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1. 发明申请

US20120329271A1 DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATION 审中-公开
标题翻译：不连续/非均匀金属盖结构和互连整合的过程
公开(公告)号：US20120329271A1
公开(公告)日：2012-12-27
申请号：US13600773
申请日：2012-08-31
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
摘要翻译：提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。

2. 发明授权

US08889546B2 Discontinuous/non-uniform metal cap structure and process for interconnect integration 有权
标题翻译：不连续/不均匀的金属帽结构和互连整合的过程
公开(公告)号：US08889546B2
公开(公告)日：2014-11-18
申请号：US13600773
申请日：2012-08-31
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L21/4763 , H01L23/532 , H01L23/528 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
摘要翻译：提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。

3. 发明授权

US08823176B2 Discontinuous/non-uniform metal cap structure and process for interconnect integration 有权
标题翻译：不连续/不均匀的金属帽结构和互连整合的过程
公开(公告)号：US08823176B2
公开(公告)日：2014-09-02
申请号：US12247632
申请日：2008-10-08
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L29/40 , H01L23/532 , H01L21/768 , H01L21/02
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.
摘要翻译：提供一种互连结构，其包括至少存在于嵌入在互连电介质材料中的至少一种导电材料的上表面的至少一部分上的含贵金属的盖。在一个实施方案中，含贵金属的帽是不连续的，例如以至少一种导电材料的表面上的核或岛状存在。在另一个实施方案中，含贵金属的盖在至少一种导电材料的表面上具有不均匀的厚度。

4. 发明申请

US20100084767A1 DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATION 有权
标题翻译：不连续/非均匀金属盖结构和互连整合的过程
公开(公告)号：US20100084767A1
公开(公告)日：2010-04-08
申请号：US12247632
申请日：2008-10-08
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.
摘要翻译：提供一种互连结构，其包括至少存在于嵌入在互连电介质材料中的至少一种导电材料的上表面的至少一部分上的含贵金属的盖。在一个实施方案中，含贵金属的帽是不连续的，例如以至少一种导电材料的表面上的核或岛状存在。在另一个实施方案中，含贵金属的盖在至少一种导电材料的表面上具有不均匀的厚度。

5. 发明申请

US20090278229A1 EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
标题翻译：电气保险丝应用的有效互连结构
公开(公告)号：US20090278229A1
公开(公告)日：2009-11-12
申请号：US12119125
申请日：2008-05-12
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

6. 发明授权

US07893520B2 Efficient interconnect structure for electrical fuse applications 有权
标题翻译：电熔丝应用的高效互连结构
公开(公告)号：US07893520B2
公开(公告)日：2011-02-22
申请号：US12119125
申请日：2008-05-12
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L29/00
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

7. 发明申请

US20110092031A1 EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
标题翻译：电气保险丝应用的有效互连结构
公开(公告)号：US20110092031A1
公开(公告)日：2011-04-21
申请号：US12976445
申请日：2010-12-22
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L21/283
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

8. 发明授权

US08133767B2 Efficient interconnect structure for electrical fuse applications 有权
标题翻译：电熔丝应用的高效互连结构
公开(公告)号：US08133767B2
公开(公告)日：2012-03-13
申请号：US12976445
申请日：2010-12-22
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L21/82
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

9. 发明授权

US08679970B2 Structure and process for conductive contact integration 有权
标题翻译：导电触点集成的结构和工艺
公开(公告)号：US08679970B2
公开(公告)日：2014-03-25
申请号：US12124698
申请日：2008-05-21
申请人： Chih-Chao Yang , Lynne M. Gignac
发明人： Chih-Chao Yang , Lynne M. Gignac
IPC分类号： H01L23/48 , H01L21/02 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.
摘要翻译：提供了一种半导体结构，其包括消除了键孔形成的高可靠性高纵横比接触结构。在本发明中通过在存在于电介质材料中的高纵横比接触开口内提供致密的含贵金属衬里来消除键孔缝形成。致密化的含贵金属的衬里位于扩散阻挡层的顶部，并且这两个元件将本发明接触结构的导电材料与下面的半导体结构的导电材料分开。通过沉积具有第一电阻率的含贵金属的材料形成本发明的含致密化的含贵金属的衬里，并使沉积的含贵金属的材料经受降低电阻率的致密化处理（热或等离子体）的沉积的含贵金属材料的电阻率较低。

10. 发明申请

US20090289365A1 STRUCTURE AND PROCESS FOR CONDUCTIVE CONTACT INTEGRATION 有权
标题翻译：导电接触集成的结构与工艺
公开(公告)号：US20090289365A1
公开(公告)日：2009-11-26
申请号：US12124698
申请日：2008-05-21
申请人： Chih-Chao Yang , Lynne M. Gignac
发明人： Chih-Chao Yang , Lynne M. Gignac
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.
摘要翻译：提供了一种半导体结构，其包括消除了键孔形成的高可靠性高纵横比接触结构。在本发明中通过在存在于电介质材料中的高纵横比接触开口内提供致密的含贵金属衬里来消除键孔缝形成。致密化的含贵金属的衬里位于扩散阻挡层的顶部，并且这两个元件将本发明接触结构的导电材料与下面的半导体结构的导电材料分开。通过沉积具有第一电阻率的含贵金属的材料形成本发明的含致密化的含贵金属的衬里，并使沉积的含贵金属的材料经受降低电阻率的致密化处理（热或等离子体）的沉积的含贵金属材料的电阻率较低。

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