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1. 发明申请

US20110013192A1 LOCALIZED SURFACE PLASMON RESONANCE SENSOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：本地化表面等离子体共振传感器及其制造方法
公开(公告)号：US20110013192A1
公开(公告)日：2011-01-20
申请号：US12698076
申请日：2010-02-01
申请人： Chih-Chung Yang , Cheng-Yen Chen , Jyh-Yang Wang , Yen-Cheng Lu , Hung-Yu Tseng , Fu-Ji Tsai
发明人： Chih-Chung Yang , Cheng-Yen Chen , Jyh-Yang Wang , Yen-Cheng Lu , Hung-Yu Tseng , Fu-Ji Tsai
IPC分类号： G01N21/55 , H01L31/18
CPC分类号： G01N21/554 , B22F9/04 , B22F2999/00 , G02B5/008 , B22F2202/11
摘要： A method for forming a localized surface plasmon resonance (LSPR) sensor is disclosed, including providing a substrate, forming a metal thin film on the substrate and irradiating the metal thin film with a laser to form a plurality of metal nanoparticles, wherein the metal nanoparticles have a fixed orientation.
摘要翻译：公开了一种形成局部表面等离子体共振（LSPR）传感器的方法，包括提供基板，在基板上形成金属薄膜并用激光照射金属薄膜以形成多个金属纳米颗粒，其中金属纳米颗粒有一个固定的方向。

2. 发明申请

US20100314606A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20100314606A1
公开(公告)日：2010-12-16
申请号：US12544172
申请日：2009-08-19
申请人： Chih-Chung Yang , Yen-Cheng Lu , Kun-Ching Shen , Fu-Ji Tsai , Jyh-Yang Wang , Cheng-Hung Lin , Chih-Feng Lu , Cheng-Yen Chen , Yean-Woei Kiang
发明人： Chih-Chung Yang , Yen-Cheng Lu , Kun-Ching Shen , Fu-Ji Tsai , Jyh-Yang Wang , Cheng-Hung Lin , Chih-Feng Lu , Cheng-Yen Chen , Yean-Woei Kiang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38
摘要： A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.
摘要翻译：公开了一种发光器件，包括具有连接到发光元件的中间层和中间层上的金属结构的发光元件和表面等离子体激元耦合元件，其中中间层在低温下导电，频率注入电流，具有100nm〜20000nm波长范围内的介电材料的特性。

3. 发明申请

US20090114940A1 Light-Emitting Device 审中-公开
标题翻译：发光装置
公开(公告)号：US20090114940A1
公开(公告)日：2009-05-07
申请号：US12055119
申请日：2008-03-25
申请人： Chih-Chung Yang , Dong-Ming Yeh , Cheng-Yen Chen , Yen-Cheng Lu , Kun-Ching Shen , Chi-Feng Huang
发明人： Chih-Chung Yang , Dong-Ming Yeh , Cheng-Yen Chen , Yen-Cheng Lu , Kun-Ching Shen , Chi-Feng Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.
摘要翻译：本发明提供了一种发光装置，包括发光元件和连接到发光元件的表面等离子体激元耦合元件。在本发明的实施例中，表面等离子体激元耦合元件包括连接到发光元件的电介质层和介电层上的金属层。在本发明的另一个实施例中，发光装置是发光二极管，其包括n型半导体层和p型半导体层之间的有源层以及与n型半导体层相邻的表面等离子体耦合元件半导体层。在本发明的另一实施例中，发光器件的第二类型半导体层上的电流扩展层包括多个条形结构，并且表面等离子体激元耦合元件设置在电流扩展层上并被填充到电流扩展层的带状结构之间的间隙。

4. 发明申请

US20080035909A1 Method for controlling color contrast of a multi-wavelength light-emitting diode 失效
标题翻译：用于控制多波长发光二极管的色对比度的方法
公开(公告)号：US20080035909A1
公开(公告)日：2008-02-14
申请号：US11819175
申请日：2007-06-26
申请人： Chih-Feng Lu , Horng-Shyang Chen , Dong-Ming Yeh , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
发明人： Chih-Feng Lu , Horng-Shyang Chen , Dong-Ming Yeh , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
IPC分类号： H01L31/024 , H01L21/22 , H01L21/302
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
摘要翻译：公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此控制由LED发射的多个波长的相对强度比。通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

5. 发明授权

US07875478B2 Method for controlling color contrast of a multi-wavelength light-emitting diode 失效
标题翻译：用于控制多波长发光二极管的色对比度的方法
公开(公告)号：US07875478B2
公开(公告)日：2011-01-25
申请号：US11819175
申请日：2007-06-26
申请人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
发明人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
摘要翻译：公开了一种用于控制根据本发明制造的多波长发光二极管（LED）的颜色对比度的方法。本发明至少包括提高多量子阱LED的结温的步骤，使得空穴分布在LED的较深量子阱层中以增加较深量子阱层的发光强度，由此控制由LED发射的多个波长的相对强度比。通过调节LED的p型电极层的厚度或通过改变台面面积尺寸来控制其相对的热辐射表面积来实现增加多量子阱LED的结温的步骤。

6. 发明申请

US20080157056A1 Manufacturing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device therefor 审中-公开
标题翻译：利用纳米晶体的多波长发光二极管的制造方法及其发光装置
公开(公告)号：US20080157056A1
公开(公告)日：2008-07-03
申请号：US11819169
申请日：2007-06-26
申请人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Wen-Yu Shiao , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang
发明人： Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Wen-Yu Shiao , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L33/08 , H01L33/16
摘要： A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.
摘要翻译：利用纳米晶体的多波长发光二极管的制造方法及其发光装置包括：通过堆叠至少两种量子阱的混合物来生长和处理多量子阱层，以产生双波长发光二极管。然后，将纳米晶体附着在双波长发光二极管上，以传输双波长发光二极管的波长之一，以产生多波长发光二极管。本发明的装置可以发出蓝色，绿色和红色的光以产生白光。

7. 发明授权

US08841047B2 Extreme ultraviolet lithography process and mask 有权
标题翻译：极紫外光刻工艺和面膜
公开(公告)号：US08841047B2
公开(公告)日：2014-09-23
申请号：US13437099
申请日：2012-04-02
申请人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
发明人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/48 , G03F1/58 , G03F7/7015 , G03F7/70191
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由具有部分相干性的几乎轴向照明（ONI）暴露; 小于0.3以产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

8. 发明申请

US20140038090A1 Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same 有权
标题翻译：极紫外光刻面和多层沉积方法制作相同
公开(公告)号：US20140038090A1
公开(公告)日：2014-02-06
申请号：US13567900
申请日：2012-08-06
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/24 , G03F1/52
摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
摘要翻译：公开了一种掩模，其制造方法及其使用方法。在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

9. 发明授权

US08628897B1 Extreme ultraviolet lithography process and mask 有权
标题翻译：极紫外光刻工艺和面膜
公开(公告)号：US08628897B1
公开(公告)日：2014-01-14
申请号：US13542458
申请日：2012-07-05
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/24
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

10. 发明申请

US20140011120A1 EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
标题翻译：极致超紫外线光刻工艺和掩模
公开(公告)号：US20140011120A1
公开(公告)日：2014-01-09
申请号：US13542458
申请日：2012-07-05
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/24
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

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