺杂区域,第一掺杂区域与栅极相邻。 该方法包括执行第二注入工艺以在衬底中形成第二掺杂区域,第二掺杂区域比第一掺杂区域远离栅极形成,第二掺杂区域具有比第一掺杂区域更高的掺杂浓度水平 。 该方法包括去除第一和第二掺杂区域的部分以在衬底中形成凹陷。 该方法包括在凹槽中外延生长第三掺杂区域,第三掺杂区域具有比第二掺杂区域更高的掺杂浓度水平。
    • 2. 发明申请
    • SEMICONDUCTOR DEVICE HAVING GRADIENT DOPING PROFILE
    • 具有梯度抛光轮廓的半导体器件
    • US20120313167A1
    • 2012-12-13
    • US13157930
    • 2011-06-10
    • Chih-Hsiang HuangFeng-Cheng Yang
    • Chih-Hsiang HuangFeng-Cheng Yang
    • H01L21/336H01L29/78
    • H01L29/7833H01L29/513H01L29/6653H01L29/66545H01L29/66636
    • The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.
    • 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成栅极。 该方法包括执行第一注入工艺以在衬底中形成第一掺杂区域,第一掺杂区域与栅极相邻。 该方法包括执行第二注入工艺以在衬底中形成第二掺杂区域,第二掺杂区域比第一掺杂区域远离栅极形成,第二掺杂区域具有比第一掺杂区域更高的掺杂浓度水平 。 该方法包括去除第一和第二掺杂区域的部分以在衬底中形成凹陷。 该方法包括在凹槽中外延生长第三掺杂区域,第三掺杂区域具有比第二掺杂区域更高的掺杂浓度水平。
    • 5. 发明申请
    • Input Device
    • 输入设备
    • US20130127713A1
    • 2013-05-23
    • US13554052
    • 2012-07-20
    • Feng-Cheng YangChing-Lin ChungHsin-Chia ChenHui-Hsuan Chen
    • Feng-Cheng YangChing-Lin ChungHsin-Chia ChenHui-Hsuan Chen
    • G06F3/042G06F3/033
    • G06F3/0421G06F2203/04109
    • An input device comprising an optical module having a light guide plate, a light source, a scattering layer and a sensor is provided. The light guide plate has a top surface, a bottom surface, and a side. The light source emits a light to the side. The light travels within the light guide plate. The scattering layer changes a path of parts of the light on the bottom surface so that the light is projected out of the top surface to form a penetrating light. When an object approaches or touches the top surface of the light guide plate, at least a part of the penetrating light is reflected by the object to form a reflected light received by the sensor. According to the reflected light, the input device generates a position signal indicating at least one relative position of the object with respect to the top surface.
    • 一种包括具有导光板,光源,散射层和传感器的光学模块的输入装置。 导光板具有顶表面,底表面和侧面。 光源向侧面发光。 光在导光板内行进。 散射层改变底面上的光的部分路径,使得光从顶表面突出以形成穿透光。 当物体接近或接触导光板的顶表面时,穿透光的至少一部分被物体反射以形成由传感器接收的反射光。 根据反射光,输入装置产生指示物体相对于顶面的至少一个相对位置的位置信号。