会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明申请
    • Systems and Methods for Lithography Masks
    • 光刻面具的系统和方法
    • US20130323625A1
    • 2013-12-05
    • US13486015
    • 2012-06-01
    • Chih-Chiang TuHsin-Chang LeeJong-Yuh ChangChia-Jen ChenChun-Lang Chen
    • Chih-Chiang TuHsin-Chang LeeJong-Yuh ChangChia-Jen ChenChun-Lang Chen
    • G03F1/00G03F1/26G03F1/36G03F1/50
    • G03F1/36G03F1/50G03F1/58G03F1/80
    • Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.
    • 公开了掩模毛坯和掩模的结构,以及制造掩模的方法。 当过程经过蚀刻步骤三次时,新的掩模坯料和掩模包括三层蚀刻停止层,以防止损坏石英基板。 三重蚀刻停止层可以包括含有氮(TaN)的钽的第一子层,含有氧(TaO)的钽的第二子层和TaN的第三子层。 或者,三重蚀刻停止层可以包括SiON材料的第一子层,TaO材料的第二子层和SiON材料的第三子层。 另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料,当该工艺经过蚀刻步骤三次时,其可以防止对石英衬底的损坏。 通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。